Dual Use Codes

EU REGULATION 2021/821 Annex I and IV

Category 0 - NUCLEAR MATERIALS, FACILITIES AND EQUIPMENT

0A Systems, Equipment and Components

0A001 "Nuclear reactors" and specially designed or prepared equipment and components therefor, as follows:

"Nuclear reactors";

Metal vessels, or major shop-fabricated parts therefor, including the reactor vessel head for a reactor pressure vessel, specially designed or prepared to contain the core of a "nuclear reactor";

Manipulative equipment specially designed or prepared for inserting or removing fuel in a "nuclear reactor";

Control rods specially designed or prepared for the control of the fission process in a "nuclear reactor", support or suspension structures therefor, rod drive mechanisms and rod guide tubes;

Pressure tubes specially designed or prepared to contain both fuel elements and the primary coolant in a "nuclear reactor";

Zirconium metal tubes or zirconium alloy tubes (or assembles of tubes) specially designed or prepared for use as fuel cladding in a "nuclear reactor", and in quantities exceeding 10 kg;

N.B. For zirconium pressure tubes see 0A001.e. and for calandria tubes see 0A001.h.

Coolant pumps or circulators specially designed or prepared for circulating the primary coolant of "nuclear reactors";

‘Nuclear reactor internals’ specially designed or prepared for use in a "nuclear reactor", including support columns for the core, fuel channels, calandria tubes, thermal shields, baffles, core grid plates, and diffuser plates;

Technical Note:

In 0A001.h. ‘nuclear reactor internals’ means any major structure within a reactor vessel which has one or more functions such as supporting the core, maintaining fuel alignment, directing primary coolant flow, providing radiation shields for the reactor vessel, and guiding in-core instrumentation.

Heat exchangers as follows:

Steam generators specially designed or prepared for the primary, or intermediate, coolant circuit of a "nuclear reactor";

Other heat exchangers specially designed or prepared for use in the primary coolant circuit of a "nuclear reactor";

Note: 0A001.i. does not control heat exchangers for the supporting systems of the reactor, e.g., the emergency cooling system or the decay heat cooling system.

Neutron detectors specially designed or prepared for determining neutron flux levels within the core of a "nuclear reactor";

‘External thermal shields’ specially designed or prepared for use in a "nuclear reactor" for the reduction of heat loss and also for the containment vessel protection.

Technical Note:

In 0A001.k. ‘external thermal shields’ means major structures placed over the reactor vessel which reduce heat loss from the reactor and reduce temperature within the containment vessel.

0B Test, Inspection and Production Equipment

0B001 Plant for the separation of isotopes of "natural uranium", "depleted uranium" or "special fissile materials", and specially designed or prepared equipment and components therefor, as follows:

Plant specially designed for separating isotopes of "natural uranium", "depleted uranium", or "special fissile materials", as follows:

Gas centrifuge separation plant;

Gaseous diffusion separation plant;

Aerodynamic separation plant;

Chemical exchange separation plant;

Ion-exchange separation plant;

Atomic vapour "laser" isotope separation plant;

Molecular "laser" isotope separation plant;

Plasma separation plant;

Electro magnetic separation plant;

Gas centrifuges and assemblies and components, specially designed or prepared for gas centrifuge separation process, as follows:

Technical Note:

In 0B001.b. ‘high strength-to-density ratio material’ means any of the following:

1. Maraging steel capable of an ultimate tensile strength of 1,95 GPa or more;

2. Aluminium alloys capable of an ultimate tensile strength of 0,46 GPa or more; or

3. "Fibrous or filamentary materials" with a "specific modulus" of more than 3,18 × 10⁶m and a "specific tensile strength" greater than 7,62 × 10⁴ m;

Gas centrifuges;

Complete rotor assemblies;

Rotor tube cylinders with a wall thickness of 12 mm or less, a diameter of between 75 mm and 650 mm, made from ‘high strength-to-density ratio materials’;

Rings or bellows with a wall thickness of 3 mm or less and a diameter of between 75 mm and 650 mm and designed to give local support to a rotor tube or to join a number together, made from ‘high strength-to-density ratio materials’;

Baffles of between 75 mm and 650 mm diameter for mounting inside a rotor tube, made from ‘high strength-to-density ratio materials’;

Top or bottom caps of between 75 mm and 650 mm diameter to fit the ends of a rotor tube, made from ‘high strength-to-density ratio materials’;

Magnetic suspension bearings as follows:

a. Bearing assemblies consisting of an annular magnet suspended within a housing made of or protected by "materials resistant to corrosion by UF₆" containing a damping medium and having the magnet coupling with a pole piece or second magnet fitted to the top cap of the rotor;

b. Active magnetic bearings specially designed or prepared for use with gas centrifuges;

Specially prepared bearings comprising a pivot-cup assembly mounted on a damper;

Molecular pumps comprised of cylinders having internally machined or extruded helical grooves and internally machined bores;

10.

Ring-shaped motor stators for multiphase AC hysteresis (or reluctance) motors for synchronous operation within a vacuum at a frequency of 600 Hz or more and a power of 40 VA or more;

11.

Centrifuge housing/recipients to contain the rotor tube assembly of a gas centrifuge, consisting of a rigid cylinder of wall thickness up to 30 mm with precision machined ends that are parallel to each other and perpendicular to the cylinder’s longitudinal axis to within 0,05° or less;

12.

Scoops consisting of specially designed or prepared tubes for the extraction of UF₆ gas from within the rotor tube by a Pitot tube action and capable of being fixed to the central gas extraction system;

13.

Frequency changers (converters or inverters) specially designed or prepared to supply motor stators for gas centrifuge enrichment, having all of the following characteristics, and specially designed components therefor:

a. A multiphase frequency output of 600 Hz or greater; and

b. High stability (with frequency control better than 0,2 %);

14.

Shut-off and control valves as follows:

a. Shut-off valves specially designed or prepared to act on the feed, product or tails UF₆ gaseous streams of an individual gas centrifuge;

b. Bellows-sealed valves, shut-off or control, made of or protected by "materials resistant to corrosion by UF₆", with an inside diameter of 10 mm to 160 mm, specially designed or prepared for use in main or auxiliary systems of gas centrifuge enrichment plants;

Equipment and components, specially designed or prepared for gaseous diffusion separation process, as follows:

Gaseous diffusion barriers made of porous metallic, polymer or ceramic "materials resistant to corrosion by UF₆" with a pore size of 10 to 100 nm, a thickness of 5 mm or less, and, for tubular forms, a diameter of 25 mm or less;

Gaseous diffuser housings made of or protected by "materials resistant to corrosion by UF₆";

Compressors or gas blowers with a suction volume capacity of 1 m³/min or more of UF₆, with a discharge pressure up to 500 kPa, and having a pressure ratio of 10:1 or less, and made of or protected by "materials resistant to corrosion by UF₆";

Rotary shaft seals for compressors or blowers specified in 0B001.c.3. and designed for a buffer gas in-leakage rate of less than 1 000 cm³/min.;

Heat exchangers made of or protected by "materials resistant to corrosion by UF₆", and designed for a leakage pressure rate of less than 10 Pa per hour under a pressure differential of 100 kPa;

Bellows-sealed valves, manual or automated, shut-off or control, made of or protected by "materials resistant to corrosion by UF₆";

Equipment and components, specially designed or prepared for aerodynamic separation process, as follows:

Separation nozzles consisting of slit-shaped, curved channels having a radius of curvature less than 1 mm, resistant to corrosion by UF₆, and having a knife-edge contained within the nozzle which separates the gas flowing through the nozzle into two streams;

Cylindrical or conical tubes, (vortex tubes), made of or protected by "materials resistant to corrosion by UF₆" and with one or more tangential inlets;

Compressors or gas blowers made of or protected by "materials resistant to corrosion by UF₆", and rotary shaft seals therefor;

Heat exchangers made of or protected by "materials resistant to corrosion by UF₆";

Separation element housings, made of or protected by "materials resistant to corrosion by UF₆" to contain vortex tubes or separation nozzles;

Bellows-sealed valves, manual or automated, shut-off or control, made of or protected by "materials resistant to corrosion by UF₆", with a diameter of 40 mm or more;

Process systems for separating UF₆ from carrier gas (hydrogen or helium) to 1 ppm UF₆ content or less, including:

a. Cryogenic heat exchangers and cryoseparators capable of temperatures of 153K (–120 °C) or less;

b. Cryogenic refrigeration units capable of temperatures of 153 K (–120 °C) or less;

c. Separation nozzle or vortex tube units for the separation of UF₆ from carrier gas;

d. UF₆ cold traps capable of freezing out UF₆;

Equipment and components, specially designed or prepared for chemical exchange separation process, as follows:

Fast-exchange liquid-liquid pulse columns with stage residence time of 30 s or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorinated hydrocarbon polymers or glass);

Fast-exchange liquid-liquid centrifugal contactors with stage residence time of 30 s or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorinated hydrocarbon polymers or glass);

Electrochemical reduction cells resistant to concentrated hydrochloric acid solutions, for reduction of uranium from one valence state to another;

Electrochemical reduction cells feed equipment to take U⁺⁴ from the organic stream and, for those parts in contact with the process stream, made of or protected by suitable materials (e.g. glass, fluorocarbon polymers, polyphenyl sulphate, polyether sulfone and resin-impregnated graphite);

Feed preparation systems for producing high purity uranium chloride solution consisting of dissolution, solvent extraction and/or ion exchange equipment for purification and electrolytic cells for reducing the uranium U⁺⁶ or U⁺⁴ to U⁺³;

Uranium oxidation systems for oxidation of U⁺³ to U⁺⁴;

Equipment and components, specially designed or prepared for ion-exchange separation process, as follows:

Fast reacting ion-exchange resins, pellicular or porous macro-reticulated resins in which the active chemical exchange groups are limited to a coating on the surface of an inactive porous support structure, and other composite structures in any suitable form, including particles or fibres, with diameters of 0,2 mm or less, resistant to concentrated hydrochloric acid and designed to have an exchange rate half-time of less than 10 s and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C);

Ion exchange columns (cylindrical) with a diameter greater than 1 000 mm, made of or protected by materials resistant to concentrated hydrochloric acid (e.g. titanium or fluorocarbon plastics) and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C) and pressures above 0,7 MPa;

Ion exchange reflux systems (chemical or electrochemical oxidation or reduction systems) for regeneration of the chemical reducing or oxidizing agents used in ion exchange enrichment cascades;

Equipment and components, specially designed or prepared for laser-based separation processes using atomic vapour laser isotope separation, as follows:

Uranium metal vaporization systems designed to achieve a delivered power of 1 kW or more on the target for use in laser enrichment;

Liquid or vapour uranium metal handling systems specially designed or prepared for handling molten uranium, molten uranium alloys or uranium metal vapour for use in laser enrichment, and specially designed components therefor;

N.B. SEE ALSO 2A225.

Product and tails collector assemblies for collecting uranium metal in liquid or solid form, made of or protected by materials resistant to the heat and corrosion of uranium metal vapour or liquid, such as yttria-coated graphite or tantalum;

Separator module housings (cylindrical or rectangular vessels) for containing the uranium metal vapour source, the electron beam gun and the product and tails collectors;

"Lasers" or "laser" systems specially designed or prepared for the separation of uranium isotopes with a spectrum frequency stabilisation for operation over extended periods of time;

N.B. SEE ALSO 6A005 AND 6A205.

Equipment and components, specially designed or prepared for laser-based separation processes using molecular laser isotope separation, as follows:

Supersonic expansion nozzles for cooling mixtures of UF₆ and carrier gas to 150 K (–123 °C) or less and made from "materials resistant to corrosion by UF₆";

Product or tails collector components or devices specially designed or prepared for collecting uranium material or uranium tails material following illumination with laser light, made of "materials resistant to corrosion by UF₆";

Compressors made of or protected by "materials resistant to corrosion by UF₆", and rotary shaft seals therefor;

Equipment for fluorinating UF₅ (solid) to UF₆ (gas);

Process systems for separating UF₆ from carrier gas (e.g. nitrogen, argon or other gas) including:

a. Cryogenic heat exchangers and cryoseparators capable of temperatures of 153 K (–120 °C) or less;

b. Cryogenic refrigeration units capable of temperatures of 153 K (–120 °C) or less;

c. UF₆ cold traps capable of freezing out UF₆;

"Lasers" or "laser" systems specially designed or prepared for the separation of uranium isotopes with a spectrum frequency stabilisation for operation over extended periods of time;

N.B. SEE ALSO 6A005 AND 6A205.

Equipment and components, specially designed or prepared for plasma separation process, as follows:

Microwave power sources and antennae for producing or accelerating ions, with an output frequency greater than 30 GHz and mean power output greater than 50 kW;

Radio frequency ion excitation coils for frequencies of more than 100 kHz and capable of handling more than 40 kW mean power;

Uranium plasma generation systems;

Not used;

Product and tails collector assemblies for uranium metal in solid form, made of or protected by materials resistant to the heat and corrosion of uranium vapour such as yttria-coated graphite or tantalum;

Separator module housings (cylindrical) for containing the uranium plasma source, radio-frequency drive coil and the product and tails collectors and made of a suitable non-magnetic material (e.g. stainless steel);

Equipment and components, specially designed or prepared for electromagnetic separation process, as follows:

Ion sources, single or multiple, consisting of a vapour source, ioniser, and beam accelerator made of suitable non-magnetic materials (e.g. graphite, stainless steel, or copper) and capable of providing a total ion beam current of 50 mA or greater;

Ion collector plates for collection of enriched or depleted uranium ion beams, consisting of two or more slits and pockets and made of suitable non-magnetic materials (e.g. graphite or stainless steel);

Vacuum housings for uranium electromagnetic separators made of non-magnetic materials (e.g. stainless steel) and designed to operate at pressures of 0,1 Pa or lower;

Magnet pole pieces with a diameter greater than 2 m;

High voltage power supplies for ion sources, having all of the following characteristics:

a. Capable of continuous operation;

b. Output voltage of 20 000 V or greater;

c. Output current of 1 A or greater; and

d. Voltage regulation of better than 0,01 % over a period of 8 hours;

N.B. SEE ALSO 3A227.

Magnet power supplies (high power, direct current) having all of the following characteristics:

a. Capable of continuous operation with a current output of 500 A or greater at a voltage of 100 V or greater; and

b. Current or voltage regulation better than 0,01 % over a period of 8 hours.

N.B. SEE ALSO 3A226.

0B002 Specially designed or prepared auxiliary systems, equipment and components as follows, for isotope separation plant specified in 0B001, made of or protected by "materials resistant to corrosion by UF₆":

Feed autoclaves, ovens or systems used for passing UF₆ to the enrichment process;

Desublimers or cold traps, used to remove UF₆ from the enrichment process for subsequn heating;

Product and tails stations for transferring UF₆ into containers;

Liquefaction or solidification stations used to remove UF₆ from the enrichment process by compressing, cooling and converting UF₆ to a liquid or solid form;

Piping systems and header systems specially designed or prepared for handling UF₆ within gaseous diffusion, centrifuge or aerodynamic cascades;

Vacuum systems and pumps as follows:

Vacuum manifolds, vacuum headers or vacuum pumps having a suction capacity of 5 m³/minute or more;

Vacuum pumps specially designed for use in UF₆ bearing atmospheres made of, or protected by, "materials resistant to corrosion by UF₆"; or

Vacuum systems consisting of vacuum manifolds, vacuum headers and vacuum pumps, and designed for service in UF₆-bearing atmospheres;

UF₆ mass spectrometers/ion sources capable of taking on-line samples from UF₆ gas streams and having all of the following characteristics:

Capable of measuring ions of 320 atomic mass units or greater and having a resolution of better than 1 part in 320;

Ion sources constructed of or protected by nickel, nickel-copper alloys with a nickel content of 60 % or more by weight, or nickel-chrome alloys;

Electron bombardment ionisation sources; and

Having a collector system suitable for isotopic analysis.

0B003 Plant for the conversion of uranium and equipment specially designed or prepared therefor, as follows:

Systems for the conversion of uranium ore concentrates to UO₃;

Systems for the conversion of UO₃ to UF₆;

Systems for the conversion of UO₃ to UO₂;

Systems for the conversion of UO₂ to UF₄;

Systems for the conversion of UF₄ to UF₆;

Systems for the conversion of UF₄ to uranium metal;

Systems for the conversion of UF₆ to UO₂;

Systems for the conversion of UF₆ to UF₄;

Systems for the conversion of UO₂ to UCl₄.

0B004 Plant for the production or concentration of heavy water, deuterium and deuterium compounds and specially designed or prepared equipment and components therefor, as follows:

Plant for the production of heavy water, deuterium or deuterium compounds, as follows:

Water-hydrogen sulphide exchange plants;

Ammonia-hydrogen exchange plants;

Equipment and components, as follows:

Water-hydrogen sulphide exchange towers with diameters of 1,5 m or more, capable of operating at pressures greater than or equal to 2 MPa;

Single stage, low head (i.e., 0,2 MPa) centrifugal blowers or compressors for hydrogen sulphide gas circulation (i.e., gas containing more than 70 % by weight hydrogen sulphide, H₂S) with a throughput capacity greater than or equal to 56 m³/s when operating at pressures greater than or equal to 1,8 MPa suction and having seals designed for wet H₂S service;

Ammonia-hydrogen exchange towers greater than or equal to 35 m in height with diameters of 1,5 m to 2,5 m capable of operating at pressures greater than 15 MPa;

Tower internals, including stage contactors, and stage pumps, including those which are submersible, for heavy water production utilising the ammonia-hydrogen exchange process;

Ammonia crackers with operating pressures greater than or equal to 3 MPa for heavy water production utilising the ammonia-hydrogen exchange process;

Infrared absorption analysers capable of on-line hydrogen/deuterium ratio analysis where deuterium concentrations are equal to or greater than 90 % by weight;

Catalytic burners for the conversion of enriched deuterium gas into heavy water utilising the ammonia-hydrogen exchange process;

Complete heavy water upgrade systems, or columns therefor, for the upgrade of heavy water to reactor-grade deuterium concentration;

Ammonia synthesis converters or synthesis units specially designed or prepared for heavy water production utilising the ammonia-hydrogen exchange process.

0B005 Plant specially designed for the fabrication of "nuclear reactor" fuel elements and specially designed or prepared equipment therefor.

Technical Note:

Specially designed or prepared equipment for the fabrication of "nuclear reactor" fuel elements includes equipment which:

1. Normally comes into direct contact with or directly processes or controls the production flow of nuclear materials;

2. Seals the nuclear materials within the cladding;

3. Checks the integrity of the cladding or the seal;

4. Checks the finish treatment of the sealed fuel; or

5. Is used for assembling reactor elements.

0B006 Plant for the reprocessing of irradiated "nuclear reactor" fuel elements, and specially designed or prepared equipment and components therefor.

0B006 includes:

Plant for the reprocessing of irradiated "nuclear reactor" fuel elements including equipment and components which normally come into direct contact with and directly control the irradiated fuel and the major nuclear material and fission product processing streams;

Fuel element decladding equipment and chopping or shredding machines, i.e., remotely operated equipment to cut, chop or shear irradiated "nuclear reactor" fuel assemblies, bundles or rods;

Dissolver vessels or dissolvers employing mechanical devices specially designed or prepared for the dissolution of irradiated "nuclear reactor" fuel, which are capable of withstanding hot, highly corrosive liquids, and which can be remotely loaded, operated and maintained;

Solvent extractors, such as packed or pulsed columns, mixer settlers or centrifugal contractors, resistant to the corrosive effects of nitric acid and specially designed or prepared for use in a plant for the reprocessing of irradiated "natural uranium", "depleted uranium" or "special fissile materials";

Holding or storage vessels specially designed to be critically safe and resistant to the corrosive effects of nitric acid;

Technical Note:

Holding or storage vessels may have the following features:

1. Walls or internal structures with a boron equivalent (calculated for all constituent elements as defined in the note to 0C004) of at least two per cent;

2. A maximum diameter of 175 mm for cylindrical vessels; or

3. A maximum width of 75 mm for either a slab or annular vessel.

Neutron measurement systems specially designed or prepared for integration and use with automated process control systems in a plant for the reprocessing of irradiated "natural uranium", "depleted uranium" or "special fissile materials".

0B007 Plant for the conversion of plutonium and equipment specially designed or prepared therefor, as follows:

Systems for the conversion of plutonium nitrate to oxide;

Systems for plutonium metal production.

0C Materials

0C001 "Natural uranium" or "depleted uranium" or thorium in the form of metal, alloy, chemical compound or concentrate and any other material containing one or more of the foregoing;

Note: 0C001 does not control the following:

a. Four grammes or less of "natural uranium" or "depleted uranium" when contained in a sensing component in instruments;

b. "Depleted uranium" specially fabricated for the following civil non-nuclear applications:

1. Shielding;

2. Packaging;

3. Ballasts having a mass not greater than 100 kg;

4. Counter-weights having a mass not greater than 100 kg;

c. Alloys containing less than 5 % thorium;

d. Ceramic products containing thorium, which have been manufactured for non-nuclear use.

0C002 "Special fissile materials"

Note: 0C002 does not control four "effective grammes" or less when contained in a sensing component in instruments.

0C003 Deuterium, heavy water (deuterium oxide) and other compounds of deuterium, and mixtures and solutions containing deuterium, in which the isotopic ratio of deuterium to hydrogen exceeds 1:5 000 .

0C004 Graphite having a purity level better than 5 parts per million ‘boron equivalent’ and with a density greater than 1,50 g/cm³ for use in a "nuclear reactor", in quantities exceeding 1 kg.

N.B. SEE ALSO 1C107.

Note 1: For the purpose of export control, the competent authorities of the EU Member State in which the exporter is established will determine whether or not the exports of graphite meeting the above specifications are for "nuclear reactor" use. 0C004 does not control graphite having a purity level better than 5 ppm (parts per million) boron equivalent and with a density greater than 1,50 g/cm³ not for use in a "nuclear reactor".

Note 2: In 0C004, ‘boron equivalent’ (BE) is defined as the sum of BEz for impurities (excluding BEcarbon since carbon is not considered an impurity) including boron, where:

BEZ (ppm) = CF × concentration of element Z in ppm;

and σΒ and σΖ are the thermal neutron capture cross sections (in barns) for naturally occurring boron and element Z respectively; and AB and AZ are the atomic masses of naturally occurring boron and element Z respectively.

0C005 Specially prepared compounds or powders for the manufacture of gaseous diffusion barriers, resistant to corrosion by UF₆ (e.g. nickel or alloys containing 60 % by weight or more nickel, aluminium oxide and fully fluorinated hydrocarbon polymers), having a purity of 99,9 % by weight or more and a particle size less than 10 μm measured by ASTM B330 standard and a high degree of particle size uniformity.

0D Software

0D001 "Software" specially designed or modified for the "development", "production" or "use" of goods specified in this Category.

0E Technology

0E001 "Technology" according to the Nuclear Technology Note for the "development", "production" or "use" of goods specified in this Category.

Category 1 - SPECIAL MATERIALS AND RELATED EQUIPMENT

1A Systems, Equipment and Components

1A001 Components made from fluorinated compounds, as follows:

Seals, gaskets, sealants or fuel bladders, specially designed for "aircraft" or aerospace use, made from more than 50 % by weight of any of the materials specified in 1C009.b. or 1C009.c.;

Not used;

1A002 "Composite" structures or laminates, as follows:

N.B. SEE ALSO 1A202, 9A010 and 9A110.

Made from any of the following:

An organic "matrix" and "fibrous or filamentary materials" specified in 1C010.c. or 1C010.d.: or

Prepregs or preforms specified in 1C010.e.;

Made from a metal or carbon "matrix", and any of the following:

Carbon "fibrous or filamentary materials" having all of the following:

a. A "specific modulus" exceeding 10,15 × 10⁶ m; and

b. A "specific tensile strength" exceeding 17,7 × 10⁴ m; or

Materials specified in 1C010.c.

Note 1: 1A002 does not control "composite" structures or laminates made from epoxy resin impregnated carbon "fibrous or filamentary materials" for the repair of "civil aircraft" structures or laminates, having all of the following:

a. An area not exceeding 1 m²;

b. A length not exceeding 2,5 m; and

c. A width exceeding 15 mm.

Note 2: 1A002 does not control semi-finished items, specially designed for purely civilian applications as follows:

a. Sporting goods;

b. Automotive industry;

c. Machine tool industry;

d. Medical applications.

Note 3: 1A002.b.1. does not control semi-finished items containing a maximum of two dimensions of interwoven filaments and specially designed for applications as follows:

a. Metal heat-treatment furnaces for tempering metals;

b. Silicon boule production equipment.

Note 4: 1A002 does not control finished items specially designed for a specific application.

Note 5: 1A002.b.1. does not control mechanically chopped, milled, or cut carbon "fibrous or filamentary materials" 25,0 mm or less in length.

1A003 Manufactures of non-"fusible" aromatic polyimides in film, sheet, tape or ribbon form having any of the following:

A thickness exceeding 0,254 mm; or

Coated or laminated with carbon, graphite, metals or magnetic substances.

Note: 1A003 does not control manufactures when coated or laminated with copper and designed for the production of electronic printed circuit boards.

N.B. For "fusible" aromatic polyimides in any form, see 1C008.a.3.

1A004 Protective and detection equipment and components not specially designed for military use, as follows:

N.B. SEE ALSO MILITARY GOODS CONTROLS, 2B351 AND 2B352.

Full face masks, filter canisters and decontamination equipment therefor, designed or modified for defence against any of the following, and specially designed components therefor:

Note: 1A004.a. includes Powered Air Purifying Respirators (PAPR) that are designed or modified for defence against agents or materials, listed in 1A004.a.

Technical Note:

For the purposes of 1A004.a.:

1. Full face masks are also known as gas masks.

2. Filter canisters include filter cartridges.

"Biological agents";

‘Radioactive materials’;

Chemical warfare (CW) agents; or

"Riot control agents", including:

a. α-Bromobenzeneacetonitrile, (Bromobenzyl cyanide) (CA) (CAS 5798-79-8);

b. [(2-Chlorophenyl) methylene] propanedinitrile, (o-Chlorobenzylidenemalononitrile) (CS) (CAS 2698-41-1);

c. 2-Chloro-1-phenylethanone, Phenylacyl chloride (ω-chloroacetophenone) (CN) (CAS 532-27-4);

d. Dibenz-(b,f)-1,4-oxazephine (CR) (CAS 257-07-8);

e. 10-Chloro-5,10-dihydrophenarsazine, (Phenarsazine chloride), (Adamsite), (DM) (CAS 578-94-9);

f. N-Nonanoylmorpholine, (MPA) (CAS 5299-64-9);

Protective suits, gloves and shoes, specially designed or modified for defence against any of the following:

"Biological agents";

‘Radioactive materials’; or

Chemical warfare (CW) agents;

Detection systems, specially designed or modified for detection or identification of any of the following, and specially designed components therefor:

"Biological agents";

‘Radioactive materials’; or

Chemical warfare (CW) agents.

Electronic equipment designed for automatically detecting or identifying the presence of "explosives" residues and utilising ‘trace detection’ techniques (e.g., surface acoustic wave, ion mobility spectrometry, differential mobility spectrometry, mass spectrometry).

Technical Note:

‘Trace detection’ is defined as the capability to detect less than 1 ppm vapour, or 1 mg solid or liquid.

Note 1: 1A004.d. does not control equipment specially designed for laboratory use.

Note 2: 1A004.d. does not control non-contact walk-through security portals.

Note: 1A004 does not control:

a. Personal radiation monitoring dosimeters;

b. Occupational health or safety equipment limited by design or function to protect against hazards specific to residential safety or civil industries, including:

1. mining;

2. quarrying;

3. agriculture;

4. pharmaceutical;

5. medical;

6. veterinary;

7. environmental;

8. waste management;

9. food industry.

Technical Notes:

1. 1A004 includes equipment and components that have been identified, successfully tested to national standards or otherwise proven effective, for the detection of or defence against ‘radioactive materials’, "biological agents", chemical warfare agents, ‘simulants’ or "riot control agents", even if such equipment or components are used in civil industries such as mining, quarrying, agriculture, pharmaceuticals, medical, veterinary, environmental, waste management, or the food industry.

2. ‘Simulant’ is a substance or material that is used in place of toxic agent (chemical or biological) in training, research, testing or evaluation.

3. For the purposes of 1A004, ‘radioactive materials’ are those selected or modified to increase their effectiveness in producing casualties in humans or animals, degrading equipment or damaging crops or the environment.

1A005 Body armour and components therefor, as follows:

N.B. SEE ALSO MILITARY GOODS CONTROLS.

Soft body armour not manufactured to military standards or specifications, or to their equivalents, and specially designed components therefor;

Hard body armour plates providing ballistic protection equal to or less than level IIIA (NIJ 0101 .06, July 2008), or "equivalent standards".

N.B. For "fibrous or filamentary materials" used in the manufacture of body armour, see 1C010.

Note 1: 1A005 does not control body armour when accompanying its user for the user's own personal protection.

Note 2: 1A005 does not control body armour designed to provide frontal protection only from both fragment and blast from non-military explosive devices.

Note 3: 1A005 does not control body armour designed to provide protection only from knife, spike, needle or blunt trauma.

1A006 Equipment, specially designed or modified for the disposal of Improvised Explosive Devices (IEDs), as follows, and specially designed components and accessories therefor:

N.B. SEE ALSO MILITARY GOODS CONTROLS.

Remotely operated vehicles;

‘Disruptors’.

Technical Note:

For the purposes of 1A006.b. ‘disruptors’ are devices specially designed for the purpose of preventing the operation of an explosive device by projecting a liquid, solid or frangible projectile.

Note: 1A006 does not control equipment when accompanying its operator.

1A007 Equipment and devices, specially designed to initiate charges and devices containing "energetic materials", by electrical means, as follows:

N.B. SEE ALSO MILITARY GOODS CONTROLS, 3A229 AND 3A232.

Explosive detonator firing sets designed to drive explosive detonators specified in 1A007.b.;

Electrically driven explosive detonators as follows:

Exploding bridge (EB);

Exploding bridge wire (EBW);

Slapper;

Exploding foil initiators (EFI).

Technical Notes:

1. The word initiator or igniter is sometimes used in place of the word detonator.

2. For the purpose of 1A007.b. the detonators of concern all utilise a small electrical conductor (bridge, bridge wire, or foil) that explosively vaporises when a fast, high-current electrical pulse is passed through it. In non-slapper types, the exploding conductor starts a chemical detonation in a contacting high explosive material such as PETN (pentaerythritoltetranitrate). In slapper detonators, the explosive vaporization of the electrical conductor drives a flyer or slapper across a gap, and the impact of the slapper on an explosive starts a chemical detonation. The slapper in some designs is driven by magnetic force. The term exploding foil detonator may refer to either an EB or a slapper-type detonator.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

1A008 Charges, devices and components, as follows:

‘Shaped charges’ having all of the following:

Net Explosive Quantity (NEQ) greater than 90 g; and

Outer casing diameter equal to or greater than 75 mm;

Linear shaped cutting charges having all of the following, and specially designed components therefor:

An explosive load greater than 40 g/m; and

A width of 10 mm or more;

Detonating cord with explosive core load greater than 64 g/m;

Cutters, other than those specified in 1A008.b., and severing tools, having a Net Explosive Quantity (NEQ) greater than 3,5 kg.

Technical Note:

‘Shaped charges’ are explosive charges shaped to focus the effects of the explosive blast.

1A102 Resaturated pyrolised carbon-carbon components designed for space launch vehicles specified in 9A004 or sounding rockets specified in 9A104.

1A202 Composite structures, other than those specified in 1A002, in the form of tubes and having both of the following characteristics:

N.B. SEE ALSO 9A010 AND 9A110.

An inside diameter of between 75 mm and 400 mm; and

Made with any of the "fibrous or filamentary materials" specified in 1C010.a. or b. or 1C210.a. or with carbon prepreg materials specified in 1C210.c.

1A225 Platinized catalysts specially designed or prepared for promoting the hydrogen isotope exchange reaction between hydrogen and water for the recovery of tritium from heavy water or for the production of heavy water.

1A226 Specialised packings which may be used in separating heavy water from ordinary water, having both of the following characteristics:

Made of phosphor bronze mesh chemically treated to improve wettability; and

Designed to be used in vacuum distillation towers.

1A227 High-density (lead glass or other) radiation shielding windows, having all of the following characteristics, and specially designed frames therefor:

A ‘cold area’ greater than 0,09 m²;

A density greater than 3 g/cm³; and

A thickness of 100 mm or greater.

Technical Note:

In 1A227 the term ‘cold area’ means the viewing area of the window exposed to the lowest level of radiation in the design application.

1B Test, Inspection and Production Equipment

1B001 Equipment for the production or inspection of "composite" structures or laminates specified in 1A002 or "fibrous or filamentary materials" specified in 1C010, as follows, and specially designed components and accessories therefor:

N.B. SEE ALSO 1B101 AND 1B201.

Filament winding machines, of which the motions for positioning, wrapping and winding fibres are coordinated and programmed in three or more ‘primary servo positioning’ axes, specially designed for the manufacture of "composite" structures or laminates, from "fibrous or filamentary materials";

‘Tape-laying machines’, of which the motions for positioning and laying tape are coordinated and programmed in five or more ‘primary servo positioning’ axes, specially designed for the manufacture of "composite" airframe or ‘missile’ structures;

Note: In 1B001.b., ‘missile’ means complete rocket systems and unmanned aerial vehicle systems.

Technical Note:

For the purposes of 1B001.b., ‘tape-laying machines’ have the ability to lay one or more ‘filament bands’ limited to widths greater than 25,4 mm and less than or equal to 304,8 mm, and to cut and restart individual ‘filament band’ courses during the laying process.

Multidirectional, multidimensional weaving machines or interlacing machines, including adapters and modification kits, specially designed or modified for weaving, interlacing or braiding fibres, for "composite" structures;

Technical Note:

For the purposes of 1B001.c., the technique of interlacing includes knitting.

Equipment specially designed or adapted for the production of reinforcement fibres, as follows:

Equipment for converting polymeric fibres (such as polyacrylonitrile, rayon, pitch or polycarbosilane) into carbon fibres or silicon carbide fibres, including special equipment to strain the fibre during heating;

Equipment for the chemical vapour deposition of elements or compounds, on heated filamentary substrates, to manufacture silicon carbide fibres;

Equipment for the wet-spinning of refractory ceramics (such as aluminium oxide);

Equipment for converting aluminium containing precursor fibres into alumina fibres by heat treatment;

Equipment for producing prepregs specified in 1C010.e. by the hot melt method;

Non-destructive inspection equipment specially designed for "composite" materials, as follows:

X-ray tomography systems for three dimensional defect inspection;

Numerically controlled ultrasonic testing machines of which the motions for positioning transmitters or receivers are simultaneously coordinated and programmed in four or more axes to follow the three dimensional contours of the component under inspection;

‘Tow-placement machines’, of which the motions for positioning and laying tows are coordinated and programmed in two or more ‘primary servo positioning’ axes, specially designed for the manufacture of "composite" airframe or ‘missile’ structures.

Technical Note:

For the purposes of 1B001.g., ‘tow-placement machines’ have the ability to place one or more ‘filament bands’ having widths less than or equal to 25,4 mm, and to cut and restart individual ‘filament band’ courses during the placement process.

Technical Notes:

1. For the purpose of 1B001, ‘primary servo positioning’ axes control, under computer program direction, the position of the end effector (i.e., head) in space relative to the work piece at the correct orientation and direction to achieve the desired process.

2. For the purposes of 1B001, a ‘filament band’ is a single continuous width of fully or partially resin-impregnated tape, tow or fibre. Fully or partially resin-impregnated ‘filament bands’ include those coated with dry powder that tacks upon heating.

1B002 Equipment designed to produce metal alloy powder or particulate materials, and having all of the following:

Specially designed to avoid contamination; and

Specially designed for use in one of the processes specified in 1C002.c.2.

N.B. SEE ALSO 1B102.

1B003 Tools, dies, moulds or fixtures, for "superplastic forming" or "diffusion bonding" titanium, aluminium or their alloys, specially designed for the manufacture of any of the following:

Airframe or aerospace structures;

"Aircraft" or aerospace engines; or

Specially designed components for structures specified in 1B003.a. or for engines specified in 1B003.b.

1B101 Equipment, other than that specified in 1B001, for the "production" of structural composites as follows; and specially designed components and accessories therefor:

N.B. SEE ALSO 1B201.

Note: Components and accessories specified in 1B101 include moulds, mandrels, dies, fixtures and tooling for the preform pressing, curing, casting, sintering or bonding of composite structures, laminates and manufactures thereof.

Filament winding machines or fibre placement machines, of which the motions for positioning, wrapping and winding fibres can be coordinated and programmed in three or more axes, designed to fabricate composite structures or laminates from "fibrous or filamentary materials", and coordinating and programming controls;

Tape-laying machines of which the motions for positioning and laying tape and sheets can be coordinated and programmed in two or more axes, designed for the manufacture of composite airframe and "missile" structures;

Equipment designed or modified for the "production" of "fibrous or filamentary materials" as follows:

Equipment for converting polymeric fibres (such as polyacrylonitrile, rayon or polycarbosilane) including special provision to strain the fibre during heating;

Equipment for the vapour deposition of elements or compounds on heated filament substrates;

Equipment for the wet-spinning of refractory ceramics (such as aluminium oxide);

Equipment designed or modified for special fibre surface treatment or for producing prepregs and preforms specified in entry 9C110.

Note: 1B101.d. includes rollers, tension stretchers, coating equipment, cutting equipment and clicker dies.

1B102 Metal powder "production equipment", other than that specified in 1B002, and components as follows:

N.B. SEE ALSO 1B115.b.

Metal powder "production equipment" usable for the "production", in a controlled environment, of spherical, spheroidal or atomised materials specified in 1C011.a., 1C011.b., 1C111.a.1., 1C111.a.2. or in the Military Goods Controls.

Specially designed components for "production equipment" specified in 1B002 or 1B102.a.

Note: 1B102 includes:

a. Plasma generators (high frequency arc-jet) usable for obtaining sputtered or spherical metallic powders with organization of the process in an argon-water environment;

b. Electroburst equipment usable for obtaining sputtered or spherical metallic powders with organization of the process in an argon-water environment;

c. Equipment usable for the "production" of spherical aluminium powders by powdering a melt in an inert medium (e.g. nitrogen).

1B115 Equipment, other than that specified in 1B002 or 1B102, for the production of propellant and propellant constituents, as follows, and specially designed components therefor:

"Production equipment" for the "production", handling or acceptance testing of liquid propellants or propellant constituents specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls;

"Production equipment" for the "production", handling, mixing, curing, casting, pressing, machining, extruding or acceptance testing of solid propellants or propellant constituents specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls.

Note: 1B115.b. does not control batch mixers, continuous mixers or fluid energy mills. For the control of batch mixers, continuous mixers and fluid energy mills see 1B117, 1B118 and 1B119.

Note 1: For equipment specially designed for the production of military goods, see the Military Goods Controls.

Note 2: 1B115 does not control equipment for the "production", handling and acceptance testing of boron carbide.

1B116 Specially designed nozzles for producing pyrolitically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1 573 K (1 300 °C) to 3 173 K (2 900 °C) temperature range at pressures of 130 Pa to 20 kPa.

1B117 Batch mixers having all of the following, and specially designed components therefor:

Designed or modified for mixing under vacuum in the range of zero to 13,326 kPa:

Capable of controlling the temperature of the mixing chamber;

A total volumetric capacity of 110 litres or more; and

At least one ‘mixing/kneading shaft’ mounted off centre.

Note: In 1B117.d. the term ‘mixing/kneading shaft’ does not refer to deagglomerators or knife-spindles.

1B118 Continuous mixers having all of the following, and specially designed components therefor:

Designed or modified for mixing under vacuum in the range of zero to 13,326 kPa;

Capable of controlling the temperature of the mixing chamber;

any of the following:

Two or more mixing/kneading shafts; or

All of the following:

a. A single rotating and oscillating shaft with kneading teeth/pins; and

b. Kneading teeth/pins inside the casing of the mixing chamber.

1B119 Fluid energy mills usable for grinding or milling substances specified in 1C011.a., 1C011.b., 1C111 or in the Military Goods Controls, and specially designed components therefor.

1B201 Filament winding machines, other than those specified in 1B001 or 1B101, and related equipment, as follows:

Filament winding machines having all of the following characteristics:

Having motions for positioning, wrapping, and winding fibres coordinated and programmed in two or more axes;

Specially designed to fabricate composite structures or laminates from "fibrous or filamentary materials"; and

Capable of winding cylindrical tubes with an internal diameter between 75 and 650 mm and lengths of 300 mm or greater;

Coordinating and programming controls for the filament winding machines specified in 1B201.a.;

Precision mandrels for the filament winding machines specified in 1B201.a.

1B225 Electrolytic cells for fluorine production with an output capacity greater than 250 g of fluorine per hour.

1B226 Electromagnetic isotope separators designed for, or equipped with, single or multiple ion sources capable of providing a total ion beam current of 50 mA or greater.

Note: 1B226 includes separators:

a. Capable of enriching stable isotopes;

b. With the ion sources and collectors both in the magnetic field and those configurations in which they are external to the field.

1B228 Hydrogen-cryogenic distillation columns having all of the following characteristics:

Designed for operation with internal temperatures of 35 K (–238 °C) or less;

Designed for operation at an internal pressure of 0,5 to 5 MPa;

Constructed of either:

Stainless steel of the Society of Automotive Engineers International (SAE) 300 series with low sulphur content and with an austenitic ASTM (or equivalent standard) grain size number of 5 or greater; or

Equivalent materials which are both cryogenic and hydrogen (H₂)-compatible; and

With internal diameters of 30 cm or greater and ‘effective lengths’ of 4 m or greater.

Technical Note:

In 1B228 ‘effective length’ means the active height of packing material in a packed-type column, or the active height of internal contactor plates in a plate-type column.

1B230 Pumps capable of circulating solutions of concentrated or dilute potassium amide catalyst in liquid ammonia (KNH₂/NH₃), having all of the following characteristics:

Airtight (i.e., hermetically sealed);

A capacity greater than 8,5 m³/h; and

Either of the following characteristics:

For concentrated potassium amide solutions (1 % or greater), an operating pressure of 1,5 to 60 MPa; or

For dilute potassium amide solutions (less than 1 %), an operating pressure of 20 to 60 MPa.

1B231 Tritium facilities or plants, and equipment therefor, as follows:

Facilities or plants for the production, recovery, extraction, concentration, or handling of tritium;

Equipment for tritium facilities or plants, as follows:

Hydrogen or helium refrigeration units capable of cooling to 23 K (–250 °C) or less, with heat removal capacity greater than 150 W;

Hydrogen isotope storage or hydrogen isotope purification systems using metal hydrides as the storage or purification medium.

1B232 Turboexpanders or turboexpander-compressor sets having both of the following characteristics:

Designed for operation with an outlet temperature of 35 K (–238 °C) or less; and

Designed for a throughput of hydrogen gas of 1 000 kg/h or greater.

1B233 Lithium isotope separation facilities or plants, and systems and equipment therefor, as follows:

Facilities or plants for the separation of lithium isotopes;

Equipment for the separation of lithium isotopes based on the lithium-mercury amalgam process, as follows:

Packed liquid-liquid exchange columns specially designed for lithium amalgams;

Mercury or lithium amalgam pumps;

Lithium amalgam electrolysis cells;

Evaporators for concentrated lithium hydroxide solution;

Ion exchange systems specially designed for lithium isotope separation, and specially designed components therefor;

Chemical exchange systems (employing crown ethers, cryptands, or lariat ethers), specially designed for lithium isotope separation, and specially designed components therefor.

1B234 High explosive containment vessels, chambers, containers and other similar containment devices designed for the testing of high explosives or explosive devices and having both of the following characteristics:

N.B. SEE ALSO MILITARY GOODS CONTROLS.

Designed to fully contain an explosion equivalent to 2 kg of trinitrotoluene (TNT) or greater; and

Having design elements or features enabling real time or delayed transfer of diagnostic or measurement information.

1B235 Target assemblies and components for the production of tritium as follows:

Target assemblies made of or containing lithium enriched in the lithium-6 isotope specially designed for the production of tritium through irradiation, including insertion in a nuclear reactor;

Components specially designed for the target assemblies specified in 1B235.a.

Technical Note:

Components specially designed for target assemblies for the production of tritium may include lithium pellets, tritium getters, and specially-coated cladding.

1C Materials

Technical Note:

Metals and alloys:

Unless provision to the contrary is made, the words ‘metals’ and ‘alloys’ in 1C001 to 1C012 cover crude and semi-fabricated forms, as follows:

Crude forms:

Anodes, balls, bars (including notched bars and wire bars), billets, blocks, blooms, brickets, cakes, cathodes, crystals, cubes, dice, grains, granules, ingots, lumps, pellets, pigs, powder, rondelles, shot, slabs, slugs, sponge, sticks;

Semi-fabricated forms (whether or not coated, plated, drilled or punched):

a. Wrought or worked materials fabricated by rolling, drawing, extruding, forging, impact extruding, pressing, graining, atomising, and grinding, i.e.: angles, channels, circles, discs, dust, flakes, foils and leaf, forging, plate, powder, pressings and stampings, ribbons, rings, rods (including bare welding rods, wire rods, and rolled wire), sections, shapes, sheets, strip, pipe and tubes (including tube rounds, squares, and hollows), drawn or extruded wire;

b. Cast material produced by casting in sand, die, metal, plaster or other types of moulds, including high pressure castings, sintered forms, and forms made by powder metallurgy.

The object of the control should not be defeated by the export of non-listed forms alleged to be finished products but representing in reality crude forms or semi-fabricated forms.

1C001 Materials specially designed for absorbing electromagnetic radiation, or intrinsically conductive polymers, as follows:

N.B. SEE ALSO 1C101.

Materials for absorbing frequencies exceeding 2 × 10⁸ Hz but less than 3 × 10¹² Hz;

Note 1: 1C001.a. does not control:

a. Hair type absorbers, constructed of natural or synthetic fibres, with non-magnetic loading to provide absorption;

b. Absorbers having no magnetic loss and whose incident surface is non-planar in shape, including pyramids, cones, wedges and convoluted surfaces;

c. Planar absorbers, having all of the following:

1. Made from any of the following:

a. Plastic foam materials (flexible or non-flexible) with carbon-loading, or organic materials, including binders, providing more than 5 % echo compared with metal over a bandwidth exceeding ±15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 450 K (177 °C); or

b. Ceramic materials providing more than 20 % echo compared with metal over a bandwidth exceeding ±15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 800 K (527 °C);

Technical Note:

Absorption test samples for 1C001.a. Note: 1.c.1. should be a square at least 5 wavelengths of the centre frequency on a side and positioned in the far field of the radiating element.

2. Tensile strength less than 7 × 10⁶ N/m²; and

3. Compressive strength less than 14 × 10⁶ N/m²;

d. Planar absorbers made of sintered ferrite, having all of the following:

1. A specific gravity exceeding 4,4; and

2. A maximum operating temperature of 548 K (275 °C) or less;

e. Planar absorbers having no magnetic loss and fabricated from ‘open-cell foam’ plastic material with a density of 0,15 g/cm³ or less.

Technical Note:

‘Open-cell foams’ are flexible and porous materials, having an inner structure open to the atmosphere. ‘Open-cell foams’ are also known as reticulated foams.

Note 2: Nothing in Note 1 to 1C001.a. releases magnetic materials to provide absorption when contained in paint.

Materials not transparent to visible light and specially designed for absorbing near-infrared radiation having a wavelength exceeding 810 nm but less than 2 000 nm (frequencies exceeding 150 THz but less than 370 THz);

Note: 1C001.b. does not control materials, specially designed or formulated for any of the following applications:

a. "Laser" marking of polymers; or

b. "Laser" welding of polymers.

Intrinsically conductive polymeric materials with a ‘bulk electrical conductivity’ exceeding 10 000 S/m (Siemens per metre) or a ‘sheet (surface) resistivity’ of less than 100 ohms/square, based on any of the following polymers:

Polyaniline;

Polypyrrole;

Polythiophene;

Poly phenylene-vinylene; or

Poly thienylene-vinylene.

Note: 1C001.c. does not control materials in a liquid form.

Technical Note:

‘Bulk electrical conductivity’ and ‘sheet (surface) resistivity’ should be determined using ASTM D-257 or national equivalents.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

1C002 Metal alloys, metal alloy powder and alloyed materials, as follows:

N.B. SEE ALSO 1C202.

Note: 1C002 does not control metal alloys, metal alloy powder and alloyed materials, specially formulated for coating purposes.

Technical Notes:

1. The metal alloys in 1C002 are those containing a higher percentage by weight of the stated metal than of any other element.

2. ‘Stress-rupture life’ should be measured in accordance with ASTM standard E-139 or national equivalents.

3. ‘Low cycle fatigue life’ should be measured in accordance with ASTM standard E-606 ‘Recommended Practice for Constant-Amplitude Low-Cycle Fatigue Testing’ or national equivalents. Testing should be axial with an average stress ratio equal to 1 and a stress-concentration factor (Kt) equal to 1. The average stress ratio is defined as maximum stress minus minimum stress divided by maximum stress.

Aluminides, as follows:

Nickel aluminides containing a minimum of 15 % by weight aluminium, a maximum of 38 % by weight aluminium and at least one additional alloying element;

Titanium aluminides containing 10 % by weight or more aluminium and at least one additional alloying element;

Metal alloys, as follows, made from the powder or particulate material specified in 1C002.c.:

Nickel alloys having any of the following:

a. A ‘stress-rupture life’ of 10 000 hours or longer at 923 K (650 °C) at a stress of 676 MPa; or

b. A ‘low cycle fatigue life’ of 10 000 cycles or more at 823 K (550 °C) at a maximum stress of 1 095 MPa;

Niobium alloys having any of the following:

a. A ‘stress-rupture life’ of 10 000 hours or longer at 1 073 K (800 °C) at a stress of 400 MPa; or

b. A ‘low cycle fatigue life’ of 10 000 cycles or more at 973 K (700 °C) at a maximum stress of 700 MPa;

Titanium alloys having any of the following:

a. A ‘stress-rupture life’ of 10 000 hours or longer at 723 K (450 °C) at a stress of 200 MPa; or

b. A ‘low cycle fatigue life’ of 10 000 cycles or more at 723 K (450 °C) at a maximum stress of 400 MPa;

Aluminium alloys having any of the following:

a. A tensile strength of 240 MPa or more at 473 K (200 °C); or

b. A tensile strength of 415 MPa or more at 298 K (25 °C);

Magnesium alloys having all of the following:

a. A tensile strength of 345 MPa or more; and

b. A corrosion rate of less than 1 mm/year in 3 % sodium chloride aqueous solution measured in accordance with ASTM standard G-31 or national equivalents;

Metal alloy powder or particulate material, having all of the following:

Made from any of the following composition systems:

Technical Note:

X in the following equals one or more alloying elements.

a. Nickel alloys (Ni-Al-X, Ni-X-Al) qualified for turbine engine parts or components, i.e. with less than 3 non-metallic particles (introduced during the manufacturing process) larger than 100 μm in 10⁹ alloy particles;

b. Niobium alloys (Nb-Al-X or Nb-X-Al, Nb-Si-X or Nb-X-Si, Nb-Ti-X or Nb-X-Ti);

c. Titanium alloys (Ti-Al-X or Ti-X-Al);

d. Aluminium alloys (Al-Mg-X or Al-X-Mg, Al-Zn-X or Al-X-Zn, Al-Fe-X or Al-X-Fe); or

e. Magnesium alloys (Mg-Al-X or Mg-X-Al);

Made in a controlled environment by any of the following processes:

a. ‘Vacuum atomisation’;

b. ‘Gas atomisation’;

c. ‘Rotary atomisation’;

d. ‘Splat quenching’;

e. ‘Melt spinning’ and ‘comminution’;

f. ‘Melt extraction’ and ‘comminution’;

g. ‘Mechanical alloying’; or

h. ‘Plasma atomisation’; and

Capable of forming materials specified in 1C002.a. or 1C002.b.;

Alloyed materials having all of the following:

Made from any of the composition systems specified in 1C002.c.1.;

In the form of uncomminuted flakes, ribbons or thin rods; and

Produced in a controlled environment by any of the following:

a. ‘Splat quenching’;

b. ‘Melt spinning’; or

c. ‘Melt extraction’.

Technical Notes:

1. ‘Vacuum atomisation’ is a process to reduce a molten stream of metal to droplets of a diameter of 500 μm or less by the rapid evolution of a dissolved gas upon exposure to a vacuum.

2. ‘Gas atomisation’ is a process to reduce a molten stream of metal alloy to droplets of 500 μm diameter or less by a high pressure gas stream.

3. ‘Rotary atomisation’ is a process to reduce a stream or pool of molten metal to droplets to a diameter of 500 μm or less by centrifugal force.

4. ‘Splat quenching’ is a process to ‘solidify rapidly’ a molten metal stream impinging upon a chilled block, forming a flake-like product.

5. ‘Melt spinning’ is a process to ‘solidify rapidly’ a molten metal stream impinging upon a rotating chilled block, forming a flake, ribbon or rod-like product.

6. ‘Comminution’ is a process to reduce a material to particles by crushing or grinding.

7. ‘Melt extraction’ is a process to ‘solidify rapidly’ and extract a ribbon-like alloy product by the insertion of a short segment of a rotating chilled block into a bath of a molten metal alloy.

8. ‘Mechanical alloying’ is an alloying process resulting from the bonding, fracturing and rebonding of elemental and master alloy powders by mechanical impact. Non-metallic particles may be incorporated in the alloy by addition of the appropriate powders.

9. ‘Plasma atomisation’ is a process to reduce a molten stream or solid metal to droplets of 500 μm diameter or less, using plasma torches in an inert gas environment.

10. ‘Solidify rapidly’ is a process involving the solidification of molten material at cooling rates exceeding 1 000 K/sec.

1C003 Magnetic metals, of all types and of whatever form, having any of the following:

Initial relative permeability of 120 000 or more and a thickness of 0,05 mm or less;

Technical Note:

Measurement of initial relative permeability must be performed on fully annealed materials.

Magnetostrictive alloys having any of the following:

A saturation magnetostriction of more than 5 × 10⁻⁴; or

A magnetomechanical coupling factor (k) of more than 0,8; or

Amorphous or ‘nanocrystalline’ alloy strips, having all of the following:

A composition having a minimum of 75 % by weight of iron, cobalt or nickel;

A saturation magnetic induction (Bs) of 1,6 T or more; and

Any of the following:

a. A strip thickness of 0,02 mm or less; or

b. An electrical resistivity of 2 × 10^–4 ohm cm or more.

Technical Note:

‘Nanocrystalline’ materials in 1C003.c. are those materials having a crystal grain size of 50 nm or less, as determined by X-ray diffraction.

1C004 Uranium titanium alloys or tungsten alloys with a "matrix" based on iron, nickel or copper, having all of the following:

A density exceeding 17,5 g/cm³;

An elastic limit exceeding 880 MPa;

An ultimate tensile strength exceeding 1 270 MPa; and

An elongation exceeding 8 %.

1C005 "Superconductive" "composite" conductors in lengths exceeding 100 m or with a mass exceeding 100 g, as follows:

"Superconductive" "composite" conductors consisting of one or more "superconductive" ‘filaments’ other than niobium-titanium, having all of the following:

A "critical temperature" at zero magnetic induction exceeding 9,85 K (–263,31 °C); and

Remaining in the "superconductive" state at a temperature of 4,2 K (–268,96 °C) when exposed to a magnetic field oriented in any direction perpendicular to the longitudinal axis of conductor and corresponding to a magnetic induction of 12 T with critical current density exceeding 1 750 A/mm² on overall cross-section of the conductor;

"Superconductive" "composite" conductors containing one or more niobium-titanium ‘filaments’, having all of the following:

Embedded in a "matrix" other than a copper or copper-based mixed "matrix"; and

Having a cross-section area less than 0,28 × 10⁻⁴ mm² (6 μm in diameter for circular ‘filaments’);

"Superconductive" "composite" conductors consisting of one or more "superconductive" ‘filaments’ which remain "superconductive" above 115 K (–158,16 °C).

Technical Note:

For the purpose of 1C005 ‘filaments’ may be in wire, cylinder, film, tape or ribbon form.

1C006 Fluids and lubricating materials, as follows:

Not used;

Lubricating materials containing, as their principal ingredients, any of the following:

Phenylene or alkylphenylene ethers or thio-ethers, or their mixtures, containing more than two ether or thio-ether functions or mixtures thereof; or

Fluorinated silicone fluids with a kinematic viscosity of less than 5 000 mm²/s (5 000 centistokes) measured at 298 K (25 °C);

Damping or flotation fluids having all of the following:

Purity exceeding 99,8 %;

Containing less than 25 particles of 200 μm or larger in size per 100 ml; and

Made from at least 85 % of any of the following:

a. Dibromotetrafluoroethane (CAS 25497-30-7, 124-73-2, 27336-23-8);

b. Polychlorotrifluoroethylene (oily and waxy modifications only); or

c. Polybromotrifluoroethylene;

Fluorocarbon fluids designed for electronic cooling and having all of the following:

Containing 85 % by weight or more of any of the following, or mixtures thereof:

a. Monomeric forms of perfluoropolyalkylether-triazines or perfluoroaliphatic-ethers;

b. Perfluoroalkylamines;

c. Perfluorocycloalkanes; or

d. Perfluoroalkanes;

Density at 298 K (25 °C) of 1,5 g/ml or more;

In a liquid state at 273 K (0 °C); and

Containing 60 % or more by weight of fluorine.

Note: 1C006.d. does not control materials specified and packaged as medical products.

1C007 Ceramic powders, ceramic-"matrix" "composite" materials and ‘precursor materials’, as follows:

N.B. SEE ALSO 1C107.

Ceramic powders of titanium diboride (TiB2) (CAS 12045-63-5) having total metallic impurities, excluding intentional additions, of less than 5 000 ppm, an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm;

Not used;

Ceramic-"matrix" "composite" materials as follows:

Ceramic-ceramic "composite" materials with a glass or oxide-"matrix" and reinforced with any of the following:

a. Continuous fibres made from any of the following materials:

1. Al₂O₃ (CAS 1344-28-1); or

2. Si-C-N; or

Note: 1C007.c.1.a. does not control "composites" containing fibres with a tensile strength of less than 700 MPa at 1 273 K (1 000 °C) or tensile creep resistance of more than 1 % creep strain at 100 MPa load and 1 273 K (1 000 °C) for 100 hours.

b. Fibres being all of the following:

1. Made from any of the following materials:

a. Si-N;

b. Si-C;

c. Si-Al-O-N; or

d. Si-O-N; and

2. Having a "specific tensile strength" exceeding 12,7 × 10³m;

Ceramic “matrix” "composite" materials, with a "matrix" formed of carbides or nitrides of silicon, zirconium or boron;

Not used;

‘Precursor materials’ specially designed for the "production" of materials specified in 1C007.c., as follows:

Polydiorganosilanes;

Polysilazanes;

Polycarbosilazanes;

Not used.

Technical Note:

For the purposes of 1C007, ‘precursor materials’ are special purpose polymeric or metallo-organic materials used for the "production" of silicon carbide, silicon nitride, or ceramics with silicon, carbon and nitrogen.

1C008 Non-fluorinated polymeric substances as follows:

Imides, as follows:

Bismaleimides;

Aromatic polyamide-imides (PAI) having a ‘glass transition temperature (Tg)’ exceeding 563 K (290 °C);

Aromatic polyimides having a ‘glass transition temperature (Tg)’ exceeding 505 K (232 °C);

Aromatic polyetherimides having a ‘glass transition temperature (Tg)’ exceeding 563 K (290 °C);

Note: 1C008.a. controls substances in liquid or solid "fusible" form, including resin, powder, pellet, film, sheet, tape or ribbon.

N.B. For non-"fusible" aromatic polyimides in film, sheet, tape or ribbon form, see 1A003.

Not used;

Polyarylene ketones;

Polyarylene sulphides, where the arylene group is biphenylene, triphenylene or combinations thereof;

Polybiphenylenethersulphone having a ‘glass transition temperature (Tg)’ exceeding 563 K (290 °C).

Technical Notes:

1. The ‘glass transition temperature (T_g)’ for 1C008.a.2. thermoplastic materials, 1C008.a.4. materials and 1C008.f. materials is determined using the method described in ISO 11357-2:1999 or national equivalents

2. The ‘glass transition temperature (T_g)’ for 1C008.a.2. thermosetting materials and 1C008.a.3. materials is determined using the 3-point bend method described in ASTM D 7028-07 or equivalent national standard. The test is to be performed using a dry test specimen which has attained a minimum of 90 % degree of cure as specified by ASTM E 2160-04 or equivalent national standard, and was cured using the combination of standard- and post-cure processes that yield the highest T_g.

1C009 Unprocessed fluorinated compounds as follows:

Not used;

Fluorinated polyimides containing 10 % by weight or more of combined fluorine;

Fluorinated phosphazene elastomers containing 30 % by weight or more of combined fluorine.

1C010 "Fibrous or filamentary materials", as follows:

N.B. SEE ALSO 1C210 AND 9C110.

Technical Notes:

1. For the purpose of calculating "specific tensile strength", "specific modulus" or specific weight of "fibrous or filamentary materials" in 1C010.a., 1C010.b., 1C010.c. or 1C010.e.1.b., the tensile strength and modulus should be determined by using Method A described in ISO 10618:2004 or national equivalents.

2. Assessing the "specific tensile strength", "specific modulus" or specific weight of non-unidirectional "fibrous or filamentary materials" (e.g., fabrics, random mats or braids) in 1C010 is to be based on the mechanical properties of the constituent unidirectional monofilaments (e.g., monofilaments, yarns, rovings or tows) prior to processing into the non-unidirectional "fibrous or filamentary materials".

Organic "fibrous or filamentary materials", having all of the following:

"Specific modulus" exceeding 12,7 × 10⁶ m; and

"Specific tensile strength" exceeding 23,5 × 10⁴ m;

Note: 1C010.a. does not control polyethylene.

Carbon "fibrous or filamentary materials", having all of the following:

"Specific modulus" exceeding 14,65 × 10⁶ m; and

"Specific tensile strength" exceeding 26,82 × 10⁴ m;

Note: 1C010.b. does not control:

a. "Fibrous or filamentary materials", for the repair of "civil aircraft" structures or laminates, having all of the following:

1. An area not exceeding 1 m²;

2. A length not exceeding 2,5 m; and

3. A width exceeding 15 mm.

b. Mechanically chopped, milled or cut carbon "fibrous or filamentary materials" 25,0 mm or less in length.

Inorganic "fibrous or filamentary materials", having all of the following:

Having any of the following:

a. Composed of 50 % or more by weight silicon dioxide and having a "specific modulus" exceeding 2,54 × 10⁶ m; or

b. Not specified in 1C010.c.1.a. and having a "specific modulus" exceeding 5,6 × 10⁶ m; and

Melting, softening, decomposition or sublimation point exceeding 1 922 K (1 649 °C) in an inert environment;

Note: 1C010.c. does not control:

a. Discontinuous, multiphase, polycrystalline alumina fibres in chopped fibre or random mat form, containing 3 % by weight or more silica, with a "specific modulus" of less than 10 × 10⁶ m;

b. Molybdenum and molybdenum alloy fibres;

c. Boron fibres;

d. Discontinuous ceramic fibres with a melting, softening, decomposition or sublimation point lower than 2 043 K (1 770 °C) in an inert environment.

"Fibrous or filamentary materials", having any of the following:

Composed of any of the following:

a. Polyetherimides specified in 1C008.a.; or

b. Materials specified in 1C008.d. to 1C008.f.; or

Composed of materials specified in 1C010.d.1.a. or 1C010.d.1.b. and ‘commingled’ with other fibres specified in 1C010.a., 1C010.b. or 1C010.c.;

Technical Note:

‘Commingled’ is filament to filament blending of thermoplastic fibres and reinforcement fibres in order to produce a fibre reinforcement "matrix" mix in total fibre form.

Fully or partially resin-impregnated or pitch-impregnated "fibrous or filamentary materials" (prepregs), metal or carbon-coated "fibrous or filamentary materials" (preforms) or ‘carbon fibre preforms’, having all of the following:

Having any of the following:

a. Inorganic "fibrous or filamentary materials" specified in 1C010.c.; or

b. Organic or carbon "fibrous or filamentary materials", having all of the following:

1. "Specific modulus" exceeding 10,15 × 10⁶ m; and

2. "Specific tensile strength" exceeding 17,7 × 10⁴ m; and

Having any of the following:

a. Resin or pitch, specified in 1C008 or 1C009.b.;

b. ‘Dynamic Mechanical Analysis glass transition temperature (DMA Tg)’ equal to or exceeding 453 K (180 °C) and having a phenolic resin; or

c. ‘Dynamic Mechanical Analysis glass transition temperature (DMA Tg)’ equal to or exceeding 505 K (232 °C) and having a resin or pitch, not specified in 1C008 or 1C009.b., and not being a phenolic resin;

Note 1: Metal or carbon-coated "fibrous or filamentary materials" (preforms) or ‘carbon fibre preforms’, not impregnated with resin or pitch, are specified by "fibrous or filamentary materials" in 1C010.a., 1C010.b. or 1C010.c.

Note 2: 1C010.e. does not control:

a. Epoxy resin "matrix" impregnated carbon "fibrous or filamentary materials" (prepregs) for the repair of "civil aircraft" structures or laminates, having all the following;

1. An area not exceeding 1 m²;

2. A length not exceeding 2,5 m; and

3. A width exceeding 15 mm.

b. Fully or partially resin-impregnated or pitch-impregnated mechanically chopped, milled or cut carbon "fibrous or filamentary materials" 25,0 mm or less in length when using a resin or pitch other than those specified in 1C008 or 1C009.b.

Technical Notes:

1. ‘Carbon fibre preforms’ are an ordered arrangement of uncoated or coated fibres intended to constitute a framework of a part before the "matrix" is introduced to form a "composite".

2. The ‘Dynamic Mechanical Analysis glass transition temperature (DMA T_g)’ for materials specified in 1C010.e. is determined using the method described in ASTM D 7028-07, or equivalent national standard, on a dry test specimen. In the case of thermoset materials, degree of cure of a dry test specimen shall be a minimum of 90 % as defined by ASTM E 2160-04 or equivalent national standard.

1C011 Metals and compounds, as follows:

N.B. SEE ALSO MILITARY GOODS CONTROLS AND 1C111.

Metals in particle sizes of less than 60 μm whether spherical, atomised, spheroidal, flaked or ground, manufactured from material consisting of 99 % or more of zirconium, magnesium and alloys thereof;

Technical Note:

The natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium.

Note: The metals or alloys specified in 1C011.a. are controlled whether or not the metals or alloys are encapsulated in aluminium, magnesium, zirconium or beryllium.

Boron or boron alloys, with a particle size of 60 μm or less, as follows:

Boron with a purity of 85 % by weight or more;

Boron alloys with a boron content of 85 % by weight or more;

Note: The metals or alloys specified in 1C011.b. are controlled whether or not the metals or alloys are encapsulated in aluminium, magnesium, zirconium or beryllium.

Guanidine nitrate (CAS 506-93-4);

Nitroguanidine (NQ) (CAS 556-88-7).

N.B. See also Military Goods Controls for metal powders mixed with other substances to form a mixture formulated for military purposes.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

1C012 Materials as follows:

Technical Note:

These materials are typically used for nuclear heat sources.

Plutonium in any form with a plutonium isotopic assay of plutonium-238 of more than 50 % by weight;

Note: 1C012.a. does not control:

a. Shipments with a plutonium content of 1 g or less;

b. Shipments of 3 "effective grammes" or less when contained in a sensing component in instruments.

"Previously separated" neptunium-237 in any form.

Note: 1C012.b. does not control shipments with a neptunium-237 content of 1 g or less.

1C101 Materials and devices for reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures, other than those specified in 1C001, usable in ‘missiles’, "missile" subsystems or unmanned aerial vehicles specified in 9A012 or 9A112.a.

Note 1: 1C101 includes:

a. Structural materials and coatings specially designed for reduced radar reflectivity;

b. Coatings, including paints, specially designed for reduced or tailored reflectivity or emissivity in the microwave, infrared or ultraviolet regions of the electromagnetic spectrum.

Note 2: 1C101 does not include coatings when specially used for the thermal control of satellites.

Technical Note:

In 1C101 ‘missile’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

1C102 Resaturated pyrolised carbon-carbon materials designed for space launch vehicles specified in 9A004 or sounding rockets specified in 9A104.

1C107 Graphite and ceramic materials, other than those specified in 1C007, as follows:

Fine grain graphites with a bulk density of 1,72 g/cm³ or greater, measured at 288 K (15 °C), and having a grain size of 100 μm or less, usable for rocket nozzles and re-entry vehicle nose tips, which can be machined to any of the following products:

Cylinders having a diameter of 120 mm or greater and a length of 50 mm or greater;

Tubes having an inner diameter of 65 mm or greater and a wall thickness of 25 mm or greater and a length of 50 mm or greater; or

Blocks having a size of 120 mm × 120 mm × 50 mm or greater;

N.B. See also 0C004.

Pyrolytic or fibrous reinforced graphites, usable for rocket nozzles and reentry vehicle nose tips usable in "missiles", space launch vehicles specified in 9A004 or sounding rockets specified in 9A104;

N.B. See also 0C004.

Ceramic composite materials (dielectric constant less than 6 at any frequency from 100 MHz to 100 GHz) for use in radomes usable in "missiles", space launch vehicles specified in 9A004 or sounding rockets specified in 9A104;

Bulk machinable silicon-carbide reinforced unfired ceramic, usable for nose tips usable in "missiles", space launch vehicles specified in 9A004 or sounding rockets specified in 9A104;

Reinforced silicon-carbide ceramic composites, usable for nose tips, reentry vehicles and nozzle flaps usable in "missiles", space launch vehicles specified in 9A004 or sounding rockets specified in 9A104;

Bulk machinable ceramic composite materials consisting of an ‘Ultra High Temperature Ceramic (UHTC)’ matrix with a melting point equal to or greater than 3 000 °C and reinforced with fibres or filaments, usable for missile components (such as nose-tips, re-entry vehicles, leading edges, jet vanes, control surfaces or rocket motor throat inserts) in "missiles", space launch vehicles specified in 9A004, sounding rockets specified in 9A104 or ‘missiles’.

Note: 1C107.f. does not control ‘Ultra High Temperature Ceramic (UHTC) ’ materials in non-composite form.

Technical Note 1:

In 1C107.f. ‘missile’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

Technical Note 2:

‘Ultra High Temperature Ceramics (UHTC)’ includes:

1. Titanium diboride (TiB₂);

2. Zirconium diboride (ZrB₂);

3. Niobium diboride (NbB₂);

4. Hafnium diboride (HfB₂);

5. Tantalum diboride (TaB₂);

6. Titanium carbide (TiC);

7. Zirconium carbide (ZrC);

8. Niobium carbide (NbC);

9. Hafnium carbide (HfC);

10. Tantalum carbide (TaC).

1C111 Propellants and constituent chemicals for propellants, other than those specified in 1C011, as follows:

Propulsive substances:

Spherical or spheroidal aluminium powder other than that specified in the Military Goods Controls, in particle size of less than 200 μm and an aluminium content of 97 % by weight or more, if at least 10 % of the total weight is made up of particles of less than 63 μm, according to ISO 2591-1:1988 or national equivalents;

Technical Note:

A particle size of 63 μm (ISO R-565) corresponds to 250 mesh (Tyler) or 230 mesh (ASTM standard E-11).

Metal powders, other than that specified in the Military Goods Controls, as follows:

a. Metal powders of zirconium, beryllium or magnesium, or alloys of these metals, if at least 90 % of the total particles by particle volume or weight are made up of particles of less than 60 μm (determined by measurement techniques such as using a sieve, laser diffraction or optical scanning), whether spherical, atomised, spheroidal, flaked or ground, consisting 97 % by weight or more of any of the following:

1. Zirconium;

2. Beryllium; or

3. Magnesium;

Technical Note:

The natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium.

b. Metal powders of either boron or boron alloys with a boron content of 85 % or more by weight, if at least 90 % of the total particles by particle volume or weight are made up of particles of less than 60 μm (determined by measurement techniques such as using a sieve, laser diffraction or optical scanning), whether spherical, atomised, spheroidal, flaked or ground;

Note: 1C111a.2.a. and 1C111a.2.b. controls powder mixtures with a multimodal particle distribution (e.g. mixtures of different grain sizes) if one or more modes are controlled.

Oxidiser substances usable in liquid propellant rocket engines as follows:

a. Dinitrogen trioxide (CAS 10544-73-7);

b. Nitrogen dioxide (CAS 10102-44-0)/dinitrogen tetroxide (CAS 10544-72-6);

c. Dinitrogen pentoxide (CAS 10102-03-1);

d. Mixed Oxides of Nitrogen (MON);

Technical Note:

Mixed Oxides of Nitrogen (MON) are solutions of Nitric Oxide (NO) in Dinitrogen Tetroxide/Nitrogen Dioxide (N₂O₄/NO₂₎ that can be used in missile systems. There are a range of compositions that can be denoted as MONi or MONij, where i and j are integers representing the percentage of Nitric Oxide in the mixture (e.g., MON3 contains 3 % Nitric Oxide, MON25 25 % Nitric Oxide. An upper limit is MON40, 40 % by weight).

e. SEE MILITARY GOODS CONTROLS FOR Inhibited Red Fuming Nitric Acid (IRFNA);

f. SEE MILITARY GOODS CONTROLS AND 1C238 FOR compounds composed of fluorine and one or more of other halogens, oxygen or nitrogen.

Hydrazine derivatives as follows:

N.B. SEE ALSO MILITARY GOODS CONTROLS.

a. Trimethylhydrazine (CAS 1741-01-1);

b. Tetramethylhydrazine (CAS 6415-12-9);

c. N,N-Diallylhydrazine (CAS 5164-11-4);

d. Allylhydrazine (CAS 7422-78-8);

e. Ethylene dihydrazine (CAS 6068-98-0);

f. Monomethylhydrazine dinitrate;

g. Unsymmetrical dimethylhydrazine nitrate;

h. Hydrazinium azide (CAS 14546-44-2);

i. 1,1-Dimethylhydrazinium azide (CAS 227955-52-4)/1,2-Dimethylhydrazinium azide (CAS 299177-50-7);

j. Hydrazinium dinitrate (CAS 13464-98-7);

k. Diimido oxalic acid dihydrazine (CAS 3457-37-2);

l. 2-hydroxyethylhydrazine nitrate (HEHN);

m. See Military Goods Controls for Hydrazinium perchlorate;

n. Hydrazinium diperchlorate (CAS 13812-39-0);

o. Methylhydrazine nitrate (MHN) (CAS 29674-96-2);

p. 1,1-Diethylhydrazine nitrate (DEHN)/1,2-Diethylhydrazine nitrate (DEHN) (CAS 363453-17-2);

q. 3,6-Dihydrazino tetrazine nitrate (1,4-dihydrazine nitrate) (DHTN);

High energy density materials, other than that specified in the Military Goods Controls, usable in ‘missiles’ or unmanned aerial vehicles specified in 9A012 or 9A112.a.;

a. Mixed fuel that incorporate both solid and liquid fuels, such as boron slurry, having a mass-based energy density of 40 × 10⁶ J/kg or greater;

b. Other high energy density fuels and fuel additives (e.g., cubane, ionic solutions, JP-10) having a volume-based energy density of 37,5 × 10⁹ J/m³ or greater, measured at 20 °C and one atmosphere (101,325 kPa) pressure;

Note: 1C111.a.5.b. does not control fossil refined fuels and biofuels produced from vegetables, including fuels for engines certified for use in civil aviation, unless specially formulated for ‘missiles’ or unmanned aerial vehicles specified in 9A012 or 9A112.a..

Technical Note:

In 1C111.a.5. ‘missile’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

Hydrazine replacement fuels as follows:

a. 2-Dimethylaminoethylazide (DMAZ) (CAS 86147-04-8);

Polymeric substances:

Carboxy-terminated polybutadiene (including carboxyl-terminated polybutadiene) (CTPB);

Hydroxy-terminated polybutadiene (including hydroxyl-terminated polybutadiene) (HTPB) (CAS 69102-90-5), other than that specified in the Military Goods Controls;

Polybutadiene-acrylic acid (PBAA);

Polybutadiene-acrylic acid-acrylonitrile (PBAN) (CAS 25265-19-4/CAS 68891-50-9);

Polytetrahydrofuran polyethylene glycol (TPEG);

Technical Note:

Polytetrahydrofuran polyethylene glycol (TPEG) is a block co-polymer of poly 1,4-Butanediol (CAS 110-63-4) and polyethylene glycol (PEG) (CAS 25322-68-3).

SEE MILITARY GOODS CONTROLS FOR polyglycidyl nitrate (PGN or poly-GLYN) (CAS 27814-48-8).

Other propellant additives and agents:

SEE MILITARY GOODS CONTROLS FOR Carboranes, decaboranes, pentaboranes and derivatives thereof;

Triethylene glycol dinitrate (TEGDN) (CAS 111-22-8);

2-Nitrodiphenylamine (CAS 119-75-5);

SEE MILITARY GOODS CONTROLS FOR trimethylolethane trinitrate (TMETN) (CAS 3032-55-1);

Diethylene glycol dinitrate (DEGDN) (CAS 693-21-0);

Ferrocene derivatives as follows:

a. SEE MILITARY GOODS CONTROLS FOR catocene (CAS 37206-42-1);

b. SEE MILITARY GOODS CONTROLS FOR Ethyl ferrocene (CAS 1273-89-8);

c. SEE MILITARY GOODS CONTROLS FOR n-Propyl ferrocene (CAS 1273-92-3)/iso-propyl ferrocene (CAS 12126-81-7);

d. SEE MILITARY GOODS CONTROLS FOR n-butyl ferrocene (CAS 31904-29-7);

e. SEE MILITARY GOODS CONTROLS FOR Pentyl ferrocene (CAS 1274-00-6);

f. SEE MILITARY GOODS CONTROLS FOR Dicyclopentyl ferrocene (CAS 125861-17-8);

g. SEE MILITARY GOODS CONTROLS FOR Dicyclohexyl ferrocene;

h. SEE MILITARY GOODS CONTROLS FOR Diethyl ferrocene (CAS 1273-97-8);

i. SEE MILITARY GOODS CONTROLS FOR Dipropyl ferrocene;

j. SEE MILITARY GOODS CONTROLS FOR Dibutyl ferrocene (CAS 1274-08-4);

k. SEE MILITARY GOODS CONTROLS FOR Dihexyl ferrocene (CAS 93894-59-8);

l. SEE MILITARY GOODS CONTROLS FOR Acetyl ferrocene (CAS 1271-55-2)/1,1'-diacetyl ferrocene (CAS 1273-94-5);

m. SEE MILITARY GOODS CONTROLS FOR Ferrocene carboxylic acid (CAS 1271-42-7)/1,1'-Ferrocenedicarboxylic acid (CAS 1293-87-4);

n. SEE MILITARY GOODS CONTROLS FOR butacene (CAS 125856-62-4);

o. Other ferrocene derivatives usable as rocket propellant burning rate modifiers, other than those specified in the Military Goods Controls.

Note: 1C111.c.6.o. does not control ferrocene derivatives that contain a six carbon aromatic functional group attached to the ferrocene molecule.

4,5-Diazidomethyl-2-methyl-1,2,3-triazole (iso-DAMTR), other than that specified in the Military Goods Controls.

‘Gel propellants’, other than that specified in the Military Goods Controls, specifically formulated for use in ‘missiles’.

Technical Notes:

1. In 1C111.d. a ‘gel propellant’ is a fuel or oxidiser formulation using a gellant such as silicates, kaolin (clay), carbon or any polymeric gellant.

2. In 1C111.d. a ‘missile’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

Note: For propellants and constituent chemicals for propellants not specified in 1C111, see the Military Goods Controls.

1C116 Maraging steels, useable in ‘missiles’, having all of the following:

N.B. SEE ALSO 1C216.

Having an ultimate tensile strength, measured at 293 K (20 °C), equal to or greater than:

0,9 GPa in the solution annealed stage; or

1,5 GPa in the precipitation hardened stage; and

Any of the following forms:

Sheet, plate or tubing with a wall or plate thickness equal to or less than 5,0 mm;

Tubular forms with a wall thickness equal to or less than 50 mm and having an inner diameter equal to or greater than 270 mm.

Technical Note 1:

Maraging steels are iron alloy:

1. Generally characterised by high nickel, very low carbon content and the use of substitutional elements or precipitates to produce strengthening and age-hardening of the alloy; and

2. Subjected to heat treatment cycles to facilitate the martensitic transformation process (solution annealed stage) and subsequently age hardened (precipitation hardened stage).

Technical Note 2:

In 1C116 ‘missile’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

1C117 Materials for the fabrication of ‘missiles’ components as follows:

Tungsten and alloys in particulate form with a tungsten content of 97 % by weight or more and a particle size of 50 × 10⁻⁶ m (50 μm) or less;

Molybdenum and alloys in particulate form with a molybdenum content of 97 % by weight or more and a particle size of 50 × 10⁻⁶m (50 μm) or less;

Tungsten materials in solid form having all of the following:

Any of the following material compositions:

a. Tungsten and alloys containing 97 % by weight or more of tungsten;

b. Copper infiltrated tungsten containing 80 % by weight or more of tungsten; or

c. Silver infiltrated tungsten containing 80 % by weight or more of tungsten; and

Able to be machined to any of the following products:

a. Cylinders having a diameter of 120 mm or greater and a length of 50 mm or greater;

b. Tubes having an inner diameter of 65 mm or greater and a wall thickness of 25 mm or greater and a length of 50 mm or greater; or

c. Blocks having a size of 120 mm by 120 mm by 50 mm or greater.

Technical Note:

In 1C117 ‘missile’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

1C118 Titanium-stabilised duplex stainless steel (Ti-DSS) having all of the following:

Having all of the following characteristics:

Containing 17,0 - 23,0 % by weight of chromium and 4,5 - 7,0 % by weight of nickel;

Having a titanium content of greater than 0,10 % by weight; and

A ferritic-austenitic microstructure (also referred to as a two-phase microstructure) of which at least 10 % by volume (according to ASTM E-1181-87 or national equivalents) is austenite; and

Having any of the following forms:

Ingots or bars having a size of 100 mm or more in each dimension;

Sheets having a width of 600 mm or more and a thickness of 3 mm or less; or

Tubes having an outer diameter of 600 mm or more and a wall thickness of 3 mm or less.

1C202 Alloys, other than those specified in 1C002.b.3. or .b.4., as follows:

Aluminium alloys having both of the following characteristics:

‘Capable of’ an ultimate tensile strength of 460 MPa or more at 293 K (20 °C); and

In the form of tubes or cylindrical solid forms (including forgings) with an outside diameter of more than 75 mm;

Titanium alloys having both of the following characteristics:

‘Capable of’ an ultimate tensile strength of 900 MPa or more at 293 K (20 °C); and

In the form of tubes or cylindrical solid forms (including forgings) with an outside diameter of more than 75 mm.

Technical Note:

The phrase alloys ‘capable of’ encompasses alloys before or after heat treatment.

1C210 ‘Fibrous or filamentary materials’ or prepregs, other than those specified in 1C010.a., .b. or .e., as follows:

Carbon or aramid ‘fibrous or filamentary materials’ having either of the following characteristics:

A "specific modulus" of 12,7 × 10⁶ m or greater; or

A "specific tensile strength" of 23,5 × 10⁴ m or greater;

Note: 1C210.a. does not control aramid ‘fibrous or filamentary materials’ having 0,25 % by weight or more of an ester based fibre surface modifier;

Glass ‘fibrous or filamentary materials’ having both of the following characteristics:

A "specific modulus" of 3,18 × 10⁶ m or greater; and

A "specific tensile strength" of 7,62 × 10⁴ m or greater;

Thermoset resin impregnated continuous "yarns", "rovings", "tows" or "tapes" with a width of 15 mm or less (prepregs), made from carbon or glass ‘fibrous or filamentary materials’ specified in 1C210.a. or .b.

Technical Note:

The resin forms the matrix of the composite.

Note: In 1C210, ‘fibrous or filamentary materials’ is restricted to continuous "monofilaments", "yarns", "rovings", "tows" or "tapes".

1C216 Maraging steel, other than that specified in 1C116, ‘capable of’ an ultimate tensile strength of 1 950 MPa or more, at 293 K (20 °C).

Note: 1C216 does not control forms in which all linear dimensions are 75 mm or less.

Technical Note:

The phrase maraging steel ‘capable of’ encompasses maraging steel before or after heat treatment.

1C225 Boron enriched in the boron-10 (10B) isotope to greater than its natural isotopic abundance, as follows: elemental boron, compounds, mixtures containing boron, manufactures thereof, waste or scrap of any of the foregoing.

Note: In 1C225 mixtures containing boron include boron loaded materials.

Technical Note:

The natural isotopic abundance of boron-10 is approximately 18,5 weight per cent (20 atom per cent).

1C226 Tungsten, tungsten carbide, and alloys containing more than 90 % tungsten by weight, other than that specified in 1C117, having both of the following characteristics:

In forms with a hollow cylindrical symmetry (including cylinder segments) with an inside diameter between 100 mm and 300 mm; and

A mass greater than 20 kg.

Note: 1C226 does not control manufactures specially designed as weights or gamma-ray collimators.

1C227 Calcium having both of the following characteristics:

Containing less than 1 000 ppm by weight of metallic impurities other than magnesium; and

Containing less than 10 ppm by weight of boron.

1C228 Magnesium having both of the following characteristics:

Containing less than 200 ppm by weight of metallic impurities other than calcium; and

Containing less than 10 ppm by weight of boron.

1C229 Bismuth having both of the following characteristics:

A purity of 99,99 % or greater by weight; and

Containing less than 10 ppm by weight of silver.

1C230 Beryllium metal, alloys containing more than 50 % beryllium by weight, beryllium compounds, manufactures thereof, and waste or scrap of any of the foregoing, other than that specified in the Military Goods Controls.

N.B. SEE ALSO MILITARY GOODS CONTROLS.

Note: 1C230 does not control the following:

a. Metal windows for X-ray machines, or for bore-hole logging devices;

b. Oxide shapes in fabricated or semi-fabricated forms specially designed for electronic component parts or as substrates for electronic circuits;

c. Beryl (silicate of beryllium and aluminium) in the form of emeralds or aquamarines.

1C231 Hafnium metal, alloys containing more than 60 % hafnium by weight, hafnium compounds containing more than 60 % hafnium by weight, manufactures thereof, and waste or scrap of any of the foregoing.

1C232 Helium-3 (³He), mixtures containing helium-3, and products or devices containing any of the foregoing.

Note: 1C232 does not control a product or device containing less than 1 g of helium-3.

1C233 Lithium enriched in the lithium-6 (⁶Li) isotope to greater than its natural isotopic abundance, and products or devices containing enriched lithium, as follows: elemental lithium, alloys, compounds, mixtures containing lithium, manufactures thereof, waste or scrap of any of the foregoing.

Note: 1C233 does not control thermoluminescent dosimeters.

Technical Note:

The natural isotopic abundance of lithium-6 is approximately 6,5 weight per cent (7,5 atom per cent).

1C234 Zirconium with a hafnium content of less than 1 part hafnium to 500 parts zirconium by weight, as follows: metal, alloys containing more than 50 % zirconium by weight, compounds, manufactures thereof, waste or scrap of any of the foregoing, other than those specified in 0A001.f.

Note: 1C234 does not control zirconium in the form of foil having a thickness of 0,10 mm or less.

1C235 Tritium, tritium compounds, mixtures containing tritium in which the ratio of tritium to hydrogen atoms exceeds 1 part in 1 000 , and products or devices containing any of the foregoing.

Note: 1C235 does not control a product or device containing less than 1,48 × 10³ GBq (40 Ci) of tritium.

1C236 ‘Radionuclides’ appropriate for making neutron sources based on alpha-n reaction, other than those specified in 0C001 and 1C012.a., in the following forms:

Elemental;

Compounds having a total activity of 37 GBq/kg (1 Ci/kg) or greater;

Mixtures having a total activity of 37 GBq/kg (1 Ci/kg) or greater;

Products or devices containing any of the foregoing.

Note: 1C236 does not control a product or device containing less than 3,7 GBq (100 millicuries) of activity.

Technical Note:

In 1C236 ‘radionuclides’ are any of the following:

— Actinium-225 (²²⁵Ac)

— Actinium-227 (²²⁷Ac)

— Californium-253 (²⁵³Cf)

— Curium-240 (²⁴⁰Cm)

— Curium-241 (²⁴¹Cm)

— Curium-242 (²⁴²Cm)

— Curium-243 (²⁴³Cm)

— Curium-244 (²⁴⁴Cm)

— Einsteinium-253 (²⁵³Es)

— Einsteinium-254 (²⁵⁴Es)

— Gadolinium-148 (¹⁴⁸Gd)

— Plutonium-236 (²³⁶Pu)

— Plutonium-238 (²³⁸Pu)

— Polonium-208 (²⁰⁸Po)

— Polonium-209 (²⁰⁹Po)

— Polonium-210 (²¹⁰Po)

— Radium-223 (²²³Ra)

— Thorium-227 (²²⁷Th)

— Thorium-228 (²²⁸Th)

— Uranium-230 (²³⁰U)

— Uranium-232 (²³²U)

1C237 Radium-226 (²²⁶Ra), radium-226 alloys, radium-226 compounds, mixtures containing radium-226, manufactures thereof, and products or devices containing any of the foregoing.

Note: 1C237 does not control the following:

a. Medical applicators;

b. A product or device containing less than 0,37 GBq (10 millicuries) of radium-226.

1C238 Chlorine trifluoride (ClF₃).

1C239 High explosives, other than those specified in the Military Goods Controls, or substances or mixtures containing more than 2 % by weight thereof, with a crystal density greater than 1,8 g/cm³ and having a detonation velocity greater than 8 000 m/s.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

1C240 Nickel powder and porous nickel metal, other than those specified in 0C005, as follows:

Nickel powder having both of the following characteristics:

A nickel purity content of 99,0 % or greater by weight; and

A mean particle size of less than 10 μm measured by American Society for Testing and Materials (ASTM) B330 standard;

Porous nickel metal produced from materials specified in 1C240.a.

Note: 1C240 does not control the following:

a. Filamentary nickel powders;

b. Single porous nickel sheets with an area of 1 000 cm² per sheet or less.

Technical Note:

1C240.b. refers to porous metal formed by compacting and sintering the materials in 1C240.a. to form a metal material with fine pores interconnected throughout the structure.

1C241 Rhenium, and alloys containing 90 % by weight or more rhenium; and alloys of rhenium and tungsten containing 90 % by weight or more of any combination of rhenium and tungsten, other than those specified in 1C226, having both of the following characteristics:

In forms with a hollow cylindrical symmetry (including cylinder segments) with an inside diameter between 100 and 300 mm; and

A mass greater than 20 kg.

1C350 Chemicals, which may be used as precursors for toxic chemical agents, as follows, and "chemical mixtures" containing one or more thereof:

N.B. SEE ALSO MILITARY GOODS CONTROLS AND 1C450.

Thiodiglycol (CAS 111-48-8);

Phosphorus oxychloride (CAS 10025-87-3);

Dimethyl methylphosphonate (CAS 756-79-6);

SEE MILITARY GOODS CONTROLS for Methyl phosphonyl difluoride (CAS 676-99-3);

Methyl phosphonyl dichloride (CAS 676-97-1);

Dimethyl phosphite (DMP) (CAS 868-85-9);

Phosphorus trichloride (CAS 7719-12-2);

Trimethyl phosphite (TMP) (CAS 121-45-9);

Thionyl chloride (CAS 7719-09-7);

10.

3-Hydroxy-1-methylpiperidine (CAS 3554-74-3);

11.

N,N-Diisopropyl-(beta)-aminoethyl chloride (CAS 96-79-7);

12.

N,N-Diisopropyl-(beta)-aminoethane thiol (CAS 5842-07-9);

13.

3-Quinuclidinol (CAS 1619-34-7);

14.

Potassium fluoride (CAS 7789-23-3);

15.

2-Chloroethanol (CAS 107-07-3);

16.

Dimethylamine (CAS 124-40-3);

17.

Diethyl ethylphosphonate (CAS 78-38-6);

18.

Diethyl N,N-dimethylphosphoramidate (CAS 2404-03-7);

19.

Diethyl phosphite (CAS 762-04-9);

20.

Dimethylamine hydrochloride (CAS 506-59-2);

21.

Ethyl phosphinyl dichloride (CAS 1498-40-4);

22.

Ethyl phosphonyl dichloride (CAS 1066-50-8);

23.

SEE MILITARY GOODS CONTROLS for Ethyl phosphonyl difluoride (CAS 753-98-0);

24.

Hydrogen fluoride (CAS 7664-39-3);

25.

Methyl benzilate (CAS 76-89-1);

26.

Methyl phosphinyl dichloride (CAS 676-83-5);

27.

N,N-Diisopropyl-(beta)-amino ethanol (CAS 96-80-0);

28.

Pinacolyl alcohol (CAS 464-07-3);

29.

SEE MILITARY GOODS CONTROLS for O-Ethyl O-2-diisopropylaminoethyl methylphosphonite (QL) (CAS 57856-11-8);

30.

Triethyl phosphite (CAS 122-52-1);

31.

Arsenic trichloride (CAS 7784-34-1);

32.

Benzilic acid (CAS 76-93-7);

33.

Diethyl methylphosphonite (CAS 15715-41-0);

34.

Dimethyl ethylphosphonate (CAS 6163-75-3);

35.

Ethyl phosphinyl difluoride (CAS 430-78-4);

36.

Methyl phosphinyl difluoride (CAS 753-59-3);

37.

3-Quinuclidone (CAS 3731-38-2);

38.

Phosphorus pentachloride (CAS 10026-13-8);

39.

Pinacolone (CAS 75-97-8);

40.

Potassium cyanide (CAS 151-50-8);

41.

Potassium bifluoride (CAS 7789-29-9);

42.

Ammonium hydrogen fluoride or ammonium bifluoride (CAS 1341-49-7);

43.

Sodium fluoride (CAS 7681-49-4);

44.

Sodium bifluoride (CAS 1333-83-1);

45.

Sodium cyanide (CAS 143-33-9);

46.

Triethanolamine (CAS 102-71-6);

47.

Phosphorus pentasulphide (CAS 1314-80-3);

48.

Di-isopropylamine (CAS 108-18-9);

49.

Diethylaminoethanol (CAS 100-37-8);

50.

Sodium sulphide (CAS 1313-82-2);

51.

Sulphur monochloride (CAS 10025-67-9);

52.

Sulphur dichloride (CAS 10545-99-0);

53.

Triethanolamine hydrochloride (CAS 637-39-8);

54.

N,N-Diisopropyl-(beta)-aminoethyl chloride hydrochloride (CAS 4261-68-1);

55.

Methylphosphonic acid (CAS 993-13-5);

56.

Diethyl methylphosphonate (CAS 683-08-9);

57.

N,N-Dimethylaminophosphoryl dichloride (CAS 677-43-0);

58.

Triisopropyl phosphite (CAS 116-17-6);

59.

Ethyldiethanolamine (CAS 139-87-7);

60.

O,O-Diethyl phosphorothioate (CAS 2465-65-8);

61.

O,O-Diethyl phosphorodithioate (CAS 298-06-6);

62.

Sodium hexafluorosilicate (CAS 16893-85-9);

63.

Methylphosphonothioic dichloride (CAS 676-98-2);

64.

Diethylamine (CAS 109-89-7);

65.

N,N-Diisopropylaminoethanethiol hydrochloride (CAS 41480-75-5);

66.

Methyl dichlorophosphate (CAS 677-24-7);

67.

Ethyl dichlorophosphate (CAS 1498-51-7);

68.

Methyl difluorophosphate (CAS 22382-13-4);

69.

Ethyl difluorophosphate (CAS 460-52-6);

70.

Diethyl chlorophosphite (CAS 589-57-1);

71.

Methyl chlorofluorophosphate (CAS 754-01-8);

72.

Ethyl chlorofluorophosphate (CAS 762-77-6);

73.

N,N-Dimethylformamidine (CAS 44205-42-7);

74.

N,N-Diethylformamidine (CAS 90324-67-7);

75.

N,N-Dipropylformamidine (CAS 48044-20-8);

76.

N,N-Diisopropylformamidine (CAS 857522-08-8);

77.

N,N-Dimethylacetamidine (CAS 2909-14-0);

78.

N,N-Diethylacetamidine (CAS 14277-06-6);

79.

N,N-Dipropylacetamidine (CAS 1339586-99-0);

80.

N,N-Dimethylpropanamidine (CAS 56776-14-8);

81.

N,N-Diethylpropanamidine (CAS 84764-73-8);

82.

N,N-Dipropylpropanamidine (CAS 1341496-89-6);

83.

N,N-Dimethylbutanamidine (CAS 1340437-35-5);

84.

N,N-Diethylbutanamidine (CAS 53510-30-8);

85.

N,N-Dipropylbutanamidine (CAS 1342422-35-8);

86.

N,N-Diisopropylbutanamidine (CAS 1315467-17-4);

87.

N,N-Dimethylisobutanamidine (CAS 321881-25-8);

88.

N,N-Diethylisobutanamidine (CAS 1342789-47-2);

89.

N,N-Dipropylisobutanamidine (CAS 1342700-45-1).

Note 1: For exports to "States not Party to the Chemical Weapons Convention", 1C350 does not control "chemical mixtures" containing one or more of the chemicals specified in entries 1C350.1, .3, .5, .11, .12, .13, .17, .18, .21, .22, .26, .27, .28, .31, .32, .33, .34, .35, .36, .54, .55, .56, .57, .63 and .65 in which no individually specified chemical constitutes more than 10 % by the weight of the mixture.

Note 2: For exports to "States Party to the Chemical Weapons Convention", 1C350 does not control "chemical mixtures" containing one or more of the chemicals specified in entries 1C350.1, .3, .5, .11, .12, .13, .17, .18, .21, .22, .26, .27, .28, .31, .32, .33, .34, .35, .36, .54, .55, .56, .57, .63 and .65 in which no individually specified chemical constitutes more than 30 % by the weight of the mixture.

Note 3: 1C350 does not control "chemical mixtures" containing one or more of the chemicals specified in entries 1C350.2, .6, .7, .8, .9, .10, .14, .15, .16, .19, .20, .24, .25, .30, .37, .38, .39, .40, .41, .42, .43, .44, .45, .46, .47, .48, .49, .50, .51, .52, .53, .58, .59, .60, .61, .62, .64, .66, .67, .68, .69, .70, .71, .72, .73, .74, .75, .76, .77, .78, .79, .80, .81, .82, .83, .84, .85, .86, .87, .88 and .89 in which no individually specified chemical constitutes more than 30 % by the weight of the mixture.

Note 4: 1C350 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use.

1C351 Human and animal pathogens and "toxins", as follows:

Viruses, whether natural, enhanced or modified, either in the form of "isolated live cultures" or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

African horse sickness virus;

African swine fever virus;

Andes virus;

Avian influenza virus, which are:

a. Uncharacterised; or

b. Defined in Annex I(2) EC Directive 2005/94/EC (OJ L 10, 14.1.2006 p. 16) as having high pathogenicity, as follows:

1. Type A viruses with an IVPI (intravenous pathogenicity index) in 6 week old chickens of greater than 1,2; or

2. Type A viruses of the subtypes H5 or H7 with genome sequences codified for multiple basic amino acids at the cleavage site of the haemagglutinin molecule similar to that observed for other HPAI viruses, indicating that the haemagglutinin molecule can be cleaved by a host ubiquitous protease;

Bluetongue virus;

Chapare virus;

Chikungunya virus;

Choclo virus;

Crimean-Congo hemorrhagic fever virus;

10.

Not used;

11.

Dobrava-Belgrade virus;

12.

Eastern equine encephalitis virus;

13.

Ebolavirus: all members of the Ebolavirus genus;

14.

Foot-and-mouth disease virus;

15.

Goatpox virus;

16.

Guanarito virus;

17.

Hantaan virus;

18.

Hendra virus (Equine morbillivirus);

19.

Suid herpesvirus 1 (Pseudorabies virus; Aujeszky's disease);

20.

Classical swine fever virus (Hog cholera virus);

21.

Japanese encephalitis virus;

22.

Junin virus;

23.

Kyasanur Forest disease virus;

24.

Laguna Negra virus;

25.

Lassa virus;

26.

Louping ill virus;

27.

Lujo virus;

28.

Lumpy skin disease virus;

29.

Lymphocytic choriomeningitis virus;

30.

Machupo virus;

31.

Marburgvirus: all members of the Marburgvirus genus;

32.

Monkeypox virus;

33.

Murray Valley encephalitis virus;

34.

Newcastle disease virus;

35.

Nipah virus;

36.

Omsk hemorrhagic fever virus;

37.

Oropouche virus;

38.

Peste-des-petits-ruminants virus;

39.

Swine vesicular disease virus;

40.

Powassan virus;

41.

Rabies virus and all other members of the Lyssavirus genus;

42.

Rift Valley fever virus;

43.

Rinderpest virus;

44.

Rocio virus;

45.

Sabia virus;

46.

Seoul virus;

47.

Sheeppox virus;

48.

Sin Nombre virus;

49.

St. Louis encephalitis virus;

50.

Porcine Teschovirus;

51.

Tick-borne encephalitis virus (Far Eastern subtype);

52.

Variola virus;

53.

Venezuelan equine encephalitis virus;

54.

Vesicular stomatitis virus;

55.

Western equine encephalitis virus;

56.

Yellow fever virus;

57.

Severe acute respiratory syndrome-related coronavirus (SARS-related coronavirus);

58.

Reconstructed 1918 influenza virus;

59.

Middle East respiratory syndrome-related coronavirus (MERS-related coronavirus);

Not used;

Bacteria, whether natural, enhanced or modified, either in the form of "isolated live cultures" or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

Bacillus anthracis;

Brucella abortus;

Brucella melitensis;

Brucella suis;

Burkholderia mallei (Pseudomonas mallei);

Burkholderia pseudomallei (Pseudomonas pseudomallei);

Chlamydia psittaci (Chlamydophila psittaci);

Clostridium argentinense (formerly known as Clostridium botulinum Type G), botulinum neurotoxin producing strains;

Clostridium baratii, botulinum neurotoxin producing strains;

10.

Clostridium botulinum;

11.

Clostridium butyricum, botulinum neurotoxin producing strains;

12.

Clostridium perfringens epsilon toxin producing types;

13.

Coxiella burnetii;

14.

Francisella tularensis;

15.

Mycoplasma capricolum subspecies capripneumoniae (strain F38);

16.

Mycoplasma mycoides subspecies mycoides SC (small colony);

17.

Rickettsia prowazekii;

18.

Salmonella enterica subspecies enterica serovar Typhi (Salmonella typhi);

19.

Shiga toxin producing Escherichia coli (STEC) of serogroups O26, O45, O103, O104, O111, O121, O145, O157, and other shiga toxin producing serogroups;

Note: Shiga toxin producing Escherichia coli (STEC) includes inter alia enterohaemorrhagic E. coli (EHEC), verotoxin producing E. coli (VTEC) or verocytotoxin producing E. coli (VTEC).

20.

Shigella dysenteriae;

21.

Vibrio cholerae;

22.

Yersinia pestis;

"Toxins", as follows, and "sub-unit of toxins" thereof:

Botulinum toxins;

Clostridium perfringens alpha, beta 1, beta 2, epsilon and iota toxins;

Conotoxins;

Ricin;

Saxitoxin;

Shiga toxins (shiga-like toxins, verotoxins and verocytotoxins)

Staphylococcus aureus enterotoxins, hemolysin alpha toxin, and toxic shock syndrome toxin (formerly known as Staphylococcus enterotoxin F);

Tetrodotoxin;

Not used;

10.

Microcystins (Cyanginosins);

11.

Aflatoxins;

12.

Abrin;

13.

Cholera toxin;

14.

Diacetoxyscirpenol;

15.

T-2 toxin;

16.

HT-2 toxin;

17.

Modeccin;

18.

Volkensin;

19.

Viscumin (Viscum Album Lectin 1);

Note: 1C351.d. does not control botulinum toxins or conotoxins in product form meeting all of the following criteria:

1. Are pharmaceutical formulations designed for human administration in the treatment of medical conditions;

2. Are pre-packaged for distribution as medical products;

3. Are authorised by a state authority to be marketed as medical products.

Fungi, whether natural, enhanced or modified, either in the form of "isolated live cultures" or as material including living material which has been deliberately inoculated or contaminated with such cultures, as follows:

Coccidioides immitis;

Coccidioides posadasii.

Note: 1C351 does not control "vaccines" or "immunotoxins".

1C353 ‘Genetic elements’ and ‘genetically-modified organisms’, as follows:

Any ‘genetically-modified organism’ which contains, or ‘genetic element’ that codes for, any of the following:

Any gene or genes specific to any virus specified in 1C351.a. or 1C354.a.;

Any gene or genes specific to any bacterium specified in 1C351.c. or 1C354.b. or fungus specified in 1C351.e. or 1C354.c., and which is any of the following:

a. In itself or through its transcribed or translated products represents a significant hazard to human, animal or plant health; or

b. Could ‘endow or enhance pathogenicity’; or

Any "toxins" specified in 1C351.d. or "sub-units of toxins" therefor;

Not used.

Technical Notes:

1. ‘Genetically-modified organisms’ include organisms in which the nucleic acid sequences have been created or altered by deliberate molecular manipulation.

2. ‘Genetic elements’ include inter alia chromosomes, genomes, plasmids, transposons, vectors and inactivated organisms containing recoverable nucleic acid fragments, whether genetically modified or unmodified, or chemically synthesised in whole or in part. For the purposes of the genetic elements control, nucleic acids from an inactivated organism, virus, or sample are considered recoverable if the inactivation and preparation of the material is intended or known to facilitate isolation, purification, amplification, detection, or identification of nucleic acids.

3. ‘Endow or enhance pathogenicity’ is defined as when the insertion or integration of the nucleic acid sequence or sequences is/are likely to enable or increase a recipient organism’s ability to be used to deliberately cause disease or death. This might include alterations to, inter alia: virulence, transmissibility, stability, route of infection, host range, reproducibility, ability to evade or suppress host immunity, resistance to medical countermeasures, or detectability.

Note 1: 1C353 does not control nucleic acid sequences of shiga toxin producing Escherichia coli of serogroups O26, O45, O103, O104, O111, O121, O145, O157, and other shiga toxin producing serogroups, other than those genetic elements coding for shiga toxin, or for its subunits.

Note 2: 1C353 does not control "vaccines".

1C354 Plant pathogens, as follows:

Andean potato latent virus (Potato Andean latent tymovirus);

Potato spindle tuber viroid;

Bacteria, whether natural, enhanced or modified, either in the form of "isolated live cultures" or as material which has been deliberately inoculated or contaminated with such cultures, as follows:

Xanthomonas albilineans;

Xanthomonas axonopodis pv. citri (Xanthomonas campestris pv. citri A) [Xanthomonas campestris pv. citri];

Xanthomonas oryzae pv. oryzae (Pseudomonas campestris pv. oryzae);

Clavibacter michiganensis subsp. sepedonicus (Corynebacterium michiganensis subsp. sepedonicum or Corynebacterium sepedonicum);

Ralstonia solanacearum, race 3, biovar 2;

Fungi, whether natural, enhanced or modified, either in the form of "isolated live cultures" or as material which has been deliberately inoculated or contaminated with such cultures, as follows:

Colletotrichum kahawae (Colletotrichum coffeanum var. virulans);

Cochliobolus miyabeanus (Helminthosporium oryzae);

Microcyclus ulei (syn. Dothidella ulei);

Puccinia graminis ssp. graminis var. graminis/Puccinia graminis ssp. graminis var. stakmanii (Puccinia graminis [syn. Puccinia graminis f. sp. tritici]);

Puccinia striiformis (syn. Puccinia glumarum);

Magnaporthe oryzae (Pyricularia oryzae);

Peronosclerospora philippinensis (Peronosclerospora sacchari);

Sclerophthora rayssiae var. zeae;

Synchytrium endobioticium;

10.

Tilletia indica;

11.

Thecaphora solani.

1C450 Toxic chemicals and toxic chemical precursors, as follows, and "chemical mixtures" containing one or more thereof:

N.B. SEE ALSO ENTRY 1C350, 1C351.d. AND MILITARY GOODS CONTROLS.

Toxic chemicals, as follows:

Amiton: O,O-Diethyl S-[2-(diethylamino)ethyl] phosphorothiolate (CAS 78-53-5) and corresponding alkylated or protonated salts;

PFIB: 1,1,3,3,3-Pentafluoro-2-(trifluoromethyl)-1-propene (CAS 382-21-8);

SEE MILITARY GOODS CONTROLS FOR BZ: 3-Quinuclidinyl benzilate (CAS 6581-06-2);

Phosgene: Carbonyl dichloride (CAS 75-44-5);

Cyanogen chloride (CAS 506-77-4);

Hydrogen cyanide (CAS 74-90-8);

Chloropicrin: Trichloronitromethane (CAS 76-06-2);

Note 1: For exports to "States not Party to the Chemical Weapons Convention", 1C450 does not control "chemical mixtures" containing one or more of the chemicals specified in entries 1C450.a.1. and .a.2. in which no individually specified chemical constitutes more than 1 % by the weight of the mixture.

Note 2: For exports to "States Party to the Chemical Weapons Convention", 1C450 does not control "chemical mixtures" containing one or more of the chemicals specified in entries 1C450.a.1. and .a.2. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture.

Note 3: 1C450 does not control "chemical mixtures" containing one or more of the chemicals specified in entries 1C450.a.4., .a.5., .a.6. and .a.7. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture.

Note 4: 1C450 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use.

Toxic chemical precursors, as follows:

Chemicals, other than those specified in the Military Goods Controls or in 1C350, containing a phosphorus atom to which is bonded one methyl, ethyl or propyl (normal or iso) group but not further carbon atoms;

Note: 1C450.b.1. does not control Fonofos: O-Ethyl S-phenyl ethylphosphonothiolothionate (CAS 944-22-9);

N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] phosphoramidic dihalides, other than N,N-Dimethylaminophosphoryl dichloride;

N.B. See 1C350.57. for N,N-Dimethylaminophosphoryl dichloride.

Dialkyl [methyl, ethyl or propyl (normal or iso)] N,N-dialkyl [methyl, ethyl or propyl (normal or iso)]-phosphoramidates, other than Diethyl-N,N-dimethylphosphoramidate which is specified in 1C350;

N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethyl-2-chlorides and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethyl chloride or N,N-Diisopropyl-(beta)-aminoethyl chloride hydrochloride which are specified in 1C350;

N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethane-2-ols and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethanol (CAS 96-80-0) and N,N-Diethylaminoethanol (CAS 100-37-8) which are specified in 1C350;

Note: 1C450.b.5. does not control the following:

a. N,N-Dimethylaminoethanol (CAS 108-01-0) and corresponding protonated salts;

b. Protonated salts of N,N-Diethylaminoethanol (CAS 100-37-8);

N,N-Dialkyl [methyl, ethyl or propyl (normal or iso)] aminoethane-2-thiols and corresponding protonated salts, other than N,N-Diisopropyl-(beta)-aminoethane thiol (CAS 5842-07-9) and N,N-Diisopropylaminoethanethiol hydrochloride (CAS 41480-75-5) which are specified in 1C350;

See 1C350 for ethyldiethanolamine (CAS 139-87-7);

Methyldiethanolamine (CAS 105-59-9).

Note 1: For exports to "States not Party to the Chemical Weapons Convention", 1C450 does not control "chemical mixtures" containing one or more of the chemicals specified in entries 1C450.b.1., .b.2., .b.3., .b.4., .b.5. and .b.6. in which no individually specified chemical constitutes more than 10 % by the weight of the mixture.

Note 2: For exports to "States Party to the Chemical Weapons Convention", 1C450 does not control "chemical mixtures" containing one or more of the chemicals specified in entries 1C450.b.1., .b.2., .b.3., .b.4., .b.5. and .b.6. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture.

Note 3: 1C450 does not control "chemical mixtures" containing one or more of the chemicals specified in entry 1C450.b.8. in which no individually specified chemical constitutes more than 30 % by the weight of the mixture.

Note 4: 1C450 does not control products identified as consumer goods packaged for retail sale for personal use or packaged for individual use.

1D Software

1D001 "Software" specially designed or modified for the "development", "production" or "use" of equipment specified in 1B001 to 1B003.

1D002 "Software" for the "development" of organic "matrix", metal "matrix" or carbon "matrix" laminates or "composites".

1D003 "Software" specially designed or modified to enable equipment to perform the functions of equipment specified in 1A004.c. or 1A004.d.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

1D101 "Software" specially designed or modified for the operation or maintenance of goods specified in 1B101, 1B102, 1B115, 1B117, 1B118 or 1B119.

1D103 "Software" specially designed for analysis of reduced observables such as radar reflectivity, ultraviolet/infrared signatures and acoustic signatures.

1D201 "Software" specially designed for the "use" of goods specified in 1B201.

1E Technology

1E001 "Technology" according to the General Technology Note for the "development" or "production" of equipment or materials specified in 1A002 to 1A005, 1A006.b., 1A007, 1B or 1C.

1E002 Other "technology" as follows:

"Technology" for the "development" or "production" of polybenzothiazoles or polybenzoxazoles;

"Technology" for the "development" or "production" of fluoroelastomer compounds containing at least one vinylether monomer;

"Technology" for the design or "production" of the following ceramic powders or non-"composite" ceramic materials:

Ceramic powders having all of the following:

a. Any of the following compositions:

1. Single or complex oxides of zirconium and complex oxides of silicon or aluminium;

2. Single nitrides of boron (cubic crystalline forms);

3. Single or complex carbides of silicon or boron; or

4. Single or complex nitrides of silicon;

b. Any of the following total metallic impurities (excluding intentional additions):

1. Less than 1 000 ppm for single oxides or carbides; or

2. Less than 5 000 ppm for complex compounds or single nitrides; and

c. Being any of the following:

1. Zirconia (CAS 1314-23-4) with an average particle size equal to or less than 1 μm and no more than 10 % of the particles larger than 5 μm; or

2. Other ceramic powders with an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm;

Non-"composite" ceramic materials composed of the materials specified in 1E002.c.1.;

Note: 1E002.c.2. does not control "technology" for abrasives.

Not used;

"Technology" for the installation, maintenance or repair of materials specified in 1C001;

"Technology" for the repair of "composite" structures, laminates or materials specified in 1A002 or 1C007.c.;

Note: 1E002.f. does not control "technology" for the repair of "civil aircraft" structures using carbon "fibrous or filamentary materials" and epoxy resins, contained in "aircraft" manufacturers' manuals.

"Libraries" specially designed or modified to enable equipment to perform the functions of equipment specified in 1A004.c. or 1A004.d.

1E101 "Technology" according to the General Technology Note for the "use" of goods specified in 1A102, 1B001, 1B101, 1B102, 1B115 to 1B119, 1C001, 1C101, 1C107, 1C111 to 1C118, 1D101 or 1D103.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

1E102 "Technology" according to the General Technology Note for the "development" of "software" specified in 1D001, 1D101 or 1D103.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

1E103 "Technology" for the regulation of temperature, pressure or atmosphere in autoclaves or hydroclaves, when used for the "production" of "composites" or partially processed "composites".

1E104 "Technology" for the "production" of pyrolytically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1 573 K (1 300 °C) to 3 173 K (2 900 °C) temperature range at pressures of 130 Pa to 20 kPa.

Note: 1E104 includes "technology" for the composition of precursor gases, flow-rates and process control schedules and parameters.

1E201 "Technology" according to the General Technology Note for the "use" of goods specified in 1A002, 1A007, 1A202, 1A225 to 1A227, 1B201, 1B225 to 1B234, 1C002.b.3. or .b.4., 1C010.b., 1C202, 1C210, 1C216, 1C225 to 1C241 or 1D201.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

1E202 "Technology" according to the General Technology Note for the "development" or "production" of goods specified in 1A007, 1A202 or 1A225 to 1A227.

1E203 "Technology" according to the General Technology Note for the "development" of "software" specified in 1D201.

Category 2 - MATERIALS PROCESSING

2A Systems, Equipment and Components

N.B. For quiet running bearings, see the Military Goods Controls.

2A001 Anti-friction bearings, bearing systems and components, as follows:

N.B. SEE ALSO 2A101.

Ball bearings and solid roller bearings, having all tolerances specified by the manufacturer in accordance with ISO 492 Tolerance Class 4 or Class 2 (or national equivalents), or better, and having both ‘rings’ and ‘rolling elements’, made from monel or beryllium;

Note: 2A001.a. does not control tapered roller bearings.

Technical Notes:

1. ‘Ring’ - annular part of a radial rolling bearing incorporating one or more raceways (ISO 5593:1997).

2. ‘Rolling element’ - ball or roller which rolls between raceways (ISO 5593:1997).

Not used;

Active magnetic bearing systems using any of the following, and specially designed components therefor:

Materials with flux densities of 2,0 T or greater and yield strengths greater than 414 MPa;

All-electromagnetic 3D homopolar bias designs for actuators; or

High temperature (450 K (177 °C) and above) position sensors.

2A101 Radial ball bearings, other than those specified in 2A001, having all tolerances specified in accordance with ISO 492 Tolerance Class 2 (or ANSI/ABMA Std 20 Tolerance Class ABEC-9 or other national equivalents), or better and having all of the following characteristics:

An inner ring bore diameter between 12 mm and 50 mm;

An outer ring outside diameter between 25 mm and 100 mm; and

A width between 10 mm and 20 mm.

2A225 Crucibles made of materials resistant to liquid actinide metals, as follows:

Crucibles having both of the following characteristics:

A volume of between 150 cm³ and 8 000 cm³; and

Made of or coated with any of the following materials, or combination of the following materials, having an overall impurity level of 2 % or less by weight:

a. Calcium fluoride (CaF₂);

b. Calcium zirconate (metazirconate) (CaZrO₃);

c. Cerium sulphide (Ce₂S₃);

d. Erbium oxide (erbia) (Er₂O₃);

e. Hafnium oxide (hafnia) (HfO₂);

f. Magnesium oxide (MgO);

g. Nitrided niobium-titanium-tungsten alloy (approximately 50 % Nb, 30 % Ti, 20 % W);

h. Yttrium oxide (yttria) (Y₂O₃); or

i. Zirconium oxide (zirconia) (ZrO₂);

Crucibles having both of the following characteristics:

A volume of between 50 cm³ and 2 000 cm³; and

Made of or lined with tantalum, having a purity of 99,9 % or greater by weight;

Crucibles having all of the following characteristics:

A volume of between 50 cm³ and 2 000 cm³;

Made of or lined with tantalum, having a purity of 98 % or greater by weight; and

Coated with tantalum carbide, nitride, boride, or any combination thereof.

2A226 Valves having all of the following characteristics:

A ‘nominal size’ of 5 mm or greater;

Having a bellows seal; and

Wholly made of or lined with aluminium, aluminium alloy, nickel, or nickel alloy containing more than 60 % nickel by weight.

Technical Note:

For valves with different inlet and outlet diameters, the ‘nominal size’ in 2A226 refers to the smallest diameter.

2B Test, Inspection and Production Equipment

Technical Notes:

1. Secondary parallel contouring axes, (e.g., the w-axis on horizontal boring mills or a secondary rotary axis the centre line of which is parallel to the primary rotary axis) are not counted in the total number of contouring axes. Rotary axes need not rotate over 360o. A rotary axis can be driven by a linear device (e.g., a screw or a rack-and-pinion).

2. For the purposes of 2B, the number of axes which can be co-ordinated simultaneously for "contouring control" is the number of axes along or around which, during processing of the workpiece, simultaneous and interrelated motions are performed between the workpiece and a tool. This does not include any additional axes along or around which other relative movement within the machine are performed such as:

a. Wheel-dressing systems in grinding machines;

b. Parallel rotary axes designed for mounting of separate workpieces;

c. Co-linear rotary axes designed for manipulating the same workpiece by holding it in a chuck from different ends.

3. Axis nomenclature shall be in accordance with International Standard ISO 841:2001, Industrial automation systems and integration - Numerical control of machines - Coordinate system and motion nomenclature.

4. For the purposes of 2B001 to 2B009 a "tilting spindle" is counted as a rotary axis.

5. ‘Stated "unidirectional positioning repeatability"’ may be used for each machine tool model as an alternative to individual machine tests and is determined as follows:

a. Select five machines of a model to be evaluated;

b. Measure the linear axis repeatability (R↑,R↓) according to ISO 230-2:2014 and evaluate "unidirectional positioning repeatability" for each axis of each of the five machines;

c. Determine the arithmetic mean value of the "unidirectional positioning repeatability"-values for each axis of all five machines together. These arithmetic mean values of "unidirectional positioning repeatability" (

) become the stated value of each axis for the model (
,
…);

d. Since the Category 2 list refers to each linear axis there will be as many 'stated "unidirectional positioning repeatability" values as there are linear axes;

e. If any axis of a machine model not specified in 2B001.a. to 2B001.c. has a 'stated "unidirectional positioning repeatability" equal to or less than the specified "unidirectional positioning repeatability" of each machine tool model plus 0,7 μm, the builder should be required to reaffirm the accuracy level once every eighteen months.

6. For the purposes of 2B001.a. to 2B001.c., measurement uncertainty for the "unidirectional positioning repeatability" of machine tools, as defined in the International Standard ISO 230-2:2014 or national equivalents, shall not be considered.

7. For the purpose of 2B001.a. to 2B001.c., the measurement of axes shall be made according to test procedures in 5.3.2. of ISO 230-2:2014. Tests for axes longer than 2 meters shall be made over 2 m segments. Axes longer than 4 m require multiple tests (e.g., two tests for axes longer than 4 m and up to 8 m, three tests for axes longer than 8 m and up to 12 m), each over 2 m segments and distributed in equal intervals over the axis length. Test segments are equally spaced along the full axis length, with any excess length equally divided at the beginning, in between, and at the end of the test segments. The smallest "unidirectional positioning repeatability"-value of all test segments is to be reported.

2B001 Machine tools and any combination thereof, for removing (or cutting) metals, ceramics or "composites", which, according to the manufacturer’s technical specification, can be equipped with electronic devices for "numerical control", as follows:

N.B. SEE ALSO 2B201.

Note 1: 2B001 does not control special purpose machine tools limited to the manufacture of gears. For such machines see 2B003.

Note 2: 2B001 does not control special purpose machine tools limited to the manufacture of any of the following:

a. Crankshafts or camshafts;

b. Tools or cutters;

c. Extruder worms;

d. Engraved or facetted jewellery parts; or

e. Dental prostheses.

Note 3: A machine tool having at least two of the three turning, milling or grinding capabilities (e.g., a turning machine with milling capability), must be evaluated against each applicable entry 2B001.a., b. or c.

Note 4: A machine tool having an additive manufacturing capability in addition to a turning, milling or grinding capability must be evaluated against each applicable entry 2B001.a., .b. or .c.

N.B. For optical finishing machines, see 2B002.

Machine tools for turning having two or more axes which can be coordinated simultaneously for "contouring control" having any of the following:

"Unidirectional positioning repeatability" equal to or less (better) than 0,9 μm along one or more linear axis with a travel length less than 1,0 m; or

"Unidirectional positioning repeatability" equal to or less (better) than 1,1 μm along one or more linear axis with a travel length equal to or greater than 1,0 m;

Note 1: 2B001.a. does not control turning machines specially designed for producing contact lenses, having all of the following:

a. Machine controller limited to using ophthalmic based software for part programming data input; and

b. No vacuum chucking.

Note 2: 2B001.a. does not control bar machines (Swissturn), limited to machining only bar feed thru, if maximum bar diameter is equal to or less than 42 mm and there is no capability of mounting chucks. Machines may have drilling or milling capabilities for machining parts with diameters less than 42 mm.

Machine tools for milling having any of the following:

Three linear axes plus one rotary axis which can be coordinated simultaneously for "contouring control" having any of the following:

a. "Unidirectional positioning repeatability" equal to or less (better) than 0,9 μm along one or more linear axis with a travel length less than 1,0 m; or

b. "Unidirectional positioning repeatability" equal to or less (better) than 1,1 μm along one or more linear axis with a travel length equal to or greater than 1,0 m;

Five or more axes which can be coordinated simultaneously for "contouring control" having any of the following;

a. "Unidirectional positioning repeatability" equal to or less (better) than 0,9 μm along one or more linear axis with a travel length less than 1,0 m;

b. "Unidirectional positioning repeatability" equal to or less (better) than 1,4 μm along one or more linear axis with a travel length equal to or greater than 1 m and less than 4 m; or

c. "Unidirectional positioning repeatability" equal to or less (better) than 6,0 μm (along one or more linear axis with a travel length equal to or greater than 4 m;

A "unidirectional positioning repeatability" for jig boring machines, equal to or less (better) than 1,1 μm along one or more linear axis; or

Fly cutting machines having all of the following:

a. Spindle "run-out" and "camming" less (better) than 0,0004 mm TIR; and

b. Angular deviation of slide movement (yaw, pitch and roll) less (better) than 2 seconds of arc, TIR over 300 mm of travel;

Machine tools for grinding having any of the following:

Having all of the following:

a. "Unidirectional positioning repeatability" equal to or less (better) than 1,1 μm along one or more linear axis; and

b. Three or four axes which can be coordinated simultaneously for "contouring control"; or

Five or more axes which can be coordinated simultaneously for "contouring control" having any of the following:

a. "Unidirectional positioning repeatability" equal to or less (better) than 1,1 μm along one or more linear axis with a travel length less than 1 m;

b. "Unidirectional positioning repeatability" equal to or less (better) than 1,4 μm along one or more linear axis with a travel length equal to or greater than 1 m and less than 4 m; or

c. "Unidirectional positioning repeatability" equal to or less (better) than 6,0 μm along one or more linear axis with a travel length equal to or greater than 4 m.

Note: 2B001.c. does not control grinding machine as follows:

a. Cylindrical external, internal, and external-internal grinding machines, having all of the following:

1. Limited to cylindrical grinding; and

2. Limited to a maximum workpiece capacity of 150 mm outside diameter or length.

b. Machines designed specifically as jig grinders that do not have a z-axis or a w-axis, with a "unidirectional positioning repeatability" less (better) than 1,1 μm

c. Surface grinders.

Electrical discharge machines (EDM) of the non-wire type which have two or more rotary axes which can be coordinated simultaneously for "contouring control";

Machine tools for removing metals, ceramics or "composites", having all of the following:

Removing material by means of any of the following:

a. Water or other liquid jets, including those employing abrasive additives;

b. Electron beam; or

c. "Laser" beam; and

At least two rotary axes having all of the following:

a. Can be coordinated simultaneously for "contouring control"; and

b. A positioning "accuracy" of less (better) than 0,003⁰;

Deep-hole-drilling machines and turning machines modified for deep-hole-drilling, having a maximum depth-of-bore capability exceeding 5 m.

2B002 Numerically controlled optical finishing machine tools equipped for selective material removal to produce non-spherical optical surfaces having all of the following characteristics:

Finishing the form to less (better) than 1,0 μm;

Finishing to a roughness less (better) than 100 nm rms.

Four or more axes which can be coordinated simultaneously for "contouring control"; and

Using any of the following processes:

Magnetorheological finishing (‘MRF’);

Electrorheological finishing (‘ERF’);

‘Energetic particle beam finishing’;

‘Inflatable membrane tool finishing’; or

‘Fluid jet finishing’

Technical Notes:

For the purposes of 2B002:

1. ‘MRF’ is a material removal process using an abrasive magnetic fluid whose viscosity is controlled by a magnetic field.

2. ‘ERF’ is a removal process using an abrasive fluid whose viscosity is controlled by an electric field.

3. ‘Energetic particle beam finishing’ uses Reactive Atom Plasmas (RAP) or ion-beams to selectively remove material.

4. ‘Inflatable membrane tool finishing’ is a process that uses a pressurized membrane that deforms to contact the workpiece over a small area.

5. ‘Fluid jet finishing’ makes use of a fluid stream for material removal.

2B003 "Numerically controlled" machine tools, specially designed for the shaving, finishing, grinding or honing of hardened (Rc=40 or more) spur, helical and double-helical gears having all of the following:

A pitch diameter exceeding 1 250 mm;

A face width of 15 % of pitch diameter or larger; and

A finished quality of AGMA 14 or better (equivalent to ISO 1328 class 3).

2B004 Hot "isostatic presses" having all of the following, and specially designed components and accessories therefor:

N.B. SEE ALSO 2B104 and 2B204

A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and

Having any of the following:

A maximum working pressure exceeding 207 MPa;

A controlled thermal environment exceeding 1 773 K (1 500 °C); or

A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.

Technical Note:

The inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other.

N.B. For specially designed dies, moulds and tooling see 1B003, 9B009 and the Military Goods Controls.

2B005 Equipment specially designed for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, as follows, for substrates specified in column 2, by processes shown in column 1 in the Table following 2E003.f., and specially designed automated handling, positioning, manipulation and control components therefor:

Chemical vapour deposition (CVD) production equipment having all of the following:

N.B. SEE ALSO 2B105.

A process modified for one of the following:

a. Pulsating CVD;

b. Controlled nucleation thermal deposition (CNTD); or

c. Plasma enhanced or plasma assisted CVD; and

Having any of the following:

a. Incorporating high vacuum (equal to or less than 0,01 Pa) rotating seals; or

b. Incorporating in situ coating thickness control;

Ion implantation production equipment having beam currents of 5 mA or more;

Electron beam physical vapour deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having any of the following:

A liquid pool level "laser" control system which regulates precisely the ingots feed rate; or

A computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;

Plasma spraying production equipment having any of the following:

Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or

Incorporating in situ coating thickness control;

Sputter deposition production equipment capable of current densities of 0,1 mA/mm² or higher at a deposition rate of 15 μm/h or more;

Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode;

Ion plating production equipment capable of the in situ measurement of any of the following:

Coating thickness on the substrate and rate control; or

Optical characteristics.

Note: 2B005 does not control chemical vapour deposition, cathodic arc, sputter deposition, ion plating or ion implantation equipment, specially designed for cutting or machining tools.

2B006 Dimensional inspection or measuring systems, equipment, position feedback units and "electronic assemblies", as follows:

Computer controlled or "numerical controlled" Coordinate Measuring Machines (CMM), having a three dimensional (volumetric) maximum permissible error of length measurement (E₀,ₘₚₑ) at any point within the operating range of the machine (i.e., within the length of axes) equal to or less (better) than (1,7 + L/1 000) μm (L is the measured length in mm), according to ISO 10360-2:2009;

Technical Note:

The E_0,MPE of the most accurate configuration of the CMM specified by the manufacturer (e.g., best of the following: probe, stylus length, motion parameters, environment) and with "all compensations available" shall be compared to the 1,7+L/1 000 μm threshold.

N.B. SEE ALSO 2B206.

Having only two axes and having a maximum permissible error of length measurement along any axis (one dimensional), identified as any combination of E₀ₓ,ₘₚₑ, E₀y,ₘₚₑ, or E₀z,ₘₚₑ, equal to or less (better) than (1,25 + L/1 000) μm (where L is the measured length in mm) at any point within the operating range of the machine (i.e., within the length of the axis), according to ISO 10360-2:2009; or

Three or more axes and having a three dimensional (volumetric) maximum permissible error of length measurement (E₀,ₘₚₑ) equal to or less (better) than (1,7 + L/800) μm (where L is the measured length in mm) at any point within the operating range of the machine (i.e., within the length of the axis), according to ISO 10360-2:2009;

Linear displacement measuring instruments or systems, linear position feedback units, and "electronic assemblies", as follows:

Note: Interferometer and optical-encoder measuring systems containing a "laser" are only specified in 2B006.b.3 and 2B206.c.

‘Non-contact type measuring systems’ with a resolution equal to or less (better) than 0,2 μm within 0 to 0,2 mm of the ‘measuring range’;

Technical Notes:

For the purposes of 2B006.b.1.:

1. ‘non-contact type measuring systems’ are designed to measure the distance between the probe and measured object along a single vector, where the probe or measured object is in motion.

2. ‘measuring range’ means the distance between the minimum and maximum working distance.

Linear position feedback units specially designed for machine tools and having an overall "accuracy" less (better) than (800 + (600 × L/1 000)) nm (L equals effective length in mm);

Measuring systems having all of the following:

a. Containing a "laser";

b. A resolution over their full scale of 0,200 nm or less (better); and

c. Capable of achieving a "measurement uncertainty" equal to or less (better) than (1,6 + L/2 000) nm (L is the measured length in mm) at any point within a measuring range, when compensated for the refractive index of air and measured over a period of 30 seconds at a temperature of 20 ± 0,01 °C; or

"Electronic assemblies" specially designed to provide feedback capability in systems specified in 2B006.b.3.;

Rotary position feedback units specially designed for machine tools or angular displacement measuring instruments, having an angular position "accuracy" equal to or less (better) than 0,9 second of arc;

Note: 2B006.c. does not control optical instruments, such as autocollimators, using collimated light (e.g. "laser" light) to detect angular displacement of a mirror.

Equipment for measuring surface roughness (including surface defects), by measuring optical scatter with a sensitivity of 0,5 nm or less (better).

Note: 2B006 includes machine tools, other than those specified in 2B001, that can be used as measuring machines if they meet or exceed the criteria specified for the measuring machine function.

2B007 "Robots" having any of the following characteristics and specially designed controllers and "end-effectors" therefor:

N.B. SEE ALSO 2B207.

Not used;

Specially designed to comply with national safety standards applicable to potentially explosive munitions environments;

Note: 2B007.b. does not control "robots" specially designed for paint-spraying booths.

Specially designed or rated as radiation-hardened to withstand a total radiation dose greater than 5 × 10³ Gy (silicon) without operational degradation; or

Technical Note:

The term Gy (silicon) refers to the energy in Joules per kilogram absorbed by an unshielded silicon sample when exposed to ionising radiation.

Specially designed to operate at altitudes exceeding 30 000 m.

2B008 ‘Compound rotary tables’ and "tilting spindles", specially designed for machine tools, as follows:

Not used;

‘Compound rotary tables’ having all of the following:

Designed for machine tools for turning, milling or grinding; and

Two rotary axes designed to be coordinated simultaneously for “contouring control”;

Technical Note:

A ‘compound rotary table’ is a table allowing the workpiece to rotate and tilt about two non-parallel axes

"Tilting spindles" having all of the following:

Designed for machine tools for turning, milling or grinding; and

Designed to be coordinated simultaneously for "contouring control".

2B009 Spin-forming machines and flow-forming machines, which, according to the manufacturer’s technical specification, can be equipped with "numerical control" units or a computer control and having all of the following:

N.B. SEE ALSO 2B109 AND 2B209.

Three or more axes which can be coordinated simultaneously for "contouring control"; and

A roller force more than 60 kN.

Technical Note:

For the purpose of 2B009, machines combining the function of spin-forming and flow-forming are regarded as flow-forming machines.

2B104 "Isostatic presses", other than those specified in 2B004, having all of the following:

N.B. SEE ALSO 2B204.

Maximum working pressure of 69 MPa or greater;

Designed to achieve and maintain a controlled thermal environment of 873 K (600 °C) or greater; and

Possessing a chamber cavity with an inside diameter of 254 mm or greater.

2B105 Chemical vapour deposition (CVD) furnaces, other than those specified in 2B005.a., designed or modified for the densification of carbon-carbon composites.

2B109 Flow-forming machines, other than those specified in 2B009, usable in the "production" of propulsion components and equipment (e.g. motor cases and interstages) for "missiles", and specially designed components as follows:

N.B. SEE ALSO 2B209.

Flow-forming machines having all of the following:

Equipped with, or, according to the manufacturer's technical specification, are capable of being equipped with "numerical control" units or computer control; and

More than two axes which can be coordinated simultaneously for "contouring control".

Specially designed components for flow-forming machines specified in 2B009 or 2B109.a.

Technical Note:

Machines combining the function of spin-forming and flow-forming are for the purpose of 2B109 regarded as flow-forming machines.

2B116 Vibration test systems, equipment and components therefor, as follows:

Vibration test systems employing feedback or closed loop techniques and incorporating a digital controller, capable of vibrating a system at an acceleration equal to or greater than 10 g rms between 20 Hz and 2 kHz while imparting forces equal to or greater than 50 kN, measured ‘bare table’;

Digital controllers, combined with specially designed vibration test software, with a ‘real-time control bandwidth’ greater than 5 kHz designed for use with vibration test systems specified in 2B116.a.;

Technical Note:

In 2B116.b., ‘real-time control bandwidth’ means the maximum rate at which a controller can execute complete cycles of sampling, processing data and transmitting control signals.

Vibration thrusters (shaker units), with or without associated amplifiers, capable of imparting a force equal to or greater than 50 kN, measured ‘bare table’, and usable in vibration test systems specified in 2B116.a.;

Test piece support structures and electronic units designed to combine multiple shaker units in a system capable of providing an effective combined force equal to or greater than 50 kN, measured ‘bare table’, and usable in vibration systems specified in 2B116.a.

Technical Note:

In 2B116, ‘bare table’ means a flat table, or surface, with no fixture or fittings.

2B117 Equipment and process controls, other than those specified in 2B004, 2B005.a., 2B104 or 2B105, designed or modified for densification and pyrolysis of structural composite rocket nozzles and reentry vehicle nose tips.

2B119 Balancing machines and related equipment, as follows:

N.B. SEE ALSO 2B219.

Balancing machines having all of the following characteristics:

Not capable of balancing rotors/assemblies having a mass greater than 3 kg;

Capable of balancing rotors/assemblies at speeds greater than 12 500 rpm;

Capable of correcting unbalance in two planes or more; and

Capable of balancing to a residual specific unbalance of 0,2 g mm per kg of rotor mass;

Note: 2B119.a. does not control balancing machines designed or modified for dental or other medical equipment.

Indicator heads designed or modified for use with machines specified in 2B119.a.

Technical Note:

Indicator heads are sometimes known as balancing instrumentation.

2B120 Motion simulators or rate tables having all of the following characteristics:

Two or more axes;

Designed or modified to incorporate slip rings or integrated non-contact devices capable of transferring electrical power, signal information, or both; and

Having any of the following characteristics:

For any single axis having all of the following:

a. Capable of rates of 400 degrees/s or more, or 30 degrees/s or less; and

b. A rate resolution equal to or less than 6 degrees/s and an accuracy equal to or less than 0,6 degrees/s;

Having a worst-case rate stability equal to or better (less) than plus or minus 0,05 % averaged over 10 degrees or more; or

A positioning "accuracy" equal to or less (better) than 5 arc second.

Note 1: 2B120 does not control rotary tables designed or modified for machine tools or for medical equipment. For controls on machine tool rotary tables see 2B008.

Note 2: Motion simulators or rate tables specified in 2B120 remain controlled whether or not slip rings or integrated non-contact devices are fitted at time of export.

2B121 Positioning tables (equipment capable of precise rotary positioning in any axes), other than those specified in 2B120, having all of the following characteristics:

Two or more axes; and

A positioning "accuracy" equal to or less (better) than 5 arc second.

Note: 2B121 does not control rotary tables designed or modified for machine tools or for medical equipment. For controls on machine tool rotary tables see 2B008.

2B122 Centrifuges capable of imparting accelerations greater than 100 g and designed or modified to incorporate slip rings or integrated non-contact devices capable of transferring electrical power, signal information, or both.

Note: Centrifuges specified in 2B122 remain controlled whether or not slip rings or integrated non-contact devices are fitted at time of export.

2B201 Machine tools and any combination thereof, other than those specified in 2B001, as follows, for removing or cutting metals, ceramics or "composites", which, according to the manufacturer’s technical specification, can be equipped with electronic devices for simultaneous "contouring control" in two or more axes:

Technical Note :

Stated positioning accuracy levels derived under the following procedures from measurements made according to ISO 230-2:1988 ( 9 )or national equivalents may be used for each machine tool model if provided to, and accepted by, national authorities instead of individual machine tests. Determination of stated positioning accuracy:

a. Select five machines of a model to be evaluated;

b. Measure the linear axis accuracies according to ISO 230-2:1988 (9) ;

c. Determine the accuracy values (A) for each axis of each machine. The method of calculating the accuracy value is described in the ISO 230-2:1988 (9) standard;

d. Determine the average accuracy value of each axis. This average value becomes the stated positioning accuracy of each axis for the model (Âx Ây...);

e. Since item 2B201 refers to each linear axis, there will be as many stated positioning accuracy values as there are linear axes;

f. If any axis of a machine tool not specified in 2B201.a., 2B201.b. or 2B201.c. has a stated positioning accuracy of 6 μm or better (less) for grinding machines, and 8 μm or better (less) for milling and turning machines, both according to ISO 230-2:1988 (9) , then the builder should be required to reaffirm the accuracy level once every eighteen months.

Machine tools for milling, having any of the following characteristics:

Positioning accuracies with "all compensations available" equal to or less (better) than 6 μm according to ISO 230-2:1988 (9) or national equivalents along any linear axis;

Two or more contouring rotary axes; or

Five or more axes which can be coordinated simultaneously for "contouring control";

Note: 2B201.a. does not control milling machines having the following characteristics:

a. X-axis travel greater than 2 m; and

b. Overall positioning accuracy on the x-axis more (worse) than 30 μm.

Machine tools for grinding, having any of the following characteristics:

Positioning accuracies with "all compensations available" equal to or less (better) than 4 μm according to ISO 230-2:1988 (9) or national equivalents along any linear axis;

Two or more contouring rotary axes; or

Five or more axes which can be coordinated simultaneously for "contouring control";

Note: 2B201.b. does not control grinding machines as follows:

a.Cylindrical external, internal, and external-internal grinding machines having all of the following characteristics:

1.Limited to a maximum workpiece capacity of 150 mm outside diameter or length; and

2. Axes limited to x, z and c;

b. Jig grinders that do not have a z-axis or a w-axis with an overall positioning accuracy less (better) than 4 μm according to ISO 230-2:1988 (9) or national equivalents.

Machine tools for turning, that have positioning accuracies with "all compensations available" better (less) than 6 μm according to ISO 230-2:1988 (9) along any linear axis (overall positioning) for machines capable of machining diameters greater than 35 mm;

Note: 2B201.c. does not control bar machines (Swissturn), limited to machining only bar feed thru, if maximum bar diameter is equal to or less than 42 mm and there is no capability of mounting chucks. Machines may have drilling and/or milling capabilities for machining parts with diameters less than 42 mm.

Note 1: 2B201 does not control special purpose machine tools limited to the manufacture of any of the following parts:

a. Gears;

b. Crankshafts or camshafts;

c. Tools or cutters;

d. Extruder worms.

Note 2: A machine tool having at least two of the three turning, milling or grinding capabilities (e.g., a turning machine with milling capability), must be evaluated against each applicable entry 2B201.a., .b. or .c.

Note 3: 2B201.a.3. and 2B201.b.3. include machines based on a parallel linear kinematic design (e.g., hexapods) that have 5 or more axes none of which is a rotary axis.

2B204 "Isostatic presses", other than those specified in 2B004 or 2B104, and related equipment, as follows:

"Isostatic presses" having both of the following characteristics:

Capable of achieving a maximum working pressure of 69 MPa or greater; and

A chamber cavity with an inside diameter in excess of 152 mm;

Dies, moulds and controls, specially designed for "isostatic presses" specified in 2B204.a.

Technical Note:

In 2B204 the inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other.

2B206 Dimensional inspection machines, instruments or systems, other than those specified in 2B006, as follows:

Computer controlled or numerically controlled coordinate measuring machines (CMM) having either of the following characteristics:

Having only two axes and having a maximum permissible error of length measurement along any axis (one dimensional), identified as any combination of E₀x,MPE, E₀y,MPE, or E₀z,MPE, equal to or less (better) than (1,25 + L/1 000) μm (where L is the measured length in mm) at any point within the operating range of the machine (i.e., within the length of the axis), according to ISO 10360-2:2009; or

Three or more axes and having a three dimensional (volumetric) maximum permissible error of length measurement (E0,MPE) equal to or less (better) than (1,7 + L/800) μm (where L is the measured length in mm) at any point within the operating range of the machine (i.e., within the length of the axis), according to ISO 10360-2:2009;

Technical Note:

The E0,MPE of the most accurate configuration of the CMM specified according to ISO 10360-2:2009 by the manufacturer (e.g., best of the following: probe, stylus, length, motion parameters, environments) and with all compensations available shall be compared to the (1,7 + L/800) μm threshold.

Systems for simultaneous linear-angular inspection of hemishells, having both of the following characteristics:

"Measurement uncertainty" along any linear axis equal to or less (better) than 3,5 μm per 5 mm; and

"Angular position deviation" equal to or less than 0,02⁰;

‘Linear displacement’ measuring systems having all of the following characteristics:

Technical Note:

For the purpose of 2B206.c. ‘linear displacement’ means the change of distance between the measuring probe and the measured object.

1. Containing a "laser"; and

2. Capable of maintaining, for at least 12 hours, at a temperature of ± 1 K (± 1 °C); around a standard temperature and standard pressure, all of the following:

a. A resolution over their full scale of 0,1 μm or better; and

b. With a "measurement uncertainty" equal to or better (less) than (0,2 + L/2 000) μm (L is the measured length in mm).

Note: 2B206.c. does not control measuring interferometer systems, without closed or open loop feedback, containing a laser to measure slide movement errors of machine tools, dimensional inspection machines, or similar equipment.

Linear variable differential transformer (LVDT) systems having both of the following characteristics:

Technical Note:

For the purpose of 2B206.d. ‘linear displacement’ means the change of distance between the measuring probe and the measured object.

1. Having any of the following:

a. "Linearity" equal to or less (better) than 0,1 % measured from 0 to the full operating range, for LVDTs with an operating range up to 5 mm; or

b. "Linearity" equal to or less (better) than 0,1 % measured from 0 to 5 mm for LVDTs with an operating range greater than 5 mm; and

2. Drift equal to or better (less) than 0,1 % per day at a standard ambient test room temperature ±1 K (± 1 °C).

Note 1: Machine tools that can be used as measuring machines are controlled if they meet or exceed the criteria specified for the machine tool function or the measuring machine function.

Note 2: A machine specified in 2B206 is controlled if it exceeds the control threshold anywhere within its operating range.

Technical Notes:

All parameters of measurement values in 2B206 represent plus/minus i.e., not total band.

2B207 "Robots", "end-effectors" and control units, other than those specified in 2B007, as follows:

"Robots" or "end-effectors" specially designed to comply with national safety standards applicable to handling high explosives (for example, meeting electrical code ratings for high explosives);

Control units specially designed for any of the "robots" or "end-effectors" specified in 2B207.a.

2B209 Flow forming machines, spin forming machines capable of flow forming functions, other than those specified in 2B009 or 2B109, and mandrels, as follows:

Machines having both of the following characteristics:

Three or more rollers (active or guiding); and

Which, according to the manufacturer's technical specification, can be equipped with "numerical control" units or a computer control;

Rotor-forming mandrels designed to form cylindrical rotors of inside diameter between 75 mm and 400 mm.

Note: 2B209.a. includes machines which have only a single roller designed to deform metal plus two auxiliary rollers which support the mandrel, but do not participate directly in the deformation process.

2B219 Centrifugal multiplane balancing machines, fixed or portable, horizontal or vertical, as follows:

Centrifugal balancing machines designed for balancing flexible rotors having a length of 600 mm or more and having all of the following characteristics:

Swing or journal diameter greater than 75 mm;

Mass capability of from 0,9 to 23 kg; and

Capable of balancing speed of revolution greater than 5 000 r.p.m.;

Centrifugal balancing machines designed for balancing hollow cylindrical rotor components and having all of the following characteristics:

Journal diameter greater than 75 mm;

Mass capability of from 0,9 to 23 kg

A minimum achievable residual specific unbalance equal to or less than 10 g mm/kg per plane; and

Belt drive type.

2B225 Remote manipulators that can be used to provide remote actions in radiochemical separation operations or hot cells, having either of the following characteristics:

A capability of penetrating 0,6 m or more of hot cell wall (through-the-wall operation); or

A capability of bridging over the top of a hot cell wall with a thickness of 0,6 m or more (over-the-wall operation).

Technical Note:

Remote manipulators provide translation of human operator actions to a remote operating arm and terminal fixture. They may be of ‘master/slave’ type or operated by joystick or keypad.

2B226 Controlled atmosphere (vacuum or inert gas) induction furnaces, other than those specified in 9B001 and 3B001, and power supplies therefor, as follows:

N.B. SEE ALSO 3B001 and 9B001.

Furnaces having all of the following characteristics:

Capable of operation above 1 123 K (850 °C);

Induction coils 600 mm or less in diameter; and

Designed for power inputs of 5 kW or more;

Note: 2B226.a. does not control furnaces designed for the processing of semiconductor wafers.

Power supplies, with a specified power output of 5 kW or more, specially designed for furnaces specified in 2B226.a.

2B227 Vacuum or other controlled atmosphere metallurgical melting and casting furnaces and related equipment as follows:

Arc remelt furnaces, arc melt furnaces and arc melt and casting furnaces having both of the following characteristics:

Consumable electrode capacities between 1 000 cm³ and 20 000 cm³; and

Capable of operating with melting temperatures above 1 973 K (1 700 °C);

Electron beam melting furnaces, plasma atomisation furnaces and plasma melting furnaces, having both of the following characteristics:

A power of 50 kW or greater; and

Capable of operating with melting temperatures above 1 473 K (1 200 °C);

Computer control and monitoring systems specially configured for any of the furnaces specified in 2B227.a. or 2B227.b.;

Plasma torches specially designed for furnaces specified in 2B227.b. having both of the following characteristics:

Operating at a power greater than 50 kW; and

Capable of operating above 1 473 K (1 200 °C);

Electron beam guns specially designed for the furnaces specified in 2B227.b. operating at a power greater than 50 kW.

2B228 Rotor fabrication or assembly equipment, rotor straightening equipment, bellows-forming mandrels and dies, as follows:

Rotor assembly equipment for assembly of gas centrifuge rotor tube sections, baffles, and end caps;

Note: 2B228.a. includes precision mandrels, clamps, and shrink fit machines.

Rotor straightening equipment for alignment of gas centrifuge rotor tube sections to a common axis;

Technical Note:

In 2B228.b. such equipment normally consists of precision measuring probes linked to a computer that subsequently controls the action of, for example, pneumatic rams used for aligning the rotor tube sections.

Bellows-forming mandrels and dies for producing single-convolution bellows.

Technical Note:

In 2B228.c. the bellows have all of the following characteristics:

1. Inside diameter between 75 mm and 400 mm;

2. Length equal to or greater than 12,7 mm;

3. Single convolution depth greater than 2 mm; and

4. Made of high-strength aluminium alloys, maraging steel or high strength "fibrous or filamentary materials".

2B230 All types of ‘pressure transducers’ capable of measuring absolute pressures and having all of the following:

Pressure sensing elements made of or protected by aluminium, aluminium alloy, aluminium oxide (alumina or sapphire), nickel, nickel alloy with more than 60 % nickel by weight, or fully fluorinated hydrocarbon polymers;

Seals, if any, essential for sealing the pressure sensing element, and in direct contact with the process medium, made of or protected by aluminium, aluminium alloy, aluminium oxide (alumina or sapphire), nickel, nickel alloy with more than 60 % nickel by weight, or fully fluorinated hydrocarbon polymers; and

Having either of the following characteristics:

A full scale of less than 13 kPa and an ‘accuracy’ of better than 1 % of full-scale; or

A full scale of 13 kPa or greater and an ‘accuracy’ of better than 130 Pa when measured at 13 kPa.

Technical Notes:

1. In 2B230 ‘pressure transducer’ means a device that converts a pressure measurement into a signal.

2. For the purposes of 2B230, ‘accuracy’ includes non-linearity, hysteresis and repeatability at ambient temperature.

2B231 Vacuum pumps having all of the following characteristics:

Input throat size equal to or greater than 380 mm;

Pumping speed equal to or greater than 15 m³/s; and

Capable of producing an ultimate vacuum better than 13 mPa.

Technical Notes:

1. The pumping speed is determined at the measurement point with nitrogen gas or air.

2. The ultimate vacuum is determined at the input of the pump with the input of the pump blocked off.

2B232 High-velocity gun systems (propellant, gas, coil, electromagnetic, and electrothermal types, and other advanced systems) capable of accelerating projectiles to 1,5 km/s or greater.

N.B. SEE ALSO MILTARY GOODS CONTROLS.

2B233 Bellows-sealed scroll-type compressors and bellows-sealed scroll-type vacuum pumps having all of the following:

N.B. SEE ALSO 2B350.i.

Capable of an inlet volume flow rate of 50 m³/h or greater;

Capable of a pressure ratio of 2:1 or greater; and

Having all surfaces that come in contact with the process gas made from any of the following materials:

Aluminium or aluminium alloy;

Aluminium oxide;

Stainless steel;

Nickel or nickel alloy;

Phosphor bronze; or

Fluoropolymers.

2B350 Chemical manufacturing facilities, equipment and components, as follows:

Reaction vessels or reactors, with or without agitators, with total internal (geometric) volume greater than 0,1 m³ (100 litres) and less than 20 m³ (20 000 litres), where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

N.B. For prefabricated repair assemblies, see 2B350.k.

‘Alloys’ with more than 25 % nickel and 20 % chromium by weight;

Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

Glass (including vitrified or enamelled coating or glass lining);

Nickel or ‘alloys’ with more than 40 % nickel by weight;

Tantalum or tantalum ‘alloys’;

Titanium or titanium ‘alloys’;

Zirconium or zirconium ‘alloys’; or

Niobium (columbium) or niobium ‘alloys’;

Agitators designed for use in reaction vessels or reactors specified in 2B350.a.; and impellers, blades or shafts designed for such agitators, where all surfaces of the agitator that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

‘Alloys’ with more than 25 % nickel and 20 % chromium by weight;

Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

Glass (including vitrified or enamelled coatings or glass lining);

Nickel or ‘alloys’ with more than 40 % nickel by weight;

Tantalum or tantalum ‘alloys’;

Titanium or titanium ‘alloys’;

Zirconium or zirconium ‘alloys’; or

Niobium (columbium) or niobium ‘alloys’;

Storage tanks, containers or receivers with a total internal (geometric) volume greater than 0,1 m³ (100 litres) where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

N.B. For prefabricated repair assemblies, see 2B350.k.

‘Alloys’ with more than 25 % nickel and 20 % chromium by weight;

Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

Glass (including vitrified or enamelled coatings or glass lining);

Nickel or ‘alloys’ with more than 40 % nickel by weight;

Tantalum or tantalum ‘alloys’;

Titanium or titanium ‘alloys’;

Zirconium or zirconium ‘alloys’; or

Niobium (columbium) or niobium ‘alloys’;

Heat exchangers or condensers with a heat transfer surface area greater than 0,15 m², and less than 20 m²; and tubes, plates, coils or blocks (cores) designed for such heat exchangers or condensers, where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

‘Alloys’ with more than 25 % nickel and 20 % chromium by weight;

Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

Glass (including vitrified or enamelled coatings or glass lining);

Graphite or ‘carbon graphite’;

Nickel or ‘alloys’ with more than 40 % nickel by weight;

Tantalum or tantalum ‘alloys’;

Titanium or titanium ‘alloys’;

Zirconium or zirconium ‘alloys’;

Silicon carbide;

10.

Titanium carbide; or

11.

Niobium (columbium) or niobium ‘alloys’;

Distillation or absorption columns of internal diameter greater than 0,1 m; and liquid distributors, vapour distributors or liquid collectors designed for such distillation or absorption columns, where all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

‘Alloys’ with more than 25 % nickel and 20 % chromium by weight;

Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

Glass (including vitrified or enamelled coatings or glass lining);

Graphite or ‘carbon graphite’;

Nickel or ‘alloys’ with more than 40 % nickel by weight;

Tantalum or tantalum ‘alloys’;

Titanium or titanium ‘alloys’;

Zirconium or zirconium ‘alloys’; or

Niobium (columbium) or niobium ‘alloys’;

Remotely operated filling equipment in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

‘Alloys’ with more than 25 % nickel and 20 % chromium by weight; or

Nickel or ‘alloys’ with more than 40 % nickel by weight;

Valves and components, as follows:

Valves, having both of the following:

a. A ‘nominal size’ greater than DN 10 or NPS 3/8; and

b. All surfaces that come in direct contact with the chemical(s) being produced, processed, or contained are made from ‘corrosion resistant materials’;

Valves, other than those specified in 2B350.g.1., having all of the following;

a. A ‘nominal size’ equal to or greater than DN 25 or NPS 1 and equal to or less than DN 100 or NPS 4;

b. Casings (valve bodies) or preformed casing liners;

c. A closure element designed to be interchangeable; and

d. All surfaces of the casing (valve body) or preformed case liner that come in direct contact with the chemical(s) being produced, processed, or contained are made from ‘corrosion resistant materials’;

Components, designed for valves specified in 2B350.g.1. or 2B350.g.2., in which all surfaces that come in direct contact with the chemical(s) being produced, processed, or contained are made from ‘corrosion resistant materials’, as follows:

a. Casings (valve bodies);

b. Preformed casing liners;

Technical Notes:

1. For the purposes of 2B350.g., ‘corrosion resistant materials’ means any of the following materials:

a. Nickel or alloys with more than 40 % nickel by weight;

b. Alloys with more than 25 % nickel and 20 % chromium by weight;

c. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

d. Glass or glass-lined (including vitrified or enamelled coating);

e. Tantalum or tantalum alloys;

f. Titanium or titanium alloys;

g. Zirconium or zirconium alloys;

h. Niobium (columbium) or niobium alloys; or

i. Ceramic materials as follows:

1. Silicon carbide with a purity of 80 % or more by weight;

2. Aluminium oxide (alumina) with a purity of 99,9 % or more by weight;

3. Zirconium oxide (zirconia).

2. The ‘nominal size’ is defined as the smaller of the inlet and outlet diameters.

3. Nominal sizes (DN) of valves are in accordance with ISO 6708:1995. Nominal Pipe Sizes (NPS) are in accordance with ASME B36.10 or B36.19 or national equivalents.

Multi-walled piping incorporating a leak detection port, in which all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials:

‘Alloys’ with more than 25 % nickel and 20 % chromium by weight;

Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

Glass (including vitrified or enamelled coatings or glass lining);

Graphite or ‘carbon graphite’;

Nickel or ‘alloys’ with more than 40 % nickel by weight

Tantalum or tantalum ‘alloys’;

Titanium or titanium ‘alloys’;

Zirconium or zirconium ‘alloys’; or

Niobium (columbium) or niobium ‘alloys’;

Multiple-seal and seal-less pumps, with manufacturer's specified maximum flow-rate greater than 0,6 m³/hour, or vacuum pumps with manufacturer's specified maximum flow-rate greater than 5 m³/hour (under standard temperature (273 K (0 °C)) and pressure (101,3 kPa) conditions), other than those specified in 2B233; and casings (pump bodies), preformed casing liners, impellers, rotors or jet pump nozzles designed for such pumps, in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials:

Alloys’ with more than 25 % nickel and 20 % chromium by weight;

Ceramics;

Ferrosilicon (high silicon iron alloys);

Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight);

Glass (including vitrified or enamelled coatings or glass lining);

Graphite or ‘carbon graphite’;

Nickel or ‘alloys’ with more than 40 % nickel by weight;

Tantalum or tantalum ‘alloys’;

Titanium or titanium ‘alloys’;

10.

Zirconium or zirconium ‘alloys’; or

11.

Niobium (columbium) or niobium ‘alloys’;

Technical Note:

In 2B350.i., the term seal refers to only those seals that come into direct contact with the chemical(s) being processed (or are designed to), and provide a sealing function where a rotary or reciprocating drive shaft passes through a pump body.

Incinerators designed to destroy chemicals specified in entry 1C350, having specially designed waste supply systems, special handling facilities and an average combustion chamber temperature greater than 1 273 K (1 000 °C), in which all surfaces in the waste supply system that come into direct contact with the waste products are made from or lined with any of the following materials:

‘Alloys’ with more than 25 % nickel and 20 % chromium by weight;

Ceramics; or

Nickel or ‘alloys’ with more than 40 % nickel by weight;

Prefabricated repair assemblies having metallic surfaces that come in direct contact with the chemical(s) being processed which are made from tantalum or tantalum alloys as follows, and specially designed components therefor:

Designed for mechanical attachment to glass-lined reaction vessels or reactors specified in 2B350.a.; or

Designed for mechanical attachment to glass-lined storage tanks, containers or receivers specified in 2B350.c

Note: For the purposes of 2B350, the materials used for gaskets, packing, seals, screws, washers or other materials performing a sealing function do not determine the status of control, provided that such components are designed to be interchangeable.

Technical Notes:

1. ‘Carbon graphite’ is a composition consisting of amorphous carbon and graphite, in which the graphite content is eight percent or more by weight.

2. For the listed materials in the above entries, the term ‘alloy’ when not accompanied by a specific elemental concentration is understood as identifying those alloys where the identified metal is present in a higher percentage by weight than any other element.

2B351 Toxic gas monitors and monitoring systems and their dedicated detecting components, other than those specified in 1A004, as follows; and detectors; sensor devices; and replaceable sensor cartridges therefor:

Designed for continuous operation and usable for the detection of chemical warfare agents or chemicals specified in 1C350, at concentrations of less than 0,3 mg/m³; or

Designed for the detection of cholinesterase-inhibiting activity.

2B352 Biological manufacturing and handling equipment, as follows:

Containment facilities and related equipment as follows:

Complete containment facilities that meet the criteria for P3 or P4 (BL3, BL4, L3, L4) containment as specified in the WHO Laboratory Biosafety Manual (3rd edition, Geneva, 2004);

Equipment designed for fixed installation in containment facilities specified in 2B352.a., as follows:

a. Double-door pass-through decontamination autoclaves;

b. Breathing air suit decontamination showers;

c. Mechanical-seal or inflatable-seal walkthrough doors;

Fermenters and components as follows:

Fermenters capable of cultivation of "microorganisms" or of live cells for the production of viruses or toxins, without the propagation of aerosols, having a total internal volume of 20 litres or more;

Components designed for fermenters specified in 2B352.b.1. as follows:

a. Cultivation chambers designed to be sterilised or disinfected in situ;

b. Cultivation chamber holding devices;

c. Process control units capable of simultaneously monitoring and controlling two or more fermentation system parameters (e.g., temperature, pH, nutrients, agitation, dissolved oxygen, air flow, foam control);

Technical Notes:

1. For the purposes of 2B352.b. fermenters include bioreactors, single-use (disposable) bioreactors, chemostats and continuous-flow systems.

2. Cultivation chamber holding devices include single-use cultivation chambers with rigid walls.

Centrifugal separators, capable of continuous separation without the propagation of aerosols, having all of the following characteristics:

Flow rate exceeding 100 litres per hour;

Components of polished stainless steel or titanium;

One or more sealing joints within the steam containment area; and

Capable of in-situ steam sterilisation in a closed state;

Technical Note:

Centrifugal separators include decanters.

Cross (tangential) flow filtration equipment and components as follows:

Cross (tangential) flow filtration equipment capable of separation of "microorganisms", viruses, toxins or cell cultures having all of the following characteristics:

a. A total filtration area equal to or greater than 1 m²; and

b. Having any of the following characteristics:

1. Capable of being sterilised or disinfected in-situ; or

2. Using disposable or single-use filtration components;

Technical Note:

In 2B352.d.1.b. sterilised denotes the elimination of all viable microbes from the equipment through the use of either physical (e.g. steam) or chemical agents. Disinfected denotes the destruction of potential microbial infectivity in the equipment through the use of chemical agents with a germicidal effect. Disinfection and sterilisation are distinct from sanitisation, the latter referring to cleaning procedures designed to lower the microbial content of equipment without necessarily achieving elimination of all microbial infectivity or viability.

Cross (tangential) flow filtration components (e.g. modules, elements, cassettes, cartridges, units or plates) with filtration area equal to or greater than 0,2 m² for each component and designed for use in cross (tangential) flow filtration equipment specified in 2B352.d.;

Note: 2B352.d. does not control reverse osmosis and hemodialysis equipment, as specified by the manufacturer.

Steam, gas or vapour sterilisable freeze-drying equipment with a condenser capacity of 10 kg of ice or more in 24 hours and less than 1 000 kg of ice in 24 hours;

Protective and containment equipment, as follows:

Protective full or half suits, or hoods dependent upon a tethered external air supply and operating under positive pressure;

Note: 2B352.f.1. does not control suits designed to be worn with self-contained breathing apparatus.

Biocontainment chambers, isolators, or biological safety cabinets having all of the following characteristics, for normal operation:

a. Fully enclosed workspace where the operator is separated from the work by a physical barrier;

b. Able to operate at negative pressure;

c. Means to safely manipulate items in the workspace;

d. Supply and exhaust air to and from the workspace is HEPA filtered;

Note 1: 2B352.f.2. includes Class III biosafety cabinets, as described in the latest edition of the WHO Laboratory Biosafety Manual or constructed in accordance with national standards, regulations or guidance.

Note 2: 2B352.f.2. includes any isolator meeting all of the above mentioned characteristics, regardless of its intended use and its designation.

Note 3: 2B352.f.2. does not include isolators specially designed for barrier nursing or transportation of infected patients.

Aerosol inhalation equipment designed for aerosol challenge testing with "microorganisms", viruses or "toxins" as follows:

Whole-body exposure chambers having a capacity of 1 m³ or more;

Nose-only exposure apparatus utilising directed aerosol flow and having capacity for exposure of any of the following:

a. 12 or more rodents; or

b. 2 or more animals other than rodents;

Closed animal restraint tubes designed for use with nose-only exposure apparatus utilising directed aerosol flow;

Spray drying equipment capable of drying toxins or pathogenic "microorganisms" having all of the following:

A water evaporation capacity of ≥ 0,4 kg/h and ≤ 400 kg/h;

The ability to generate a typical mean product particle size of ≤10 μm with existing fittings or by minimal modification of the spray-dryer with atomisation nozzles enabling generation of the required particle size; and

Capable of being sterilised or disinfected in situ;

Nucleic acid assemblers and synthesisers, which are partly or entirely automated, and designed to generate continuous nucleic acids greater than 1,5 kilobases in length with error rates less than 5 % in a single run.

2C Materials

None

2D Software

2D001 "Software", other than that specified in 2D002, as follows:

"Software" specially designed or modified for the "development" or "production" of equipment specified in 2A001 or 2B001 to 2B009

"Software" specially designed or modified for the "use" of equipment specified in 2A001.c., 2B001 or 2B003 to 2B009.

Note: 2D001 does not control part programming "software" that generates "numerical control" codes for machining various parts.

2D002 "Software" for electronic devices, even when residing in an electronic device or system, enabling such devices or systems to function as a "numerical control" unit, capable of co-ordinating simultaneously more than four axes for "contouring control".

Note 1: 2D002 does not control "software" specially designed or modified for the operation of items not specified in Category 2.

Note 2: 2D002 does not control "software" for items specified in 2B002. See 2D001 and 2D003 for "software" for items specified in 2B002.

Note 3: 2D002 does not control "software" that is exported with, and the minimum necessary for the operation of, items not specified in Category 2.

2D003 "Software", designed or modified for the operation of equipment specified in 2B002, that converts optical design, workpiece measurements and material removal functions into "numerical control" commands to achieve the desired workpiece form.

2D101 "Software" specially designed or modified for the "use" of equipment specified in 2B104, 2B105, 2B109, 2B116, 2B117 or 2B119 to 2B122.

2D201 "Software" specially designed for the "use" of equipment specified in 2B204, 2B206, 2B207, 2B209, 2B219 or 2B227.

2D202 "Software" specially designed or modified for the "development", "production" or "use" of equipment specified in 2B201.

Note: 2D202 does not control part programming "software" that generates "numerical control" command codes but does not allow direct use of equipment for machining various parts.

2D351 "Software", other than that specified in 1D003, specially designed for "use" of equipment specified in 2B351.

2E Technology

2E001 "Technology" according to the General Technology Note for the "development" of equipment or "software" specified in 2A, 2B or 2D.

Note: 2E001 includes "technology" for the integration of probe systems into coordinate measurement machines specified in 2B006.a.

2E002 "Technology" according to the General Technology Note for the "production" of equipment specified in 2A or 2B.

2E003 Other "technology", as follows:

Not used;

"Technology" for metal-working manufacturing processes, as follows:

"Technology" for the design of tools, dies or fixtures specially designed for any of the following processes:

a. "Superplastic forming";

b. "Diffusion bonding"; or

c. ‘Direct-acting hydraulic pressing’;

Technical data consisting of process methods or parameters as listed below used to control:

a. "Superplastic forming" of aluminium alloys, titanium alloys or "superalloys":

1. Surface preparation;

2. Strain rate;

3. Temperature;

4. Pressure;

b. "Diffusion bonding" of "superalloys" or titanium alloys:

1. Surface preparation;

2. Temperature;

3. Pressure;

c. ‘Direct-acting hydraulic pressing’ of aluminium alloys or titanium alloys:

1. Pressure;

2. Cycle time;

d. ‘Hot isostatic densification’ of titanium alloys, aluminium alloys or "superalloys":

1. Temperature;

2. Pressure;

3. Cycle time;

Technical Notes:

1.‘Direct-acting hydraulic pressing’ is a deformation process which uses a fluid-filled flexible bladder in direct contact with the workpiece.

2.‘Hot isostatic densification’ is a process of pressurising a casting at temperatures exceeding 375 K (102 °C) in a closed cavity through various media (gas, liquid, solid particles, etc.) to create equal force in all directions to reduce or eliminate internal voids in the casting.

"Technology" for the "development" or "production" of hydraulic stretch-forming machines and dies therefor, for the manufacture of airframe structures;

Not used;

"Technology" for the "development" of integration "software" for incorporation of expert systems for advanced decision support of shop floor operations into "numerical control" units;

"Technology" for the application of inorganic overlay coatings or inorganic surface modification coatings (specified in column 3 of the following table) to non-electronic substrates (specified in column 2 of the following table), by processes specified in column 1 of the following table and defined in the Technical Note.

Note: The table and Technical Note appear after entry 2E301.

N.B. This table should be read to specify the "technology" for a particular Coating Process only when the Resultant Coating in column 3 is in a paragraph directly across from the relevant Substrate under column 2. For example, Chemical Vapour Deposition (CVD) coating process technical data are included for the application of silicides to carbon-carbon, ceramic and metal "matrix" "composites" substrates, but are not included for the application of silicides to ‘cemented tungsten carbide’ (16), ‘silicon carbide’ (18) substrates. In the second case, the resultant coating is not listed in the paragraph under column 3 directly across from the paragraph under column 2 listing ‘cemented tungsten carbide’ (16), ‘silicon carbide’ (18).

2E101 "Technology" according to the General Technology Note for the "use" of equipment or "software" specified in 2B004, 2B009, 2B104, 2B109, 2B116, 2B119 to 2B122 or 2D101.

2E201 "Technology" according to the General Technology Note for the "use" of equipment or "software" specified in 2A225, 2A226, 2B001, 2B006, 2B007.b., 2B007.c., 2B008, 2B009, 2B201, 2B204, 2B206, 2B207, 2B209, 2B225 to 2B233, 2D201 or 2D202.

2E301 "Technology" according to the General Technology Note for the "use" of goods specified in 2B350 to 2B352.

Table

Deposition techniques

1. Coating Process (1) (*1)	2. Substrate	3. Resultant Coating
A. Chemical Vapour Deposition (CVD)	"Superalloys"	Aluminides for internal passages
	Ceramics (19) and Low expansion glasses (14)	Silicides Carbides Dielectric layers (15) Diamond Diamond-like carbon (17)
	Carbon-carbon, Ceramic and Metal "matrix" "composites"	Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Aluminides Alloyed aluminides (2) Boron nitride
	Cemented tungsten carbide (16), Silicon carbide (18)	Carbides Tungsten Mixtures thereof (4) Dielectric layers (15)
	Molybdenum and Molybdenum alloys	Dielectric layers (15)
	Beryllium and Beryllium alloys	Dielectric layers (15) Diamond Diamond-like carbon (17)
	Sensor window materials (9)	Dielectric layers (15) Diamond Diamond-like carbon (17)
B. Thermal-Evaporation Physical Vapour Deposition (TE-PVD)
B.1. Physical Vapour Deposition (PVD): Electron-Beam (EB-PVD)	"Superalloys"	Alloyed silicides Alloyed aluminides (2) MCrAlX (5) Modified zirconia (12) Silicides Aluminides Mixtures thereof (4)
	Ceramics (19) and Low expansion glasses (14)	Dielectric layers (15)
	Corrosion resistant steel (7)	MCrAlX (5) Modified zirconia (12) Mixtures thereof (4)
	Carbon-carbon, Ceramic and Metal "matrix" "composites"	Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride
	Cemented tungsten carbide (16), Silicon carbide (18)	Carbides Tungsten Mixtures thereof (4) Dielectric layers (15)
	Molybdenum and Molybdenum alloys	Dielectric layers (15)
	Beryllium and Beryllium alloys	Dielectric layers (15) Borides Beryllium
	Sensor window materials (9)	Dielectric layers (15)
	Titanium alloys (13)	Borides Nitrides
B.2. Ion assisted resistive heating Physical Vapour Deposition (PVD) (Ion Plating)	Ceramics (19) and Low-expansion glasses	Dielectric layers (15) Diamond-like carbon (17)
	Carbon-carbon, Ceramic and Metal "matrix" "composites"	Dielectric layers (15)
	Cemented tungsten carbide (16), Silicon carbide	Dielectric layers (15)
	Molybdenum and Molybdenum alloys	Dielectric layers (15)
	Beryllium and Beryllium alloys	Dielectric layers (15)
	Sensor window materials (9)	Dielectric layers (15) Diamond-like carbon (17)
B.3. Physical Vapour Deposition (PVD): "Laser" Vaporization	Ceramics (19) and Low expansion glasses (14)	Silicides Dielectric layers (15) Diamond-like carbon (17)
	Carbon-carbon, Ceramic and Metal "matrix" "composites"	Dielectric layers (15)
	Cemented tungsten carbide (16), Silicon carbide	Dielectric layers (15)
	Molybdenum and Molybdenum alloys	Dielectric layers (15)
	Beryllium and Beryllium alloys	Dielectric layers (15)
	Sensor window materials (9)	Dielectric layers (15) Diamond-like carbon (17)
B.4. Physical Vapour Deposition (PVD): Cathodic Arc Discharge	"Superalloys"	Alloyed silicides Alloyed aluminides (2) MCrAlX (5)
	Polymers (11) and Organic "matrix" "composites"	Borides Carbides Nitrides Diamond-like carbon (17)
C. Pack cementation (see A above for out-of-pack cementation) (10)	Carbon-carbon, Ceramic and Metal "matrix" "composites"	Silicides Carbides Mixtures thereof (4)
	Titanium alloys (13)	Silicides Aluminides Alloyed aluminides (2)
	Refractory metals and alloys (8)	Silicides Oxides
D. Plasma spraying	"Superalloys"	MCrAlX (5) Modified zirconia (12) Mixtures thereof (4) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester Alloyed aluminides (2)
	Aluminium alloys (6)	MCrAlX (5) Modified zirconia (12) Silicides Mixtures thereof (4)
	Refractory metals and alloys (8)	Aluminides Silicides Carbides
	Corrosion resistant steel (7)	MCrAlX (5) Modified zirconia (12) Mixtures thereof (4)
	Titanium alloys (13)	Carbides Aluminides Silicides Alloyed aluminides (2) Abradable Nickel-Graphite Abradable materials containing Ni-Cr-Al Abradable Al-Si-Polyester
E. Slurry Deposition	Refractory metals and alloys (8)	Fused silicides Fused aluminides except for resistance heating elements
	Carbon-carbon, Ceramic and Metal "matrix" "composites"	Silicides Carbides Mixtures thereof (4)
F. Sputter Deposition	"Superalloys"	Alloyed silicides Alloyed aluminides (2) Noble metal modified aluminides (3) MCrAlX (5) Modified zirconia (12) Platinum Mixtures thereof (4)
	Ceramics and Low - expansion glasses (14)	Silicides Platinum Mixtures thereof (4) Dielectic layers (15) Diamond-like carbon (17)
	Titanium alloys (13)	Borides Nitrides Oxides Silicides Aluminides Alloyed aluminides (2) Carbides
	Carbon-carbon, Ceramic and Metal "matrix" "composites"	Silicides Carbides Refractory metals Mixtures thereof (4) Dielectric layers (15) Boron nitride
	Cemented tungsten carbide (16), Silicon carbide (18)	Carbides Tungsten Mixtures thereof (4) Dielectric layers (15) Boron nitride
	Molybdenum and Molybdenum alloys	Dielectric layers (15)
	Beryllium and Beryllium alloys	Borides Dielectric layers (15) Beryllium
	Sensor window materials (9)	Dielectric layers (15) Diamond-like carbon (17)
	Refractory metals and alloys (8)	Aluminides Silicides Oxides Carbides
G. Ion Implantation	High temperature bearing steels	Additions of Chromium Tantalum or Niobium (Columbium)
	Titanium alloys (13)	Borides Nitrides
	Beryllium and Beryllium alloys	Borides
	Cemented tungsten carbide (16)	Carbides Nitrides
(*1) The numbers in parenthesis refer to the Notes following this Table.

TABLE - DEPOSITION TECHNIQUES - NOTES

1. The term ‘coating process’ includes coating repair and refurbishing as well as original coating.

2. The term ‘alloyed aluminide coating’ includes single or multiple-step coatings in which an element or elements are deposited prior to or during application of the aluminide coating, even if these elements are deposited by another coating process. It does not, however, include the multiple use of single-step pack cementation processes to achieve alloyed aluminides.

3. The term ‘noble metal modified aluminide’ coating includes multiple-step coatings in which the noble metal or noble metals are laid down by some other coating process prior to application of the aluminide coating.

4. The term ‘mixtures thereof’ includes infiltrated material, graded compositions, co-deposits and multilayer deposits and are obtained by one or more of the coating processes specified in the Table.

5. ‘MCrAlX’ refers to a coating alloy where M equals cobalt, iron, nickel or combinations thereof and X equals hafnium, yttrium, silicon, tantalum in any amount or other intentional additions over 0,01 % by weight in various proportions and combinations, except:

a. CoCrAlY coatings which contain less than 22 % by weight of chromium, less than 7 % by weight of aluminium and less than 2 % by weight of yttrium;

b. CoCrAlY coatings which contain 22 to 24 % by weight of chromium, 10 to 12 % by weight of aluminium and 0,5 to 0,7 % by weight of yttrium; or

c. NiCrAlY coatings which contain 21 to 23 % by weight of chromium, 10 to 12 % by weight of aluminium and 0,9 to 1,1 % by weight of yttrium.

6. The term ‘aluminium alloys’ refers to alloys having an ultimate tensile strength of 190 MPa or more measured at 293 K (20 °C).

7. The term ‘corrosion resistant steel’ refers to AISI (American Iron and Steel Institute) 300 series or equivalent national standard steels.

8. ‘Refractory metals and alloys’ include the following metals and their alloys: niobium (columbium), molybdenum, tungsten and tantalum.

9. ‘Sensor window materials’, as follows: alumina, silicon, germanium, zinc sulphide, zinc selenide, gallium arsenide, diamond, gallium phosphide, sapphire and the following metal halides: sensor window materials of more than 40 mm diameter for zirconium fluoride and hafnium fluoride.

10. Category 2 does not include "technology" for single-step pack cementation of solid airfoils.

11. ‘Polymers’, as follows: polyimide, polyester, polysulphide, polycarbonates and polyurethanes.

12. ‘Modified zirconia’ refers to additions of other metal oxides (e.g., calcia, magnesia, yttria, hafnia, rare earth oxides) to zirconia in order to stabilise certain crystallographic phases and phase compositions. Thermal barrier coatings made of zirconia, modified with calcia or magnesia by mixing or fusion, are not controlled.

13. ‘Titanium alloys’ refers only to aerospace alloys having an ultimate tensile strength of 900 MPa or more measured at 293 K (20 °C).

14. ‘Low-expansion glasses’ refers to glasses which have a coefficient of thermal expansion of 1 × 10^–7 K^–1 or less measured at 293 K (20 °C).

15. ‘Dielectric layers’ are coatings constructed of multi-layers of insulator materials in which the interference properties of a design composed of materials of various refractive indices are used to reflect, transmit or absorb various wavelength bands. Dielectric layers refers to more than four dielectric layers or dielectric/metal "composite" layers.

16. ‘Cemented tungsten carbide’ does not include cutting and forming tool materials consisting of tungsten carbide/(cobalt, nickel), titanium carbide/(cobalt, nickel), chromium carbide/nickel-chromium and chromium carbide/nickel.

17. "Technology" for depositing diamond-like carbon on any of the following is not controlled:

magnetic disk drives and heads, equipment for the manufacture of disposables, valves for faucets, acoustic diaphragms for speakers, engine parts for automobiles, cutting tools, punching-pressing dies, office automation equipment, microphones or medical devices or moulds, for casting or moulding of plastics, manufactured from alloys containing less than 5 % beryllium.

18. ‘Silicon carbide’ does not include cutting and forming tool materials.

19. Ceramic substrates, as used in this entry, does not include ceramic materials containing 5 % by weight, or greater, clay or cement content, either as separate constituents or in combination.

TABLE - DEPOSITION TECHNIQUES - TECHNICAL NOTE

Processes specified in Column 1 of the Table are defined as follows:

a. Chemical Vapour Deposition (CVD) is an overlay coating or surface modification coating process wherein a metal, alloy, "composite", dielectric or ceramic is deposited upon a heated substrate. Gaseous reactants are decomposed or combined in the vicinity of a substrate resulting in the deposition of the desired elemental, alloy or compound material on the substrate. Energy for this decomposition or chemical reaction process may be provided by the heat of the substrate, a glow discharge plasma, or "laser" irradiation.

N.B.1 CVD includes the following processes: directed gas flow out-of-pack deposition, pulsating CVD, controlled nucleation thermal deposition (CNTD), plasma enhanced or plasma assisted CVD processes.

N.B.2 Pack denotes a substrate immersed in a powder mixture.

N.B.3 The gaseous reactants used in the out-of-pack process are produced using the same basic reactions and parameters as the pack cementation process, except that the substrate to be coated is not in contact with the powder mixture.

b. Thermal Evaporation-Physical Vapour Deposition (TE-PVD) is an overlay coating process conducted in a vacuum with a pressure less than 0,1 Pa wherein a source of thermal energy is used to vaporize the coating material. This process results in the condensation, or deposition, of the evaporated species onto appropriately positioned substrates.

The addition of gases to the vacuum chamber during the coating process to synthesise compound coatings is an ordinary modification of the process.

The use of ion or electron beams, or plasma, to activate or assist the coating's deposition is also a common modification in this technique. The use of monitors to provide in-process measurement of optical characteristics and thickness of coatings can be a feature of these processes.

Specific TE-PVD processes are as follows:

1. Electron Beam PVD uses an electron beam to heat and evaporate the material which forms the coating;

2. Ion Assisted Resistive Heating PVD employs electrically resistive heating sources in combination with impinging ion beam(s) to produce a controlled and uniform flux of evaporated coating species;

3. "Laser" Vaporization uses either pulsed or continuous wave "laser" beams to vaporize the material which forms the coating;

4. Cathodic Arc Deposition employs a consumable cathode of the material which forms the coating and has an arc discharge established on the surface by a momentary contact of a ground trigger. Controlled motion of arcing erodes the cathode surface creating a highly ionised plasma. The anode can be either a cone attached to the periphery of the cathode, through an insulator, or the chamber. Substrate biasing is used for non line-of-sight deposition;

N.B. This definition does not include random cathodic arc deposition with non-biased substrates.

5. Ion Plating is a special modification of a general TE-PVD process in which a plasma or an ion source is used to ionise the species to be deposited, and a negative bias is applied to the substrate in order to facilitate the extraction of the species from the plasma. The introduction of reactive species, evaporation of solids within the process chamber, and the use of monitors to provide in-process measurement of optical characteristics and thicknesses of coatings are ordinary modifications of the process.

c. Pack Cementation is a surface modification coating or overlay coating process wherein a substrate is immersed in a powder mixture (a pack), that consists of:

1. The metallic powders that are to be deposited (usually aluminium, chromium, silicon or combinations thereof);

2. An activator (normally a halide salt); and

3. An inert powder, most frequently alumina.

The substrate and powder mixture is contained within a retort which is heated to between 1 030 K (757 °C) and 1 375 K (1 102 °C) for sufficient time to deposit the coating.

d. Plasma Spraying is an overlay coating process wherein a gun (spray torch) which produces and controls a plasma accepts powder or wire coating materials, melts them and propels them towards a substrate, whereon an integrally bonded coating is formed. Plasma spraying constitutes either low pressure plasma spraying or high velocity plasma spraying.

N.B.1 Low pressure means less than ambient atmospheric pressure.

N.B.2 High velocity refers to nozzle-exit gas velocity exceeding 750 m/s calculated at 293 K (20 °C) at 0,1 MPa.

e.Slurry Deposition is a surface modification coating or overlay coating process wherein a metallic or ceramic powder with an organic binder is suspended in a liquid and is applied to a substrate by either spraying, dipping or painting, subsequent air or oven drying, and heat treatment to obtain the desired coating.

f. Sputter Deposition is an overlay coating process based on a momentum transfer phenomenon, wherein positive ions are accelerated by an electric field towards the surface of a target (coating material). The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on an appropriately positioned substrate.

N.B.1 The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporisation of non-metallic coating materials.

N.B.2 Low-energy ion beams (less than 5 keV) can be used to activate the deposition.

g. Ion Implantation is a surface modification coating process in which the element to be alloyed is ionised, accelerated through a potential gradient and implanted into the surface region of the substrate. This includes processes in which ion implantation is performed simultaneously with electron beam physical vapour deposition or sputter deposition.

Category 3 - ELECTRONICS

3A Systems, Equipment and Components

Note 1: The control status of equipment and components described in 3A001 or 3A002, other than those described in 3A001.a.3. to 3A001.a.10., or 3A001.a.12. to 3A001.a.14., which are specially designed for or which have the same functional characteristics as other equipment is determined by the control status of the other equipment.

Note 2: The control status of integrated circuits described in 3A001.a.3. to 3A001.a.9., or 3A001.a.12. to 3A001.a.14., which are unalterably programmed or designed for a specific function for another equipment is determined by the control status of the other equipment.

N.B. When the manufacturer or applicant cannot determine the control status of the other equipment, the control status of the integrated circuits is determined in 3A001.a.3. to 3A001.a.9., and 3A001.a.12. to 3A001.a.14.

Note 3: The status of wafers (finished or unfinished), in which the function has been determined, is to be evaluated against the parameters of 3A001.a., 3A001.b., 3A001.d., 3A001.e.4., 3A001.g., 3A001.h., or 3A001.i.

3A001 Electronic items as follows:

General purpose integrated circuits, as follows:

Note: Integrated circuits include the following types:

— "Monolithic integrated circuits";

— "Hybrid integrated circuits";

— "Multichip integrated circuits";

— "Film type integrated circuits", including silicon-on-sapphire integrated circuits;

— "Optical integrated circuits";

— "Three dimensional integrated circuits";

— "Monolithic Microwave Integrated Circuits" ("MMICs").

Integrated circuits designed or rated as radiation hardened to withstand any of the following:

a. A total dose of 5 × 10³ Gy (silicon) or higher;

b. A dose rate upset of 5 × 10⁶ Gy (silicon)/s or higher; or

c. A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 10¹³ n/cm² or higher on silicon, or its equivalent for other materials;

Note: 3A001.a.1.c. does not control Metal Insulator Semiconductors (MIS).

"Microprocessor microcircuits", "microcomputer microcircuits", microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, integrated circuits that contain analogue-to-digital converters and store or process the digitised data, digital-to-analogue converters, electro-optical or "optical integrated circuits" designed for "signal processing", field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, Static Random-Access Memories (SRAMs), or ‘non-volatile memories’, having any of the following:

a. Rated for operation at an ambient temperature above 398 K (125 °C);

b. Rated for operation at an ambient temperature below 218 K (–55 °C); or

c. Rated for operation over the entire ambient temperature range from 218 K (–55 °C) to 398 K (125 °C);

Note: 3A001.a.2. does not control integrated circuits designed for civil automobiles or railway train applications.

Technical Note:

‘Non-volatile memories’ are memories with data retention over a period of time after a power shutdown.

"Microprocessor microcircuits", "microcomputer microcircuits" and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz;

Note: 3A001.a.3. includes digital signal processors, digital array processors and digital coprocessors.

Not used;

Analogue-to-Digital Converter (ADC) and Digital-to-Analogue Converter (DAC) integrated circuits, as follows:

a. ADCs having any of the following:

N.B. SEE ALSO 3A101

1. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1,3 Giga Samples Per Second (GSPS);

2. A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 600 Mega Samples Per Second (MSPS);

3. A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 400 MSPS;

4. A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 250 MSPS; or

5. A resolution of 16 bit or more with a "sample rate" greater than 65 MSPS;

N.B. For integrated circuits that contain analogue-to-digital converters and store or process the digitised data, see 3A001.a.14.

Technical Notes:

1. A resolution of n bit corresponds to a quantisation of 2n levels.

2. The resolution of the ADC is the number of bits of the digital output that represents the measured analogue input. Effective Number of Bits (ENOB) is not used to determine the resolution of the ADC.

3. For "multiple channel ADCs", the "sample rate" is not aggregated and the "sample rate" is the maximum rate of any single channel.

4. For "interleaved ADCs" or for "multiple channel ADCs" that are specified to have an interleaved mode of operation, the "sample rates" are aggregated and the "sample rate" is the maximum combined total rate of all of the interleaved channels.

b. Digital-to-Analogue Converters (DAC) having any of the following:

1. A resolution of 10 bit or more but less than 12 bit, with an ‘adjusted update rate’ exceeding 3 500 MSPS; or

2. A resolution of 12 bit or more and having any of the following:

a. An ‘adjusted update rate’ exceeding 1 250 MSPS but not exceeding 3 500 MSPS, and having any of the following:

1. A settling time less than 9 ns to arrive at or within 0,024 % of full scale from a full scale step; or

2. A ‘Spurious Free Dynamic Range’ (SFDR) greater than 68 dBc (carrier) when synthesising a full scale analogue signal of 100 MHz or the highest full scale analogue signal frequency specified below 100 MHz; or

b. An ‘adjusted update rate’ exceeding 3 500 MSPS;

Technical Notes:

1. ‘Spurious Free Dynamic Range’ (SFDR) is defined as the ratio of the RMS value of the carrier frequency (maximum signal component) at the input of the DAC to the RMS value of the next largest noise or harmonic distortion component at its output.

2. SFDR is determined directly from the specification table or from the characterisation plots of SFDR versus frequency.

3. A signal is defined to be full scale when its amplitude is greater than -3 dBfs (full scale).

4. ‘Adjusted update rate’ for DACs:

a. For conventional (non-interpolating) DACs, the ‘adjusted update rate’ is the rate at which the digital signal is converted to an analogue signal and the output analogue values are changed by the DAC. For DACs where the interpolation mode may be bypassed (interpolation factor of one), the DAC should be considered as a conventional (non-interpolating) DAC.

b. For interpolating DACs (oversampling DACs), the ‘adjusted update rate’ is defined as the DAC update rate divided by the smallest interpolating factor. For interpolating DACs, the ‘adjusted update rate’ may be referred to by different terms including:— input data rate

— input word rate

— input sample rate

— maximum total input bus rate

— maximum DAC clock rate for DAC clock input.

Electro-optical and "optical integrated circuits", designed for "signal processing" and having all of the following:

a. One or more than one internal "laser" diode;

b. One or more than one internal light detecting element; and

c. Optical waveguides;

Field programmable logic devices having any of the following:

a. A maximum number of single-ended digital input/outputs of greater than 700; or

b. An ‘aggregate one-way peak serial transceiver data rate’ of 500 Gb/s or greater;

Note: 3A001.a.7. includes:

— Complex Programmable Logic Devices (CPLDs)

— Field Programmable Gate Arrays (FPGAs)

— Field Programmable Logic Arrays (FPLAs)

— Field Programmable Interconnects (FPICs)

N.B. For integrated circuits having field programmable logic devices that are combined with an analogue-to-digital converter, see 3A001.a.14.

Technical Notes:

1. Maximum number of digital input/outputs in 3A001.a.7.a. is also referred to as the maximum user input/outputs or maximum available input/outputs, whether the integrated circuit is packaged or bare die.

2. ‘Aggregate one-way peak serial transceiver data rate’ is the product of the peak serial one-way transceiver data rate times the number of transceivers on the FPGA.

Not used;

Neural network integrated circuits;

10.

Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:

a. More than 1 500 terminals;

b. A typical "basic gate propagation delay time" of less than 0,02 ns; or

c. An operating frequency exceeding 3 GHz;

11.

Digital integrated circuits, other than those described in 3A001.a.3. to 3A001.a.10. and 3A001.a.12., based upon any compound semiconductor and having any of the following:

a. An equivalent gate count of more than 3 000 (2 input gates); or

b. A toggle frequency exceeding 1,2 GHz;

12.

Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log₂ N)/20 480 ms, where N is the number of points;

Technical Note:

When N is equal to 1 024 points, the formula in 3A001.a.12. gives an execution time of 500 μs.

13.

Direct Digital Synthesizer (DDS) integrated circuits having any of the following:

a. A Digital-to-Analogue Converter (DAC) clock frequency of 3,5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or

b. A DAC clock frequency of 1,25 GHz or more and a DAC resolution of 12 bit or more;

Technical Note:

The DAC clock frequency may be specified as the master clock frequency or the input clock frequency.

14.

Integrated circuits that perform or are programmable to perform all of the following:

a. Analogue-to-digital conversions meeting any of the following:

1. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1,3 Giga Samples Per Second (GSPS);

2. A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 1,0 GSPS;

3. A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 1,0 GSPS;

4. A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 400 Mega Samples Per Second (MSPS); or

5. A resolution of 16 bit or more with a "sample rate" greater than 180 MSPS; and

b. Any of the following:

1. Storage of digitised data; or

2. Processing of digitised data;

N.B.1. For analogue-to-digital converter integrated circuits see 3A001.a.5.a.

N.B.2. For field programmable logic devices see 3A001.a.7.

Technical Notes:

1. A resolution of n bit corresponds to a quantisation of 2 n levels.

2. The resolution of the ADC is the number of bits of the digital output of the ADC that represents the measured analogue input. Effective Number of Bits (ENOB) is not used to determine the resolution of the ADC.

3. For integrated circuits with non-interleaving "multiple channel ADCs", the "sample rate" is not aggregated and the "sample rate" is the maximum rate of any single channel.

4. For integrated circuits with "interleaved ADCs "or with "multiple channel ADCs" that are specified to have an interleaved mode of operation, the "sample rates" are aggregated and the "sample rate" is the maximum combined total rate of all of the interleaved channels.

Microwave or millimetre wave items as follows:

Technical Note:

For purposes of 3A001.b., the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output.

"Vacuum electronic devices" and cathodes, as follows:

Note 1: 3A001.b.1. does not control "vacuum electronic devices" designed or rated for operation in any frequency band and having all of the following:

a. Does not exceed 31,8 GHz; and

b. Is "allocated by the ITU" for radio-communications services, but not for radio-determination.

Note 2: 3A001.b.1. does not control non-"space-qualified" "vacuum electronic devices" having all of the following:

a. An average output power equal to or less than 50 W; and

b. Designed or rated for operation in any frequency band and having all of the following:

1. Exceeds 31,8 GHz but does not exceed 43,5 GHz; and

2. Is "allocated by the ITU" for radio-communications services, but not for radio-determination.

a. Travelling-wave "vacuum electronic devices", pulsed or continuous wave, as follows:

1. Devices operating at frequencies exceeding 31,8 GHz;

2. Devices having a cathode heater with a turn on time to rated RF power of less than 3 seconds;

3. Coupled cavity devices, or derivatives thereof, with a "fractional bandwidth" of more than 7 % or a peak power exceeding 2,5 kW;

4. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following:

a. An "instantaneous bandwidth" of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5;

b. An "instantaneous bandwidth" of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1;

c. Being "space-qualified"; or

d. Having a gridded electron gun;

5. Devices with a "fractional bandwidth" greater than or equal to 10 %, with any of the following:

a. An annular electron beam;

b. A non-axisymmetric electron beam; or

c. Multiple electron beams;

b. Crossed-field amplifier "vacuum electronic devices" with a gain of more than 17 dB;

c. Thermionic cathodes designed for "vacuum electronic devices" producing an emission current density at rated operating conditions exceeding 5 A/cm² or a pulsed (non-continuous) current density at rated operating conditions exceeding 10 A/cm²;

d. Vacuum electronic devices" with the capability to operate in a ‘dual mode’.

Technical Note:

‘Dual mode’ means the "vacuum electronic device" beam current can be intentionally changed between continuous-wave and pulsed mode operation by use of a grid and produces a peak pulse output power greater than the continuous-wave output power.

"Monolithic Microwave Integrated Circuits" ("MMIC") amplifiers that are any of the following:

N.B. For "MMIC" amplifiers that have an integrated phase shifter see 3A001.b.12.

a.Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15 %, and having any of the following:

1.A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

2.A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

3.A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

4.A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

b.Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a "fractional bandwidth" greater than 10 %, and having any of the following:

1.A peak saturated power output greater than 10 W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or

2.A peak saturated power output greater than 5 W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz;

c.Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a "fractional bandwidth" of greater than 10 %;

d.Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

e.Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %;

f. Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %;

g. Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or

h. Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 90 GHz;

Note 1: Not used.

Note 2: The control status of the "MMIC" whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.2.a. to 3A001.b.2.h., is determined by the lowest peak saturated power output threshold.

Note 3: Notes 1 and 2 in 3A mean that 3A001.b.2. does not control "MMICs" if they are specially designed for other applications, e.g., telecommunications, radar, automobiles.

Discrete microwave transistors that are any of the following:

a. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz and having any of the following:

1. A peak saturated power output greater than 400 W (56 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

2. A peak saturated power output greater than 205 W (53,12 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

3. A peak saturated power output greater than 115 W (50,61 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

4. A peak saturated power output greater than 60 W (47,78 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

b. Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz and having any of the following:

1. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz;

2. A peak saturated power output greater than 15 W (41,76 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz;

3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or

4. A peak saturated power output greater than 7 W (38,45 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz;

c. Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

d. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz;

e. Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 43,5 GHz; or

f. Other than those specified in 3A001.b.3.a. to 3A001.b.3.e and rated for operation with a peak saturated power output greater than 5 W (37,0 dBm) at all frequencies exceeding 8,5 GHz up to and including 31,8 GHz;

Note 1: The control status of a transistor in 3A001.b.3.a. through 3A001.b.3.e. whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.3.a. to 3A001.b.3.e., is determined by the lowest peak saturated power output threshold.

Note 2: 3A001.b.3. includes bare dice, dice mounted on carriers, or dice mounted in packages. Some discrete transistors may also be referred to as power amplifiers, but the status of these discrete transistors is determined by 3A001.b.3.

Microwave solid state amplifiers and microwave assemblies/modules containing microwave solid state amplifiers, that are any of the following:

a. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15 %, and having any of the following:

1. A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

2. A peak saturated power output greater than 270 W (54,3 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

3. A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

4. A peak saturated power output greater than 90 W (49,54 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

b. Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz with a "fractional bandwidth" greater than 10 %, and having any of the following:

1. A peak saturated power output greater than 70 W (48,54 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz;

2. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz;

3. A peak saturated power output greater than 30 W (44,77 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or

4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz;

c. Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

d. Rated for operation with a peak saturated power output greater than 2 W (33 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %;

e. Rated for operation at frequencies exceeding 43,5 GHz and having any of the following:

1. A peak saturated power output greater than 0,2 W (23 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %;

2. A peak saturated power output greater than 20 mW (13 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or

3. A peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 90 GHz; or

f. Not used

N.B.1. For "MMIC" amplifiers see 3A001.b.2.

N.B.2. For ‘transmit/receive modules’ and ‘transmit modules’ see 3A001.b.12.

N.B.3. For converters and harmonic mixers, designed to extend the operating or frequency range of signal analysers, signal generators, network analysers or microwave test receivers, see 3A001.b.7.

Note 1: Not used.

Note 2: The control status of an item whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.4.a. to 3A001.b.4.e., is determined by the lowest peak saturated power output threshold.

Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fₘₐₓ/fₘᵢₙ) in less than 10 μs and having any of the following:

a. A band-pass bandwidth of more than 0,5 % of centre frequency; or

b. A band-stop bandwidth of less than 0,5 % of centre frequency;

Not used;

Converters and harmonic mixers that are any of the following:

a. Designed to extend the frequency range of "signal analysers" beyond 90 GHz;

b. Designed to extend the operating range of signal generators as follows:

1. Beyond 90 GHz;

2. To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

c. Designed to extend the operating range of network analysers as follows:

1. Beyond 110 GHz;

2. To an output power greater than 31,62 mW (15 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

3. To an output power greater than 1 mW (0 dBm) anywhere within the frequency range exceeding 90 GHz but not exceeding 110 GHz; or

d. Designed to extend the frequency range of microwave test receivers beyond 110 GHz;

Microwave power amplifiers containing "vacuum electronic devices" specified in 3A001.b.1. and having all of the following:

a. Operating frequencies above 3 GHz;

b. An average output power to mass ratio exceeding 80 W/kg; and

c. A volume of less than 400 cm³;

Note: 3A001.b.8. does not control equipment designed or rated for operation in any frequency band which is "allocated by the ITU" for radio-communications services, but not for radio-determination.

Microwave power modules (MPM) consisting of, at least, a travelling wave "vacuum electronic device", a "monolithic microwave integrated circuit" ("MMIC") and an integrated electronic power conditioner and having all of the following:

a. A ‘turn-on time’ from off to fully operational in less than 10 seconds;

b. A volume less than the maximum rated power in Watts multiplied by 10 cm³/W; and

c. An "instantaneous bandwidth" greater than 1 octave (f_max > 2f_min) and having any of the following:

1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or

2. A frequency greater than 18 GHz;

Technical Notes:

1. To calculate the volume in 3A001.b.9.b., the following example is provided: for a maximum rated power of 20 W, the volume would be: 20 W × 10 cm³/W = 200 cm³.

2. The ‘turn-on time’ in 3A001.b.9.a. refers to the time from fully-off to fully operational, i.e., it includes the warm-up time of the MPM.

10.

Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than -(126 + 20log₁₀F - 20log₁₀f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz;

Technical Note:

In 3A001.b.10., F is the offset from the operating frequency in Hz and f is the operating frequency in MHz.

11.

‘Frequency synthesiser’ "electronic assemblies" having a "frequency switching time" as specified by any of the following:

a. Less than 143 ps;

b. Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz;

c. Not used;

d. Less than 500 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 31,8 GHz but not exceeding 37 GHz;

e. Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 37 GHz but not exceeding 90 GHz; or

f. Not used;

g. Less than 1 ms within the synthesised frequency range exceeding 90 GHz;

Technical Note:

A ‘frequency synthesiser’ is any kind of frequency source, regardless of the actual technique used, providing a multiplicity of simultaneous or alternative output frequencies, from one or more outputs, controlled by, derived from or disciplined by a lesser number of standard (or master) frequencies.

N.B. For general purpose "signal analysers", signal generators, network analysers and microwave test receivers, see 3A002.c., 3A002.d., 3A002.e. and 3A002.f., respectively.

12.

‘Transmit/receive modules’, ‘transmit/receive MMICs’, ‘transmit modules’, and ‘transmit MMICs’, rated for operation at frequencies above 2,7 GHz and having all of the following:

a. A peak saturated power output (in watts), Psat, greater than 505,62 divided by the maximum operating frequency (in GHz) squared [P_sat > 505,62 W*GHz2/f_GHz 2] for any channel;

b. A "fractional bandwidth" of 5 % or greater for any channel;

c. Any planar side with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d ≤ 15cm*GHz*N/f_GHz] where N is the number of transmit or transmit/receive channels; and

d. An electronically variable phase shifter per channel.

Technical Notes:

1. A ‘transmit/receive module’: is a multifunction "electronic assembly" that provides bi-directional amplitude and phase control for transmission and reception of signals.

2. A ‘transmit module’: is an "electronic assembly" that provides amplitude and phase control for transmission of signals.

3. A ‘transmit/receive MMIC’: is a multifunction "MMIC" that provides bi-directional amplitude and phase control for transmission and reception of signals.

4. A ‘transmit MMIC’: is a "MMIC" that provides amplitude and phase control for transmission of signals.

5. 2,7 GHz should be used as the lowest operating frequency (fGHz) in the formula in 3A001.b.12.c. for transmit/receive or transmit modules that have a rated operation range extending downward to 2,7 GHz and below [d≤15cm*GHz*N/2,7 GHz].

6. 3A001.b.12. applies to ‘transmit/receive modules’ or ‘transmit modules’ with or without a heat sink. The value of d in 3A001.b.12.c. does not include any portion of the ‘transmit/receive module’ or ‘transmit module’ that functions as a heat sink.

7. ‘Transmit/receive modules’, or ‘transmit modules’, or ‘transmit/receive MMICs’ or ‘transmit MMICs’ may or may not have N integrated radiating antenna elements where N is the number of transmit or transmit/receive channels.

Acoustic wave devices as follows and specially designed components therefor:

Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following:

a. A carrier frequency exceeding 6 GHz;

b. A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following:

1. A ‘frequency side-lobe rejection’ exceeding 65 dB;

2. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;

3. A bandwidth greater than 250 MHz; or

4. A dispersive delay of more than 10 μs; or

c. A carrier frequency of 1 GHz or less and having any of the following:

1. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100;

2. A dispersive delay of more than 10 μs; or

3. A ‘frequency side-lobe rejection’ exceeding 65 dB and a bandwidth greater than 100 MHz;

Technical Note:

‘Frequency side-lobe rejection’ is the maximum rejection value specified in data sheet.

Bulk (volume) acoustic wave devices which permit the direct processing of signals at frequencies exceeding 6 GHz;

Acoustic-optic "signal processing" devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;

Note: 3A001.c. does not control acoustic wave devices that are limited to a single band pass, low pass, high pass or notch filtering, or resonating function.

Electronic devices and circuits containing components, manufactured from "superconductive" materials, specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following:

Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10⁻¹⁴ J; or

Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10 000 ;

High energy devices as follows:

‘Cells’ as follows:

a. ‘Primary cells’ having any of the following at 20 °C;

1. ‘Energy density’ exceeding 550 Wh/kg and a ‘continuous power density’ exceeding 50 W/kg; or

2. ‘Energy density’ exceeding 50 Wh/kg and a ‘continuous power density’ exceeding 350 W/kg; or

b. ‘Secondary cells’ having an ‘energy density’ exceeding 350 Wh/kg at 20 °C;

Technical Notes:

1. For the purpose of 3A001.e.1., ‘energy density’ (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in ohms and the mass in kilograms.

2. For the purpose of 3A001.e.1., a ‘cell’ is defined as an electrochemical device, which has positive and negative electrodes, an electrolyte, and is a source of electrical energy. It is the basic building block of a battery.

3. For the purpose of 3A001.e.1.a., a ‘primary cell’ is a ‘cell’ that is not designed to be charged by any other source.

4. For the purpose of 3A001.e.1.b., a ‘secondary cell’ is a ‘cell’ that is designed to be charged by an external electrical source.

5. For the purpose of 3A001.e.1.a., ‘continuous power density’ (W/kg) is calculated from the nominal voltage multiplied by the specified maximum continuous discharge current in ampere (A) divided by the mass in kilograms. ‘Continuous power density’ is also referred to as specific power.

Note: 3A001.e.1. does not control batteries, including single-cell batteries.

High energy storage capacitors as follows:

N.B. SEE ALSO 3A201.a. and the Military Goods Controls.

a. Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 250 J/kg; and

3. A total energy equal to or more than 25 kJ;

b. Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 50 J/kg;

3. A total energy equal to or more than 100 J; and

4. A charge/discharge cycle life equal to or more than 10 000 ;

"Superconductive" electromagnets and solenoids, specially designed to be fully charged or discharged in less than one second and having all of the following:

N.B. SEE ALSO 3A201.b.

Note: 3A001.e.3. does not control "superconductive" electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment.

a. Energy delivered during the discharge exceeding 10 kJ in the first second;

b. Inner diameter of the current carrying windings of more than 250 mm; and

c. Rated for a magnetic induction of more than 8 T or "overall current density" in the winding of more than 300 A/mm²;

Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are "space-qualified", having a minimum average efficiency exceeding 20 % at an operating temperature of 301 K (28 °C) under simulated ‘AM0’ illumination with an irradiance of 1 367 watts per square metre (W/m²);

Technical Note:

‘AM0’, or ‘Air Mass Zero’, refers to the spectral irradiance of sun light in the earth's outer atmosphere when the distance between the earth and sun is one astronomical unit (AU).

Rotary input type absolute position encoders having an "accuracy" equal to or less (better) than 1,0 second of arc and specially designed encoder rings, discs or scales therefor;

Solid-state pulsed power switching thyristor devices and ‘thyristor modules’, using either electrically, optically, or electron radiation controlled switch methods and having any of the following:

A maximum turn-on current rate of rise (di/dt) greater than 30 000 A/μs and off-state voltage greater than 1 100 V; or

A maximum turn-on current rate of rise (di/dt) greater than 2 000 A/μs and having all of the following:

a. An off-state peak voltage equal to or greater than 3 000 V; and

b. A peak (surge) current equal to or greater than 3 000 A.

Note 1: 3A001.g. includes:

— Silicon Controlled Rectifiers (SCRs)

— Electrical Triggering Thyristors (ETTs)

— Light Triggering Thyristors (LTTs)

— Integrated Gate Commutated Thyristors (IGCTs)

— Gate Turn-off Thyristors (GTOs)

— MOS Controlled Thyristors (MCTs)

— Solidtrons

Note 2: 3A001.g. does not control thyristor devices and ‘thyristor modules’ incorporated into equipment designed for civil railway or "civil aircraft" applications.

Technical Note:

For the purposes of 3A001.g., a ‘thyristor module’ contains one or more thyristor devices.

Solid-state power semiconductor switches, diodes, or ‘modules’, having all of the following:

1. Rated for a maximum operating junction temperature greater than 488 K (215 °C); 2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and 3. Continuous current greater than 1 A. Note 1: Repetitive peak off-state voltage in 3A001.h. includes drain to source voltage, collector to emitter voltage, repetitive peak reverse voltage and peak repetitive off-state blocking voltage. Note 2: 3A001.h. includes: — Junction Field Effect Transistors (JFETs) — Vertical Junction Field Effect Transistors (VJFETs) — Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) — Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOSFET) — Insulated Gate Bipolar Transistor (IGBT) — High Electron Mobility Transistors (HEMTs) — Bipolar Junction Transistors (BJTs) — Thyristors and Silicon Controlled Rectifiers (SCRs) — Gate Turn-Off Thyristors (GTOs) — Emitter Turn-Off Thyristors (ETOs) — PiN Diodes — Schottky Diodes Note 3: 3A001.h. does not control switches, diodes, or ‘modules’, incorporated into equipment designed for civil automobile, civil railway or "civil aircraft" applications. Technical Note: For the purposes of 3A001.h., ‘modules’ contain one or more solid-state power semiconductor switches or diodes.

Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and

Continuous current greater than 1 A.

Note 1: Repetitive peak off-state voltage in 3A001.h. includes drain to source voltage, collector to emitter voltage, repetitive peak reverse voltage and peak repetitive off-state blocking voltage.

Note 2: 3A001.h. includes:

— Junction Field Effect Transistors (JFETs)

— Vertical Junction Field Effect Transistors (VJFETs)

— Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

— Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOSFET)

— Insulated Gate Bipolar Transistor (IGBT)

— High Electron Mobility Transistors (HEMTs)

— Bipolar Junction Transistors (BJTs)

— Thyristors and Silicon Controlled Rectifiers (SCRs)

— Gate Turn-Off Thyristors (GTOs)

— Emitter Turn-Off Thyristors (ETOs)

— PiN Diodes

— Schottky Diodes

Note 3: 3A001.h. does not control switches, diodes, or ‘modules’, incorporated into equipment designed for civil automobile, civil railway or "civil aircraft" applications.

Technical Note:

For the purposes of 3A001.h., ‘modules’ contain one or more solid-state power semiconductor switches or diodes.

Intensity, amplitude, or phase electro-optic modulators, designed for analogue signals and having any of the following:

A maximum operating frequency of more than 10 GHz but less than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:

a. A ‘half-wave voltage’ (‘Vπ’) less than 2,7 V when measured at a frequency of 1 GHz or below; or

b. A ‘Vπ’ of less than 4 V when measured at a frequency of more than 1 GHz; or

A maximum operating frequency equal to or greater than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:

a. A ‘Vπ’ less than 3,3 V when measured at a frequency of 1 GHz or below; or

b. A ‘Vπ’ less than 5 V when measured at a frequency of more than 1 GHz.

Note: 3A001.i. includes electro-optic modulators having optical input and output connectors (e.g., fibre-optic pigtails).

Technical Note:

For the purposes of 3A001.i., a ‘half-wave voltage’ (‘Vπ’) is the applied voltage necessary to make a phase change of 180 degrees in the wavelength of light propagating through the optical modulator.

3A002 General purpose "electronic assemblies", modules and equipment, as follows:

Recording equipment and oscilloscopes as follows:

Not used;

Digital data recorders having all of the following:

a. A sustained ‘continuous throughput’ of more than 6,4 Gbit/s to disk or solid-state drive memory; and

b. "Signal processing" of the radio frequency signal data while it is being recorded;

Technical Notes:

1. For recorders with a parallel bus architecture, the ‘continuous throughput’ rate is the highest word rate multiplied by the number of bits in a word.

2. ‘Continuous throughput’ is the fastest data rate the instrument can record to disk or solid-state drive memory without the loss of any information while sustaining the input digital data rate or digitizer conversion rate.

Real-time oscilloscopes having a vertical root-mean-square (rms) noise voltage of less than 2 % of full-scale at the vertical scale setting that provides the lowest noise value for any input 3dB bandwidth of 60 GHz or greater per channel;

Note: 3A002.a.7. does not control equivalent-time sampling oscilloscopes.

Not used;

"Signal analysers" as follows:

"Signal analysers" having a 3 dB resolution bandwidth (RBW) exceeding 40 MHz anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz;

"Signal analysers" having Displayed Average Noise Level (DANL) less (better) than -150 dBm/Hz anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

"Signal analysers" having a frequency exceeding 90 GHz;

"Signal analysers" having all of the following:

a.‘Real-time bandwidth’ exceeding 170 MHz; and

b.Having any of the following:

1. 100 % probability of discovery with less than a 3 dB reduction from full amplitude due to gaps or windowing effects of signals having a duration of 15 μs or less; or

2. A ‘frequency mask trigger’ function with 100 % probability of trigger (capture) for signals having a duration of 15 μs or less;

Technical Notes:

1. ‘Real-time bandwidth’ is the widest frequency range for which the analyser can continuously transform time-domain data entirely into frequency-domain results, using a Fourier or other discrete time transform that processes every incoming time point, without a reduction of measured amplitude of more than 3 dB below the actual signal amplitude caused by gaps or windowing effects, while outputting or displaying the transformed data.

2. Probability of discovery in 3A002.c.4.b.1. is also referred to as probability of intercept or probability of capture.

3. For the purposes of 3A002.c.4.b.1., the duration for 100 % probability of discovery is equivalent to the minimum signal duration necessary for the specified level measurement uncertainty.

4. A ‘frequency mask trigger’ is a mechanism where the trigger function is able to select a frequency range to be triggered on as a subset of the acquisition bandwidth while ignoring other signals that may also be present within the same acquisition bandwidth. A ‘frequency mask trigger’ may contain more than one independent set of limits.

Note: 3A002.c.4. does not control those "signal analysers" using only constant percentage bandwidth filters (also known as octave or fractional octave filters).

Not used;

Signal generators having any of the following:

Specified to generate pulse-modulated signals having all of the following, anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz:

a. ‘Pulse duration’ of less than 25 ns; and

b. On/off ratio equal to or exceeding 65 dB;

An output power exceeding 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

A "frequency switching time" as specified by any of the following:

a. Not used;

b. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz;

c. Not used;

d. Less than 500 μs for any frequency change exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; or

e. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 90 GHz;

f. Not used;

Single sideband (SSB) phase noise, in dBc/Hz, specified as being any of the following:

a. Less (better) than -(126 + 20log₁₀F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 90 GHz; or

b. Less (better) than -(206 - 20log₁₀f) anywhere within the range of 10 kHz< F≤ 100 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 90 GHz;

Technical Note:

In 3A002.d.4., F is the offset from the operating frequency in Hz and f is the operating frequency in MHz;

An ‘RF modulation bandwidth’ of digital baseband signals as specified by any of the following:

a. Exceeding 2,2 GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz;

b. Exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; or

c. Exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 90 GHz; or

Technical Note:

‘RF modulation bandwidth’ is the Radio Frequency (RF) bandwidth occupied by a digitally encoded baseband signal modulated onto an RF signal. It is also referred to as information bandwidth or vector modulation bandwidth. I/Q digital modulation is the technical method for producing a vector-modulated RF output signal, and that output signal is typically specified as having an ‘RF modulation bandwidth’.

A maximum frequency exceeding 90 GHz;

Note 1: For the purpose of 3A002.d., signal generators include arbitrary waveform and function generators.

Note 2: 3A002.d. does not control equipment in which the output frequency is either produced by the addition or subtraction of two or more crystal oscillator frequencies, or by an addition or subtraction followed by a multiplication of the result.

Technical Notes:

1. The maximum frequency of an arbitrary waveform or function generator is calculated by dividing the sample rate, in samples/second, by a factor of 2,5.

2. For the purposes of 3A002.d.1.a, ‘pulse duration’ is defined as the time interval from the point on the leading edge that is 50 % of the pulse amplitude to the point on the trailing edge that is 50 % of the pulse amplitude.

Network analysers having any of the following:

An output power exceeding 31,62 mW (15 dBm) anywhere within the operating frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

An output power exceeding 1 mW (0 dBm) anywhere within the operating frequency range exceeding 90 GHz but not exceeding 110 GHz;

‘Nonlinear vector measurement functionality’ at frequencies exceeding 50 GHz but not exceeding 110 GHz; or

Technical Note:

‘Nonlinear vector measurement functionality’ is an instrument’s ability to analyse the test results of devices driven into the large-signal domain or the non-linear distortion range.

A maximum operating frequency exceeding 110 GHz;

Microwave test receivers having all of the following:

A maximum operating frequency exceeding 110 GHz; and

Being capable of measuring amplitude and phase simultaneously;

Atomic frequency standards being any of the following:

"Space-qualified";

Non-rubidium and having a long-term stability less (better) than 1 × 10⁻¹¹/month; or

Non-"space-qualified" and having all of the following:

a. Being a rubidium standard;

b. Long-term stability less (better) than 1 × 10^–11/month; and

c. Total power consumption of less than 1 W;

"Electronic assemblies", modules, or equipment, specified to perform all of the following:

Analogue-to-digital conversions meeting any of the following:

a. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1,3 Giga Samples Per Second (GSPS);

b. A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 1,0 GSPS;

c. A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 1,0 GSPS;

d. A resolution of 14 bit or more but less than 16 bit, with a "sample rate" greater than 400 Mega Samples Per Second (MSPS); or

e. A resolution of 16 bit or more with a "sample rate" greater than 180 MSPS; and

Any of the following:

a. Output of digitised data;

b. Storage of digitised data; or

c. Processing of digitised data;

N.B. Digital data recorders, oscilloscopes, "signal analysers", signal generators, network analysers and microwave test receivers, are specified in 3A002.a.6., 3A002.a.7., 3A002.c., 3A002.d., 3A002.e. and 3A002.f., respectively.

Technical Notes:

1. A resolution of n bit corresponds to a quantisation of 2n levels.

3. For non-interleaved multiple-channel "electronic assemblies", modules, or equipment, the "sample rate" is not aggregated and the "sample rate" is the maximum rate of any single-channel.

4. For interleaved channels on multiple-channel "electronic assemblies", modules, or equipment, the "sample rates" are aggregated and the "sample rate" is the maximum combined total rate of all the interleaved channels.

Note: 3A002.h. includes ADC cards, waveform digitizers, data acquisition cards, signal acquisition boards and transient recorders.

3A003 Spray cooling thermal management systems employing closed loop fluid handling and reconditioning equipment in a sealed enclosure where a dielectric fluid is sprayed onto electronic components using specially designed spray nozzles that are designed to maintain electronic components within their operating temperature range, and specially designed components therefor.

3A101 Electronic equipment, devices and components, other than those specified in 3A001, as follows:

Analogue-to-digital converters, usable in "missiles", designed to meet military specifications for ruggedized equipment;

Accelerators capable of delivering electromagnetic radiation produced by bremsstrahlung from accelerated electrons of 2 MeV or greater, and systems containing those accelerators.

Note: 3A101.b. above does not specify equipment specially designed for medical purposes.

3A102 ‘Thermal batteries’ designed or modified for ‘missiles’.

Technical Notes:

1. In 3A102 ‘thermal batteries’ are single use batteries that contain a solid non-conducting inorganic salt as the electrolyte. These batteries incorporate a pyrolytic material that, when ignited, melts the electrolyte and activates the battery.

2. In 3A102 ‘missile’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

3A201 Electronic components, other than those specified in 3A001, as follows;

Capacitors having either of the following sets of characteristics:

a. Voltage rating greater than 1,4 kV;

b. Energy storage greater than 10 J;

c. Capacitance greater than 0,5 μF; and

d. Series inductance less than 50 nH; or

a. Voltage rating greater than 750 V;

b. Capacitance greater than 0,25 μF; and

c. Series inductance less than 10 nH;

Superconducting solenoidal electromagnets having all of the following characteristics:

Capable of creating magnetic fields greater than 2 T;

A ratio of length to inner diameter greater than 2;

Inner diameter greater than 300 mm; and

Magnetic field uniform to better than 1 % over the central 50 % of the inner volume;

Note: 3A201.b. does not control magnets specially designed for and exported ‘as parts of’ medical nuclear magnetic resonance (NMR) imaging systems. The phrase ‘as part of’ does not necessarily mean physical part in the same shipment; separate shipments from different sources are allowed, provided the related export documents clearly specify that the shipments are dispatched ‘as part of’ the imaging systems.

Flash X-ray generators or pulsed electron accelerators having either of the following sets of characteristics:

a. An accelerator peak electron energy of 500 keV or greater but less than 25 MeV; and

b. With a ‘figure of merit’ (K) of 0,25 or greater; or

a. An accelerator peak electron energy of 25 MeV or greater; and

b. A ‘peak power’ greater than 50 MW.

Note: 3A201.c. does not control accelerators that are component parts of devices designed for purposes other than electron beam or X-ray radiation (electron microscopy, for example) nor those designed for medical purposes.

Technical Notes:

1. The ‘figure of merit’ (K) is defined as:

K = 1,7 × 10³V^2,65Q

V is the peak electron energy in million electron volts.

If the accelerator beam pulse duration is less than or equal to 1 μs, then Q is the total accelerated charge in Coulombs. If the accelerator beam pulse duration is greater than 1 μs, then Q is the maximum accelerated charge in 1 μs.

Q equals the integral of i with respect to t, over the lesser of 1 μs or the time duration of the beam pulse (Q = ∫ idt), where i is beam current in amperes and t is time in seconds.

2. ‘Peak power’ = (peak potential in volts) × (peak beam current in amperes).

3. In machines based on microwave accelerating cavities, the time duration of the beam pulse is the lesser of 1 μs or the duration of the bunched beam packet resulting from one microwave modulator pulse.

4. In machines based on microwave accelerating cavities, the peak beam current is the average current in the time duration of a bunched beam packet.

3A225 Frequency changers or generators, other than those specified in 0B001.b.13., usable as a variable or fixed frequency motor drive, having all of the following characteristics:

N.B.1. "Software" specially designed to enhance or release the performance of a frequency changer or generator to meet the characteristics of 3A225 is specified in 3D225.

N.B.2. "Technology" in the form of codes or keys to enhance or release the performance of a frequency changer or generator to meet the characteristics of 3A225 is specified in 3E225.

Multiphase output providing a power of 40 VA or greater;

Operating at a frequency of 600 Hz or more; and

Frequency control better (less) than 0,2 %.

Note: 3A225 does not control frequency changers or generators if they have hardware, "software" or "technology" constraints that limit the performance to less than that specified above, provided they meet any of the following:

1. They need to be returned to the original manufacturer to make the enhancements or release the constraints;

2. They require "software" as specified in 3D225 to enhance or release the performance to meet the characteristics of 3A225; or

3. They require "technology" in the form of keys or codes as specified in 3E225 to enhance or release the performance to meet the characteristics of 3A225.

Technical Notes:

1. Frequency changers in 3A225 are also known as converters or inverters.

2. Frequency changers in 3A225 may be marketed as Generators, Electronic Test Equipment, AC Power Supplies, Variable Speed Motors Drives, Variable Speed Drives (VSDs), Variable Frequency Drives (VFDs), Adjustable Frequency Drives (AFDs), or Adjustable Speed Drives (ASDs).

3A226 High-power direct current power supplies, other than those specified in 0B001.j.6., having both of the following characteristics:

Capable of continuously producing, over a time period of 8 hours, 100 V or greater with current output of 500 A or greater; and

Current or voltage stability better than 0,1 % over a time period of 8 hours.

3A227 High-voltage direct current power supplies, other than those specified in 0B001.j.5., having both of the following characteristics:

Capable of continuously producing, over a time period of 8 hours, 20 kV or greater with current output of 1 A or greater; and

Current or voltage stability better than 0,1 % over a time period of 8 hours.

3A228 Switching devices, as follows:

Cold-cathode tubes, whether gas filled or not, operating similarly to a spark gap, having all of the following characteristics:

Containing three or more electrodes;

Anode peak voltage rating of 2,5 kV or more;

Anode peak current rating of 100 A or more; and

Anode delay time of 10 μs or less;

Note: 3A228.a. includes gas krytron tubes and vacuum sprytron tubes.

Triggered spark-gaps having both of the following characteristics:

An anode delay time of 15 μs or less; and

Rated for a peak current of 500 A or more;

Modules or assemblies with a fast switching function, other than those specified in 3A001.g. or 3A001.h., having all of the following characteristics:

Anode peak voltage rating greater than 2 kV;

Anode peak current rating of 500 A or more; and

Turn-on time of 1 μs or less.

3A229 High-current pulse generators as follows:

N.B. SEE ALSO MILITARY GOODS CONTROLS.

Detonator firing sets (initiator systems, firesets), including electronically-charged, explosively-driven and optically-driven firing sets, other than those specified in 1A007.a., designed to drive multiple controlled detonators specified in 1A007.b.;

Modular electrical pulse generators (pulsers) having all of the following characteristics:

Designed for portable, mobile, or ruggedized-use;

Capable of delivering their energy in less than 15 μs into loads of less than 40 ohms;

Having an output greater than 100 A;

No dimension greater than 30 cm;

Weight less than 30 kg; and

Specified for use over an extended temperature range 223 K (–50 °C) to 373 K (100 °C) or specified as suitable for aerospace applications.

Note: 3A229.b. includes xenon flash-lamp drivers.

Micro-firing units having all of the following characteristics:

No dimension greater than 35 mm;

Voltage rating of equal to or greater than 1 kV; and

Capacitance of equal to or greater than 100 nF.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

3A230 High-speed pulse generators, and ‘pulse heads’ therefor, having both of the following characteristics:

Output voltage greater than 6 V into a resistive load of less than 55 ohms; and

‘Pulse transition time’ less than 500 ps.

Technical Notes:

1. In 3A230, ‘pulse transition time’ is defined as the time interval between 10 % and 90 % voltage amplitude.

2. ‘Pulse heads’ are impulse forming networks designed to accept a voltage step function and shape it into a variety of pulse forms that can include rectangular, triangular, step, impulse, exponential, or monocycle types. ‘Pulse heads’ can be an integral part of the pulse generator, they can be a plug-in module to the device or they can be an externally connected device.

3A231 Neutron generator systems, including tubes, having both of the following characteristics:

Designed for operation without an external vacuum system; and

Utilising any of the following:

Electrostatic acceleration to induce a tritium-deuterium nuclear reaction; or

Electrostatic acceleration to induce a deuterium-deuterium nuclear reaction and capable of an output of 3 × 109 neutrons/s or greater.

3A232 Multipoint initiation systems, other than those specified in 1A007, as follows:

N.B. SEE ALSO MILITARY GOODS CONTROLS.

N.B. See 1A007.b. for detonators.

Not used;

Arrangements using single or multiple detonators designed to nearly simultaneously initiate an explosive surface over an area greater than 5 000 mm² from a single firing signal with an initiation timing spread over the surface of less than 2,5 μs.

Note : 3A232 does not control detonators using only primary explosives, such as lead azide.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

3A233 Mass spectrometers, other than those specified in 0B002.g., capable of measuring ions of 230 u or greater and having a resolution of better than 2 parts in 230, as follows, and ion sources therefor:

Inductively coupled plasma mass spectrometers (ICP/MS);

Glow discharge mass spectrometers (GDMS);

Thermal ionisation mass spectrometers (TIMS);

Electron bombardment mass spectrometers having both of the following features:

A molecular beam inlet system that injects a collimated beam of analyte molecules into a region of the ion source where the molecules are ionised by an electron beam; and

One or more ‘cold traps’ that can be cooled to a temperature of 193 K (–80 °C);

Not used;

Mass spectrometers equipped with a microfluorination ion source designed for actinides or actinide fluorides.

Technical Notes:

1. Electron bombardment mass spectrometers in 3A233.d. are also known as electron impact mass spectrometers or electron ionisation mass spectrometers.

2. In 3A233.d.2., a ‘cold trap’ is a device that traps gas molecules by condensing or freezing them on cold surfaces. For the purposes of 3A233.d.2., a closed-loop gaseous helium cryogenic vacuum pump is not a ‘cold trap’.

3A234 Striplines to provide low inductance path to detonators with the following characteristics:

Voltage rating greater than 2 kV; and

Inductance of less than 20 nH.

3B Test, Inspection and Production Equipment

3B001 Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor:

N.B. SEE ALSO 2B226

Equipment designed for epitaxial growth as follows:

Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than ± 2,5 % across a distance of 75 mm or more;

Note: 3B001.a.1. includes Atomic Layer Epitaxy (ALE) equipment.

Metal Organic Chemical Vapour Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminium, gallium, indium, arsenic, phosphorus, antimony, or nitrogen;

Molecular beam epitaxial growth equipment using gas or solid sources;

Equipment designed for ion implantation and having any of the following:

Not used;

Being designed and optimised to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant;

Direct write capability;

A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or

Being designed and optimised to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600 °C or greater;

Not used;

Automatic loading multi-chamber central wafer handling systems having all of the following:

Interfaces for wafer input and output, to which more than two functionally different ‘semiconductor process tools’ specified in 3B001.a.1., 3B001.a.2., 3B001.a.3. or 3B001.b. are designed to be connected; and

Designed to form an integrated system in a vacuum environment for ‘sequential multiple wafer processing’;

Note: 3B001.e. does not control automatic robotic wafer handling systems specially designed for parallel wafer processing.

Technical Notes:

1. For the purpose of 3B001.e., ‘semiconductor process tools’ refers to modular tools that provide physical processes for semiconductor production that are functionally different, such as deposition, implant or thermal processing.

2. For the purpose of 3B001.e., ‘sequential multiple wafer processing’ means the capability to process each wafer in different ‘semiconductor process tools’, such as by transferring each wafer from one tool to a second tool and on to a third tool with the automatic loading multi-chamber central wafer handling systems.

Lithography equipment as follows:

Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:

a. A light source wavelength shorter than 193 nm; or

b. Capable of producing a pattern with a ‘Minimum Resolvable Feature size’ (MRF) of 45 nm or less;

Technical Note:

The ‘Minimum Resolvable Feature size’ (MRF) is calculated by the following formula:

where the K factor = 0,35

Imprint lithography equipment capable of producing features of 45 nm or less;

Note: 3B001.f.2. includes:

— Micro contact printing tools

— Hot embossing tools

— Nano-imprint lithography tools

— Step and flash imprint lithography (S-FIL) tools

Equipment specially designed for mask making having all of the following:

a. A deflected focussed electron beam, ion beam or "laser" beam; and

b. Having any of the following:

1. A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or

2. Not used;

3. A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;

4. Equipment designed for device processing using direct writing methods, having all of the following:

a. A deflected focused electron beam; and

b. Having any of the following:

1. A minimum beam size equal to or smaller than 15 nm; or

2. An overlay error less than 27 nm (mean + 3 sigma);

Masks and reticles, designed for integrated circuits specified in 3A001;

Multi-layer masks with a phase shift layer not specified in 3B001.g. and designed to be used by lithography equipment having a light source wavelength less than 245 nm;

Note: 3B001.h. does not control multi-layer masks with a phase shift layer designed for the fabrication of memory devices not specified in 3A001.

N.B. For masks and reticles, specially designed for optical sensors, see 6B002.

Imprint lithography templates designed for integrated circuits specified in 3A001.

Mask "substrate blanks" with multilayer reflector structure consisting of molybdenum and silicon, and having all of the following:

Specially designed for ‘Extreme Ultraviolet’ (‘EUV’) lithography; and

Compliant with SEMI Standard P37.

Technical Note:

‘Extreme Ultraviolet’ (‘EUV’) refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.

3B002 Test equipment specially designed for testing finished or unfinished semiconductor devices as follows and specially designed components and accessories therefor:

For testing S-parameters of items specified in 3A001.b.3.;

Not used;

For testing items specified in 3A001.b.2.

3C Materials

3C001 Hetero-epitaxial materials consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following:

Silicon (Si);

Germanium (Ge);

Silicon carbide (SiC); or

"III/V compounds" of gallium or indium.

Note: 3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.

3C002 Resist materials as follows and "substrates" coated with the following resists:

Resists designed for semiconductor lithography as follows:

Positive resists adjusted (optimised) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;

Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm;

All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm² or better;

Not used;

All resists optimised for surface imaging technologies;

All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process.

3C003 Organo-inorganic compounds as follows:

Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %;

Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %.

Note: 3C003 only controls compounds whose metallic, partly metallic or non-metallic element is directly linked to carbon in the organic part of the molecule.

3C004 Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen.

Note: 3C004 does not control hydrides containing 20 % molar or more of inert gases or hydrogen.

3C005 High resistivity materials as follows:

Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C;

Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10 000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), or aluminium gallium nitride (AlGaN) on the surface of the "substrate".

3C006 Materials, not specified in 3C001, consisting of a "substrate" specified in 3C005 with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.

3D Software

3D001 "Software" specially designed for the "development" or "production" of equipment specified in 3A001.b. to 3A002.h. or 3B.

3D002 "Software" specially designed for the "use" of equipment specified in 3B001.a. to f., 3B002 or 3A225

3D003 ‘Computational lithography’ "software" specially designed for the "development" of patterns on EUV-lithography masks or reticles.

Technical Note:

‘Computational lithography’ is the use of computer modelling to predict, correct, optimise and verify imaging performance of the lithography process over a range of patterns, processes, and system conditions.

3D004 "Software" specially designed for the "development" of equipment specified in 3A003.

3D005 "Software" specially designed to restore normal operation of a microcomputer, "microprocessor microcircuit" or "microcomputer microcircuit" within 1 ms after an Electromagnetic Pulse (EMP) or Electrostatic Discharge (ESD) disruption, without loss of continuation of operation.

3D101 "Software" specially designed or modified for the "use" of equipment specified in 3A101.b.

3D225 "Software" specially designed to enhance or release the performance of frequency changers or generators to meet the characteristics of 3A225.

3E Technology

3E001 "Technology" according to the General Technology Note for the "development" or "production" of equipment or materials specified in 3A, 3B or 3C;

Note 1: 3E001 does not control "technology" for equipment or components specified in 3A003.

Note 2: 3E001 does not control "technology" for integrated circuits specified in 3A001.a.3. to 3A001.a.12., having all of the following:

a. Using "technology" at or above 0,130 μm; and

b. Incorporating multi-layer structures with three or fewer metal layers.

Note 3: 3E001 does not control ‘Process Design Kits’ (‘PDKs’) unless they include libraries implementing functions or technologies for items specified in 3A001.

Technical Note:

A ‘Process Design Kit’ (‘PDK’) is a software tool provided by a semiconductor manufacturer to ensure that the required design practices and rules are taken into account in order to successfully produce a specific integrated circuit design in a specific semiconductor process, in accordance with technological and manufacturing constraints (each semiconductor manufacturing process has its particular ‘PDK’).

3E002 "Technology" according to the General Technology Note, other than that specified in 3E001, for the "development" or "production" of a "microprocessor microcircuit", "microcomputer microcircuit" or microcontroller microcircuit core, having an arithmetic logic unit with an access width of 32 bits or more and any of the following features or characteristics:

A ‘vector processor unit’ designed to perform more than two calculations on ‘floating-point’ vectors (one-dimensional arrays of 32-bit or larger numbers) simultaneously;

Technical Note:

A ‘vector processor unit’ is a processor element with built-in instructions that perform multiple calculations on ‘floating-point’ vectors (one-dimensional arrays of 32-bit or larger numbers) simultaneously, having at least one vector arithmetic logic unit and vector registers of at least 32 elements each.

Designed to perform more than four 64-bit or larger ‘floating-point’ operation results per cycle; or

Designed to perform more than eight 16-bit ‘fixed-point’ multiply-accumulate results per cycle (e.g., digital manipulation of analogue information that has been previously converted into digital form, also known as digital "signal processing").

Technical Notes:

1. For the purpose of 3E002.a. and 3E002.b., ‘floating-point’ is defined by IEEE-754.

2. For the purpose of 3E002.c., ‘fixed-point’ refers to a fixed-width real number with both an integer component and a fractional component, and which does not include integer-only formats.

Note 1: 3E002 does not control "technology" for multimedia extensions.

Note 2: 3E002 does not control "technology" for micro-processor cores, having all of the following:

a. Using "technology" at or above 0,130 μm; and

b. Incorporating multi-layer structures with five or fewer metal layers.

Note 3: 3E002 includes "technology" for the "development" or "production" of digital signal processors and digital array processors.

3E003 Other "technology" for the "development" or "production" of the following:

Substrates of silicon carbide for electronic components;

"Vacuum electronic devices" operating at frequencies of 31,8 GHz or higher.

Vacuum microelectronic devices;

Hetero-structure semiconductor electronic devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices;

Note: 3E003.b. does not control "technology" for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz.

"Superconductive" electronic devices;

Substrates of films of diamond for electronic components.

Substrates of silicon-on-insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;

3E004 "Technology" "required" for the slicing, grinding and polishing of 300 mm diameter silicon wafers to achieve a ‘Site Front least sQuares Range’ (‘SFQR’) less than or equal to 20 nm at any site of 26 mm × 8 mm on the front surface of the wafer and an edge exclusion less than or equal to 2 mm.

Technical Note:

For the purposes of 3E004 ‘SFQR’ is the range of maximum deviation and minimum deviation from front reference plane, calculated by least square method with all front surface data including site boundary within a site.

3E101 "Technology" according to the General Technology Note for the "use" of equipment or "software" specified in 3A001.a.1. or 2., 3A101, 3A102 or 3D101.

3E102 "Technology" according to the General Technology Note for the "development" of "software" specified in 3D101.

3E201 "Technology" according to the General Technology Note for the "use" of equipment specified in 3A001.e.2., 3A001.e.3., 3A001.g., 3A201, 3A225 to 3A234.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

3E225 "Technology", in the form of codes or keys, to enhance or release the performance of frequency changers or generators to meet the characteristics of 3A225.

Category 4 - COMPUTERS

Note 1: Computers, related equipment and "software" performing telecommunications or "local area network" functions must also be evaluated against the performance characteristics of Category 5, Part 1 (Telecommunications).

Note 2: Control units which directly interconnect the buses or channels of central processing units, ‘main storage’ or disk controllers are not regarded as telecommunications equipment described in Category 5, Part 1 (Telecommunications).

N.B. For the control status of "software" specially designed for packet switching, see 5D001.

Technical Note:

‘Main storage’ is the primary storage for data or instructions for rapid access by a central processing unit. It consists of the internal storage of a "digital computer" and any hierarchical extension thereto, such as cache storage or non-sequentially accessed extended storage.

4A Systems, Equipment and Components

4A001 Electronic computers and related equipment, having any of the following and "electronic assemblies" and specially designed components therefor:

N.B. SEE ALSO 4A101.

Specially designed to have any of the following:

Rated for operation at an ambient temperature below 228 K (–45 °C) or above 358 K (85 °C); or

Note: 4A001.a.1. does not control computers specially designed for civil automobile, railway train or "civil aircraft" applications.

Radiation hardened to exceed any of the following specifications:

a.	Total Dose	5 × 10³ Gy (silicon);
b.	Dose Rate Upset	5 × 10⁶ Gy (silicon)/s; or
c.	Single Event Upset	1 × 10^–8 Error/bit/day;

Note: 4A001.a.2. does not control computers specially designed for "civil aircraft" applications.

Not used.

4A003 "Digital computers", "electronic assemblies", and related equipment therefor, as follows and specially designed components therefor:

Note 1: 4A003 includes the following:

— ‘Vector processors’;

— Array processors;

— Digital signal processors;

— Logic processors;

— Equipment designed for "image enhancement".

Note 2: The control status of the "digital computers" and related equipment described in 4A003 is determined by the control status of other equipment or systems provided:

a. The "digital computers" or related equipment are essential for the operation of the other equipment or systems;

b. The "digital computers" or related equipment are not a "principal element" of the other equipment or systems; and

N.B.1. The control status of "signal processing" or "image enhancement" equipment specially designed for other equipment with functions limited to those required for the other equipment is determined by the control status of the other equipment even if it exceeds the "principal element" criterion.

N.B.2. For the control status of "digital computers" or related equipment for telecommunications equipment, see Category 5, Part 1 (Telecommunications).

c. The "technology" for the "digital computers" and related equipment is determined by 4E.

Not used;

"Digital computers" having an "Adjusted Peak Performance" ("APP") exceeding 29 Weighted TeraFLOPS (WT);

"Electronic assemblies" specially designed or modified for enhancing performance by aggregation of processors so that the "APP" of the aggregation exceeds the limit specified in 4A003.b.;

Note 1: 4A003.c. controls only "electronic assemblies" and programmable interconnections not exceeding the limit specified in 4A003.b. when shipped as unintegrated "electronic assemblies".

Note 2: 4A003.c. does not control "electronic assemblies" specially designed for a product or family of products whose maximum configuration does not exceed the limit specified in 4A003.b.

Not used;

Equipment specially designed for aggregating the performance of "digital computers" by providing external interconnections which allows communications at unidirectional data rates exceeding 2,0 Gbyte/s per link.

Note: 4A003.g. does not control internal interconnection equipment (e.g. backplanes, buses), passive interconnection equipment, "network access controllers" or "communications channel controllers".

4A004 Computers as follows and specially designed related equipment, "electronic assemblies" and components therefor:

‘Systolic array computers’;

‘Neural computers’;

‘Optical computers’.

Technical Notes:

1. ‘Systolic array computers’ are computers where the flow and modification of the data is dynamically controllable at the logic gate level by the user.

2. ‘Neural computers’ are computational devices designed or modified to mimic the behaviour of a neuron or a collection of neurons, i.e., computational devices which are distinguished by their hardware capability to modulate the weights and numbers of the interconnections of a multiplicity of computational components based on previous data.

3. ‘Optical computers’ are computers designed or modified to use light to represent data and whose computational logic elements are based on directly coupled optical devices.

4A005 Systems, equipment, and components therefor, specially designed or modified for the generation, command and control, or delivery of "intrusion software".

4A101 Analogue computers, "digital computers" or digital differential analysers, other than those specified in 4A001.a.1., which are ruggedized and designed or modified for use in space launch vehicles specified in 9A004 or sounding rockets specified in 9A104.

4A102 Hybrid computers specially designed for modelling, simulation or design integration of space launch vehicles specified in 9A004 or sounding rockets specified in 9A104.

Note: This control only applies when the equipment is supplied with "software" specified in 7D103 or 9D103.

4B Test, Inspection and Production Equipment

None.

4C Materials

None.

4D Software

Note: The control status of "software" for equipment described in other Categories is dealt with in the appropriate Category.

4D001 "Software" as follows:

"Software" specially designed or modified for the "development" or "production" of equipment or "software" specified in 4A001 to 4A004, or 4D.

"Software", other than that specified in 4D001.a., specially designed or modified for the "development" or "production" of equipment as follows:

"Digital computers" having an "Adjusted Peak Performance" ("APP") exceeding 15 Weighted TeraFLOPS (WT);

"Electronic assemblies" specially designed or modified for enhancing performance by aggregation of processors so that the "APP" of the aggregation exceeds the limit in 4D001.b.1.

4D002 Not used

4D003 Not used

4D004 "Software" specially designed or modified for the generation, command and control, or delivery of "intrusion software".

Note: 4D004 does not control "software" specially designed and limited to provide "software" updates or upgrades meeting all the following:

The update or upgrade operates only with the authorisation of the owner or administrator of the system receiving it; and

After the update or upgrade, the "software" updated or upgraded is not any of the following:

"Software" specified in 4D004; or

"Intrusion software".

4E Technology

4E001

"Technology" according to the General Technology Note, for the "development", "production" or "use" of equipment or "software" specified in 4A or 4D.

"Technology", according to the General Technology Note, other than that specified in 4E001.a., for the "development" or "production" of equipment as follows:

"Digital computers" having an "Adjusted Peak Performance" ("APP") exceeding 15 Weighted TeraFLOPS (WT);

"Electronic assemblies" specially designed or modified for enhancing performance by aggregation of processors so that the "APP" of the aggregation exceeds the limit in 4E001.b.1.

"Technology" for the "development" of "intrusion software".

Note 1: 4E001.a. and 4E001.c. do not control "vulnerability disclosure" or "cyber incident response".

Note 2: Note 1 does not diminish the rights of the competent authority of the EU Member State in which the exporter is established to ascertain compliance with 4E001.a. and 4E001.c.

TECHNICAL NOTE ON "ADJUSTED PEAK PERFORMANCE" ("APP")

"APP" is an adjusted peak rate at which "digital computers" perform 64-bit or larger floating point additions and multiplications.

"APP" is expressed in Weighted TeraFLOPS (WT), in units of 10¹² adjusted floating point operations per second.

Abbreviations used in this Technical Note

n	number of processors in the "digital computer"

i	processor number (i,...n)

ti	processor cycle time (t_i = 1/F_i)

Fi	processor frequency

Ri	peak floating point calculating rate

Wi	architecture adjustment factor

Outline of "APP" calculation method

1. For each processor i, determine the peak number of 64-bit or larger floating point operations, FPOi, performed per cycle for each processor in the "digital computer".

Note: In determining FPO, include only 64-bit or larger floating point additions or multiplications. All floating point operations must be expressed in operations per processor cycle; operations requiring multiple cycles may be expressed in fractional results per cycle. For processors not capable of performing calculations on floating point operands of 64-bit or more, the effective calculating rate R is zero.

2. Calculate the floating point rate R for each processor Ri = FPO_i/t_i.

3. Calculate "APP" as "APP" = W₁ × R₁ + W₂ × R₂ + … + W_n × R_n.

4. For ‘vector processors’, W_i = 0,9. For non-‘vector processors’, W_i = 0,3.

Note 1: For processors that perform compound operations in a cycle, such as addition and multiplication, each operation is counted.

Note 2: For a pipelined processor the effective calculating rate R is the faster of the pipelined rate, once the pipeline is full, or the non-pipelined rate.

Note 3: The calculating rate R of each contributing processor is to be calculated at its maximum value theoretically possible before the "APP" of the combination is derived. Simultaneous operations are assumed to exist when the computer manufacturer claims concurrent, parallel, or simultaneous operation or execution in a manual or brochure for the computer.

Note 4: Do not include processors that are limited to input/output and peripheral functions (e.g., disk drive, communication and video display) when calculating "APP".

Note 5: "APP" values are not to be calculated for processor combinations (inter)connected by "Local Area Networks", Wide Area Networks, I/O shared connections/devices, I/O controllers and any communication interconnection implemented by "software".

Note 6: "APP" values must be calculated for processor combinations containing processors specially designed to enhance performance by aggregation, operating simultaneously and sharing memory;

Technical Notes:

1. Aggregate all processors and accelerators operating simultaneously and located on the same die.

2. Processor combinations share memory when any processor is capable of accessing any memory location in the system through the hardware transmission of cache lines or memory words, without the involvement of any software mechanism, which may be achieved using "electronic assemblies" specified in 4A003.c.

Note 7: A ‘vector processor’ is defined as a processor with built-in instructions that perform multiple calculations on floating-point vectors (one-dimensional arrays of 64-bit or larger numbers) simultaneously, having at least 2 vector functional units and at least 8 vector registers of at least 64 elements each.

Category 5 - TELECOMMUNICATIONS AND "INFORMATION SECURITY"

Category 5 - TELECOMMUNICATIONS AND "INFORMATION SECURITY" consists out of 2 parts.

Part 1 - TELECOMMUNICATIONS

Note 1: The control status of components, test and "production" equipment and "software" therefor which are specially designed for telecommunications equipment or systems is determined in Category 5, Part 1.

N.B. For "lasers" specially designed for telecommunications equipment or systems, see 6A005.

Note 2: "Digital computers", related equipment or "software", when essential for the operation and support of telecommunications equipment described in this Category, are regarded as specially designed components, provided they are the standard models customarily supplied by the manufacturer. This includes operation, administration, maintenance, engineering or billing computer systems.

Part 2 - "INFORMATION SECURITY"

Note 1: Not used.

Note 2: Category 5, Part 2 does not control products when accompanying their user for the user’s personal use.

Note 3: Cryptography Note

5A002, 5D002.a.1., 5D002.b. and 5D002.c.1. do not control items as follows:

a. Items that meet all of the following:

1. Generally available to the public by being sold, without restriction, from stock at retail selling points by means of any of the following:

a. Over-the-counter transactions;

b. Mail order transactions;

c. Electronic transactions; or

d. Telephone call transactions;

2. The cryptographic functionality cannot easily be changed by the user;

3. Designed for installation by the user without further substantial support by the supplier; and

4. When necessary, details of the goods are accessible and will be provided, upon request, to the competent authorities of the EU Member State in which the exporter is established in order to ascertain compliance with conditions described in paragraphs 1. to 3. above;

b. Hardware components or ‘executable software’, of existing items described in paragraph a. of this Note, that have been designed for these existing items, meeting all of the following:

1. "Information security" is not the primary function or set of functions of the component or ‘executable software’;

2. The component or ‘executable software’ does not change any cryptographic functionality of the existing items, or add new cryptographic functionality to the existing items;

3. The feature set of the component or ‘executable software’ is fixed and is not designed or modified to customer specification; and

4. When necessary as determined by the competent authorities of the EU Member State in which the exporter is established, details of the component or ‘executable software’ and details of relevant end-items are accessible and will be provided to the competent authority upon request, in order to ascertain compliance with conditions described above.

Technical Note:

For the purpose of the Cryptography Note, ‘executable software’ means "software" in executable form, from an existing hardware component excluded from 5A002 by the Cryptography Note.

Note: ‘Executable software’ does not include complete binary images of the "software" running on an end-item.

Note to the Cryptography Note:

1. To meet paragraph a. of Note 3, all of the following must apply:

a. The item is of potential interest to a wide range of individuals and businesses; and

b. The price and information about the main functionality of the item are available before purchase without the need to consult the vendor or supplier. A simple price enquiry is not considered to be a consultation.

2. In determining eligibility of paragraph a. of Note 3, competent authorities may take into account relevant factors such as quantity, price, required technical skill, existing sales channels, typical customers, typical use or any exclusionary practices of the supplier.

5A1 Systems, Equipment and Components

5A001 Telecommunications systems, equipment, components and accessories as follows:

Any type of telecommunications equipment having any of the following characteristics, functions or features:

Specially designed to withstand transitory electronic effects or electromagnetic pulse effects, both arising from a nuclear explosion;

Specially hardened to withstand gamma, neutron or ion radiation;

Specially designed to operate below 218 K (–55 °C); or

Specially designed to operate above 397 K (124 °C);

Note 1: 5A001.a.3. and 5A001.a.4. control only electronic equipment.

Note 2: 5A001.a.2., 5A001.a.3. and 5A001.a.4. do not control equipment designed or modified for use on board satellites.

Telecommunication systems and equipment, and specially designed components and accessories therefor, having any of the following characteristics, functions or features:

Being underwater untethered communications systems having any of the following:

a. An acoustic carrier frequency outside the range from 20 kHz to 60 kHz;

b. Using an electromagnetic carrier frequency below 30 kHz;

c. Using electronic beam steering techniques; or

d. Using "lasers" or light-emitting diodes (LEDs) with an output wavelength greater than 400 nm and less than 700 nm, in a "local area network";

Being radio equipment operating in the 1,5 MHz to 87,5 MHz band and having all of the following:

a. Automatically predicting and selecting frequencies and "total digital transfer rates" per channel to optimise the transmission; and

b. Incorporating a linear power amplifier configuration having a capability to support multiple signals simultaneously at an output power of 1 kW or more in the frequency range of 1,5 MHz or more but less than 30 MHz, or 250 W or more in the frequency range of 30 MHz or more but not exceeding 87,5 MHz, over an "instantaneous bandwidth" of one octave or more and with an output harmonic and distortion content of better than -80 dB;

Being radio equipment employing "spread spectrum" techniques, including "frequency hopping" techniques, other than those specified in 5A001.b.4. and having any of the following:

a. User programmable spreading codes; or

b. A total transmitted bandwidth which is 100 or more times the bandwidth of any one information channel and in excess of 50 kHz;

Note: 5A001.b.3.b. does not control radio equipment specially designed for use with any of the following:

a. Civil cellular radio-communications systems; or

b. Fixed or mobile satellite earth stations for commercial civil telecommunications.

Note: 5A001.b.3 does not control equipment designed to operate at an output power of 1 W or less.

Being radio equipment employing ultra-wideband modulation techniques, having user programmable channelising codes, scrambling codes or network identification codes and having any of the following:

a. A bandwidth exceeding 500 MHz; or

b. A "fractional bandwidth" of 20 % or more;

Being digitally controlled radio receivers having all of the following:

a. More than 1 000 channels;

b. A ‘channel switching time’ of less than 1 ms;

c. Automatic searching or scanning of a part of the electromagnetic spectrum; and

d. Identification of the received signals or the type of transmitter; or

Note: 5A001.b.5. does not control radio equipment specially designed for use with civil cellular radio-communications systems.

Technical Note:

‘Channel switching time’ means the time (i.e., delay) to change from one receiving frequency to another, to arrive at or within ±0,05 % of the final specified receiving frequency. Items having a specified frequency range of less than ±0,05 % around their centre frequency are defined to be incapable of channel frequency switching.

Employing functions of digital "signal processing" to provide ‘voice coding’ output at rates of less than 700 bit/s.

Technical Notes:

1. For variable rate ‘voice coding’, 5A001.b.6. applies to the ‘voice coding’ output of continuous speech.

2. For the purposes of 5A001.b.6., ‘voice coding’ is defined as the technique to take samples of human voice and then convert these samples into a digital signal, taking into account specific characteristics of human speech.

Optical fibres of more than 500 m in length and specified by the manufacturer as being capable of withstanding a ‘proof test’ tensile stress of 2 × 10⁹ N/m² or more;

N.B. For underwater umbilical cables, see 8A002.a.3.

Technical Note:

‘Proof Test’: on-line or off-line production screen testing that dynamically applies a prescribed tensile stress over a 0,5 to 3 m length of fibre at a running rate of 2 to 5 m/s while passing between capstans approximately 150 mm in diameter. The ambient temperature is a nominal 293 K (20 °C) and relative humidity 40 %. Equivalent national standards may be used for executing the proof test.

‘Electronically steerable phased array antennae’ as follows:

Rated for operation above 31,8 GHz, but not exceeding 57 GHz, and having an Effective Radiated Power (ERP) equal to or greater than +20 dBm (22,15 dBm Effective Isotropic Radiated Power (EIRP));

Rated for operation above 57 GHz, but not exceeding 66 GHz, and having an ERP equal to or greater than +24 dBm (26,15 dBm EIRP);

Rated for operation above 66 GHz, but not exceeding 90 GHz, and having an ERP equal to or greater than +20 dBm (22,15 dBm EIRP);

Rated for operation above 90 GHz;

Note 1: 5A001.d. does not control ‘electronically steerable phased array antennae’ for landing systems with instruments meeting ICAO standards covering Microwave Landing Systems (MLS).

Note 2: 5A001.d. does not control antennae specially designed for any of the following:

a. Civil cellular or WLAN radio-communications systems;

b. IEEE 802.15 or wireless HDMI; or

c. Fixed or mobile satellite earth stations for commercial civil telecommunications.

Technical Note:

For the purposes of 5A001.d. ‘electronically steerable phased array antenna’ is an antenna which forms a beam by means of phase coupling, (i.e., the beam direction is controlled by the complex excitation coefficients of the radiating elements) and the direction of that beam can be varied (both in transmission and reception) in azimuth or in elevation, or both, by application of an electrical signal.

Radio direction finding equipment operating at frequencies above 30 MHz and having all of the following, and specially designed components therefor:

"Instantaneous bandwidth" of 10 MHz or more; and

Capable of finding a Line Of Bearing (LOB) to non-cooperating radio transmitters with a signal duration of less than 1 ms;

Mobile telecommunications interception or jamming equipment, and monitoring equipment therefor, as follows, and specially designed components therefor:

Interception equipment designed for the extraction of voice or data, transmitted over the air interface;

Interception equipment not specified in 5A001.f.1., designed for the extraction of client device or subscriber identifiers (e.g., IMSI, TIMSI or IMEI), signalling, or other metadata transmitted over the air interface;

Jamming equipment specially designed or modified to intentionally and selectively interfere with, deny, inhibit, degrade or seduce mobile telecommunication services and performing any of the following:

a. Simulate the functions of Radio Access Network (RAN) equipment;

b. Detect and exploit specific characteristics of the mobile telecommunications protocol employed (e.g., GSM); or

c. Exploit specific characteristics of the mobile telecommunications protocol employed (e.g. GSM);

RF monitoring equipment designed or modified to identify the operation of items specified in 5A001.f.1., 5A001.f.2. or 5A001.f.3.;

Note: 5A001.f.1. and 5A001.f.2. do not control any of the following:

a. Equipment specially designed for the interception of analogue Private Mobile Radio (PMR), IEEE 802.11 WLAN;

b. Equipment designed for mobile telecommunications network operators; or

c. Equipment designed for the "development" or "production" of mobile telecommunications equipment or systems.

N.B.1. SEE ALSO MILITARY GOODS CONTROLS.

N.B.2. For radio receivers see 5A001.b.5.

Passive Coherent Location (PCL) systems or equipment, specially designed for detecting and tracking moving objects by measuring reflections of ambient radio frequency emissions, supplied by non-radar transmitters;

echnical Note:

Non-radar transmitters may include commercial radio, television or cellular telecommunications base stations.

Note: 5A001.g. does not control any of the following:

a. Radio-astronomical equipment; or

b. Systems or equipment, that require any radio transmission from the target.

Counter Improvised Explosive Device (IED) equipment and related equipment, as follows:

Radio Frequency (RF) transmitting equipment, not specified in 5A001.f., designed or modified for prematurely activating or preventing the initiation of Improvised Explosive Devices (IEDs);

Equipment using techniques designed to enable radio communications in the same frequency channels on which co-located equipment specified in 5A001.h.1. is transmitting;

N.B. SEE ALSO MILITARY GOODS CONTROLS.

Not used;

Internet Protocol (IP) network communications surveillance systems or equipment, and specially designed components therefor, having all of the following:

Performing all of the following on a carrier class Internet Protocol (IP) network (e.g., national grade IP backbone):

a. Analysis at the application layer (e.g., Layer 7 of Open Systems Interconnection (OSI) model (ISO/IEC 7498-1));

b. Extraction of selected metadata and application content (e.g., voice, video, messages, attachments); and

c. Indexing of extracted data; and

Being specially designed to carry out all of the following:

a. Execution of searches on the basis of "hard selectors"; and

b. Mapping of the relational network of an individual or of a group of people.

Note: 5A001.j. does not control systems or equipment, specially designed for any of the following:

a. Marketing purpose;

b. Network Quality of Service (QoS); or

c. Quality of Experience (QoE).

5A101 Telemetry and telecontrol equipment, including ground equipment, designed or modified for ‘missiles’.

Technical Note:

In 5A101 ‘missile’ means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km.

Note: 5A101 does not control:

a. Equipment designed or modified for manned aircraft or satellites;

b. Ground based equipment designed or modified for terrestrial or marine applications;

c. Equipment designed for commercial, civil or ‘Safety of Life’ (e.g., data integrity, flight safety) GNSS services;

5A2 Systems, Equipment and Components

5A002 "Information security" systems, equipment and components, as follows:

N.B. For the control of "satellite navigation system" receiving equipment containing or employing decryption, see 7A005 and for related decryption "software" and "technology" see 7D005 and 7E001.

Designed or modified to use ‘cryptography for data confidentiality’ having a ‘described security algorithm’, where that cryptographic capability is usable, has been activated, or can be activated by any means other than secure "cryptographic activation", as follows:

Technical Notes:

1. For the purposes of 5A002.a., ‘cryptography for data confidentiality’ means "cryptography" that employs digital techniques and performs any cryptographic function other than any of the following:

a. "Authentication";

b. Digital signature;

c. Data integrity;

d. Non-repudiation;

e. Digital rights management, including the execution of copy-protected "software";

f. Encryption or decryption in support of entertainment, mass commercial broadcasts or medical records management; or

g. Key management in support of any function described in paragraph a. to f. above.

2. For the purposes of 5A002.a., ‘described security algorithm’ means any of the following:

a. A "symmetric algorithm" employing a key length in excess of 56 bits, not including parity bits;

b. An "asymmetric algorithm" where the security of the algorithm is based on any of the following:

1. Factorisation of integers in excess of 512 bits (e.g., RSA);

2. Computation of discrete logarithms in a multiplicative group of a finite field of size greater than 512 bits (e.g., Diffie-Hellman over Z/pZ); or

3. Discrete logarithms in a group other than mentioned in paragraph b.2. in excess of 112 bits (e.g., Diffie-Hellman over an elliptic curve); or

c. An "asymmetric algorithm" where the security of the algorithm is based on any of the following:

1. Shortest vector or closest vector problems associated with lattices (e.g., NewHope, Frodo, NTRUEncrypt, Kyber, Titanium);

2. Finding isogenies between Supersingular elliptic curves (e.g., Supersingular Isogeny Key Encapsulation); or

3. Decoding random codes (e.g., McEliece, Niederreiter).

Technical Note:

An algorithm described by Technical Note 2.c. may be referred to as being post-quantum, quantum-safe or quantum-resistant.

Note 1: When necessary as determined by the appropriate authority in the exporter’s country, details of items must be accessible and provided to the authority upon request, in order to establish any of the following:

a. Whether the item meets the criteria of 5A002.a.1. to 5A002.a.4.; or

b. Whether the cryptographic capability for data confidentiality specified in 5A002.a. is usable without "cryptographic activation".

Note 2: 5A002.a. does not control any of the following items, or specially designed "information security" components therefor:

a. Smart cards and smart card ‘readers/writers’ as follows:

1. A smart card or an electronically readable personal document (e.g., token coin, e-passport) that meets any of the following:

a. The cryptographic capability meets all of the following:

1. It is restricted for use in any of the following:

a. Equipment or systems not described by 5A002.a.1. to 5A002.a.4.;

b. Equipment or systems not using ‘cryptography for data confidentiality’ having a ‘described security algorithm’; or

c. Equipment or systems, excluded from 5A002.a., by paragraphs b. to f. of this Note; and

2. It cannot be reprogrammed for any other use; or:

b. Having all of the following:

1. It is specially designed and limited to allow protection of ‘personal data’ stored within;

2. Has been, or can only be, personalised for public or commercial transactions or individual identification; and

3. Where the cryptographic capability is not user-accessible;

Technical Note:

‘Personal data’ includes any data specific to a particular person or entity, such as the amount of money stored and data necessary for "authentication".

2. ‘Readers/writers’ specially designed or modified, and limited, for items specified in paragraph a.1. of this Note.

Technical Note:

‘Readers/writers’ include equipment that communicates with smart cards or electronically readable documents through a network.

b. Cryptographic equipment specially designed and limited for banking use or ‘money transactions’;

Technical Note:

‘Money transactions’ in 5A002.a. Note 2.b. includes the collection and settlement of fares or credit functions.

c. Portable or mobile radiotelephones for civil use (e.g., for use with commercial civil cellular radio communication systems) that are not capable of transmitting encrypted data directly to another radiotelephone or equipment (other than Radio Access Network (RAN) equipment), nor of passing encrypted data through RAN equipment (e.g., Radio Network Controller (RNC) or Base Station Controller (BSC));

d. Cordless telephone equipment not capable of end-to-end encryption where the maximum effective range of unboosted cordless operation (i.e. a single, unrelayed hop between terminal and home base station) is less than 400 metres according to the manufacturer’s specifications;

e. Portable or mobile radiotelephones and similar client wireless devices for civil use, that implement only published or commercial cryptographic standards (except for anti-piracy functions, which may be non-published) and also meet the provisions of paragraphs a.2. to a.4. of the Cryptography Note (Note 3 in Category 5, Part 2), that have been customised for a specific civil industry application with features that do not affect the cryptographic functionality of these original non-customised devices;

f. Items, where the "information security" functionality is limited to wireless "personal area network" functionality, implementing only published or commercial cryptographic standards;

g. Mobile telecommunications Radio Access Network (RAN) equipment designed for civil use, which also meet the provisions of paragraphs a.2. to a.4. of the Cryptography Note (Note 3 in Category 5, Part 2), having an RF output power limited to 0,1 W (20 dBm) or less, and supporting 16 or fewer concurrent users;

h. Routers, switches, gateways or relays, where the "information security" functionality is limited to the tasks of "Operations, Administration or Maintenance" ("OAM") implementing only published or commercial cryptographic standards; or

i. General purpose computing equipment or servers, where the "information security" functionality meets all of the following:

1. Uses only published or commercial cryptographic standards; and

2. Is any of the following:

a. Integral to a CPU that meets the provisions of Note 3 to Category 5, Part 2;

b. Integral to an operating system that is not specified in 5D002; or

c. Limited to "OAM" of the equipment.

j. Items specially designed for a ‘connected civil industry application’, meeting all of the following:

1. Being any of the following:

a. A network-capable endpoint device meeting any of the following:

1. The "information security" functionality is limited to securing ‘non-arbitrary data’ or the tasks of "Operations, Administration or Maintenance" ("OAM"); or

2. The device is limited to a specific ‘connected civil industry application’; or

b. Networking equipment meeting all of the following:

1. Being specially designed to communicate with the devices specified in paragraph j.1.a. above; and

2. The "information security" functionality is limited to supporting the ‘connected civil industry application’ of devices specified in paragraph j.1.a. above, or the tasks of "OAM" of this networking equipment or of other items specified in paragraph j. of this Note; and

2. Where the "information security" functionality implements only published or commercial cryptographic standards, and the cryptographic functionality cannot easily be changed by the user.

Technical Notes:

1. ‘Connected civil industry application’ means a network connected consumer or civil industry application other than "information security", digital communication, general purpose networking or computing.

2. ‘Non-arbitrary data’ means sensor or metering data directly related to the stability, performance or physical measurement of a system (e.g., temperature, pressure, flow rate, mass, volume, voltage, physical location etc.), that cannot be changed by the user of the device.

Being a ‘cryptographic activation token’;

Technical Note:

A ‘cryptographic activation token’ is an item designed or modified for any of the following:

1. Converting, by means of "cryptographic activation", an item not specified in Category 5, Part 2 into an item specified in 5A002.a. or 5D002.c.1., and not released by the Cryptography Note (Note 3 in Category 5, Part 2); or

2. Enabling, by means of "cryptographic activation", additional functionality specified in 5A002.a. of an item already specified in Category 5, Part 2.

Designed or modified to use or perform "quantum cryptography";

Technical Note:

"Quantum cryptography" is also known as Quantum Key Distribution (QKD).

Designed or modified to use cryptographic techniques to generate channelising codes, scrambling codes or network identification codes, for systems using ultra-wideband modulation techniques and having any of the following:

A bandwidth exceeding 500 MHz; or

A "fractional bandwidth" of 20 % or more;

Designed or modified to use cryptographic techniques to generate the spreading code for "spread spectrum" systems, other than those specified in 5A002.d., including the hopping code for "frequency hopping" systems.

5A003 Systems, equipment and components, for non-cryptographic "information security", as follows:

Communications cable systems designed or modified using mechanical, electrical or electronic means to detect surreptitious intrusion;

Note: 5A003.a. only controls physical layer security. For the purpose of 5A003.a., the physical layer includes Layer 1 of the Reference Model of Open Systems Interconnection (OSI) (ISO/IEC 7498-1).

Specially designed or modified to reduce the compromising emanations of information-bearing signals beyond what is necessary for health, safety or electromagnetic interference standards.

5A004 Systems, equipment and components for defeating, weakening or bypassing "information security", as follows:

Designed or modified to perform ‘cryptanalytic functions’.

Note: 5A004.a. includes systems or equipment, designed or modified to perform ‘cryptanalytic functions’ by means of reverse engineering.

Technical Note:

‘Cryptanalytic functions’ are functions designed to defeat cryptographic mechanisms in order to derive confidential variables or sensitive data, including clear text, passwords or cryptographic keys.

According to Article 11, listed in Annex IV part 1; this item requires an authorisation for intra-Union transfers.

Items, not specified in 4A005 or 5A004.a., designed to perform all of the following:

‘Extract raw data’ from a computing or communications device; and

Circumvent "authentication" or authorisation controls of the device, in order to perform the function described in 5A004.b.1.

Technical Note:

‘Extract raw data’ from a computing or communications device means to retrieve binary data from a storage medium (e.g., RAM, flash or hard disk) of the device without interpretation by the device’s operating system or filesystem.

Note 1: 5A004.b. does not control systems or equipment specially designed for the "development" or "production" of a computing or communications device.

Note 2: 5A004.b. does not include:

a. Debuggers, hypervisors;

b. Items limited to logical data extraction;

c. Data extraction items using chip-off or JTAG; or

d. Items specially designed and limited to jail-breaking or rooting.

5B1 Test, Inspection and Production Equipment

5B001 Telecommunications test, inspection and production equipment, components and accessories, as follows:

Equipment and specially designed components or accessories therefor, specially designed for the "development" or "production" of equipment, functions or features, specified in 5A001;

Note: 5B001.a. does not control optical fibre characterization equipment.

Equipment and specially designed components or accessories therefor, specially designed for the "development" of any of the following telecommunication transmission or switching equipment:

Not used;

Equipment employing a "laser" and having any of the following:

a. A transmission wavelength exceeding 1 750 nm; or

b. Not used;

c. Not used;

d. Employing analogue techniques and having a bandwidth exceeding 2,5 GHz; or

Note: 5B001.b.2.d. does not control equipment specially designed for the "development" of commercial TV systems.

Not used;

Radio equipment employing Quadrature-Amplitude-Modulation (QAM) techniques above level 1 024 ;

Not used.

5B2 Test, Inspection and Production Equipment

5B002 "Information security" test, inspection and "production" equipment, as follows:

Equipment specially designed for the "development" or "production" of equipment specified in 5A002, 5A003, 5A004 or 5B002.b.;

Measuring equipment specially designed to evaluate and validate the "information security" functions of the equipment specified in 5A002, 5A003 or 5A004, or of "software" specified in 5D002.a. or 5D002.c.

5C1 Materials

None

5C2 Materials

None.

5D1 Software

5D001 "Software" as follows:

"Software" specially designed or modified for the "development", "production" or "use" of equipment, functions or features, specified in 5A001;

Not used;

Specific "software" specially designed or modified to provide characteristics, functions or features of equipment, specified in 5A001 or 5B001;

"Software" specially designed or modified for the "development" of any of the following telecommunication transmission or switching equipment:

Not used;

Equipment employing a "laser" and having any of the following:

a. A transmission wavelength exceeding 1 750 nm; or

b. Employing analogue techniques and having a bandwidth exceeding 2,5 GHz; or

Note: 5D001.d.2.b. does not control "software" specially designed or modified for the "development" of commercial TV systems.

Not used;

Radio equipment employing Quadrature-Amplitude-Modulation (QAM) techniques above level 1 024 .

"Software", other than that specified in 5D001.a. or 5D001.c., specially designed or modified for monitoring or analysis by law enforcement, providing all of the following:

Execution of searches on the basis of "hard selectors" of either the content of communication or metadata acquired from a communications service provider using a ‘handover interface’; and

Mapping of the relational network or tracking the movement of targeted individuals based on the results of searches on content of communication or metadata or searches as described in 5D001.e.1.

Technical Notes:

1. For the purposes of 5D001.e., a ‘handover interface’ is a physical and logical interface, designed for use by an authorised law enforcement authority, across which targeted interception measures are requested from a communications service provider and the results of interception are delivered from a communications service provider to the requesting authority. The ‘handover interface’ is implemented within systems or equipment (e.g., mediation devices) that receive and validate the interception request, and deliver to the requesting authority only the results of interception that fulfil the validated request.

2. ‘Handover interfaces’ may be specified by international standards (including but not limited to ETSI TS 101 331 , ETSI TS 101 671 , 3GPP TS 33.108) or national equivalents.

Note: 5D001.e. does not control "software" specially designed or modified for any of the following:

a. Billing purposes;

b. Network Quality of Service (QoS);

c. Quality of Experience (QoE);

d. Mediation devices; or

e. Mobile payment or banking use.

5D101 "Software" specially designed or modified for the "use" of equipment specified in 5A101.

5D2 Software

5D002 "Software" as follows:

"Software" specially designed or modified for the "development", "production" or "use" of any of the following:

Equipment specified in 5A002 or "software" specified in 5D002.c.1.;

Equipment specified in 5A003 or "software" specified in 5D002.c.2.; or

Equipment or "software", as follows:

a. Equipment specified in 5A004.a. or "software" specified in 5D002.c.3.a.;

b. Equipment specified in 5A004.b. or "software" specified in 5D002.c.3.b.

According to Article 11, listed in Annex IV part 1; this item requires an authorisation for intra-Union transfers.

"Software" having the characteristics of a ‘cryptographic activation token’ specified in 5A002.b.;

"Software" having the characteristics of, or performing or simulating the functions of, any of the following:

Equipment specified in 5A002.a., 5A002.c., 5A002.d. or 5A002.e.;

Note: 5D002.c.1. does not control "software" limited to the tasks of "OAM" implementing only published or commercial cryptographic standards.

Equipment specified in 5A003; or

Equipment, as follows:

a. Equipment specified in 5A004.a.;

b. Equipment specified in 5A004.b.

Note: 5D002.c.3.b. does not control "intrusion software".

According to Article 11, listed in Annex IV part 1; this item requires an authorisation for intra-Union transfers.

Not used.

5E1 Technology

5E001 "Technology" as follows:

"Technology" according to the General Technology Note for the "development", "production" or "use" (excluding operation) of equipment, functions or features specified in 5A001 or "software" specified in 5D001.a. or 5D001.e.;

Specific "technology" as follows:

"Technology" "required" for the "development" or "production" of telecommunications equipment specially designed to be used on board satellites;

"Technology" for the "development" or "use" of "laser" communication techniques with the capability of automatically acquiring and tracking signals and maintaining communications through exoatmosphere or sub-surface (water) media;

"Technology" for the "development" of digital cellular radio base station receiving equipment whose reception capabilities that allow multi-band, multi-channel, multi-mode, multi-coding algorithm or multi-protocol operation can be modified by changes in "software";

"Technology" for the "development" of "spread spectrum" techniques, including "frequency hopping" techniques;

Note: 5E001.b.4. does not control "technology" for the "development" of any of the following:

a. Civil cellular radio-communications systems; or

b. Fixed or mobile satellite earth stations for commercial civil telecommunications.

"Technology" according to the General Technology Note for the "development" or "production" of any of the following:

Not used;

Equipment employing a "laser" and having any of the following:

a. A transmission wavelength exceeding 1 750 nm; or

b. Not used;

c. Not used;

d. Employing wavelength division multiplexing techniques of optical carriers at less than 100 GHz spacing; or

e. Employing analogue techniques and having a bandwidth exceeding 2,5 GHz;

Note: 5E001.c.2.e. does not control "technology" for commercial TV systems.

N.B. For "technology" for the "development" or "production" of non-telecommunications equipment employing a laser, see 6E.

Equipment employing "optical switching" and having a switching time less than 1 ms;

Radio equipment having any of the following:

a. Quadrature-Amplitude-Modulation (QAM) techniques above level 1 024 ;

b. Operating at input or output frequencies exceeding 31,8 GHz; or

Note: 5E001.c.4.b. does not control "technology" for equipment designed or modified for operation in any frequency band which is "allocated by the ITU" for radio-communications services, but not for radio-determination.

c. Operating in the 1,5 MHz to 87,5 MHz band and incorporating adaptive techniques providing more than 15 dB suppression of an interfering signal; or

Not used;

Mobile equipment having all of the following:

a. Operating at an optical wavelength greater than or equal to 200 nm and less than or equal to 400 nm; and

b. Operating as a "local area network";

"Technology" according to the General Technology Note for the "development" or "production" of "Monolithic Microwave Integrated Circuit" ("MMIC") amplifiers specially designed for telecommunications and that are any of the following:

Technical Note:

For purposes of 5E001.d., the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output.

Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15 %, and having any of the following:

a. A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

b. A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

c. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

d. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a "fractional bandwidth" greater than 10 %, and having any of the following:

a. A peak saturated power output greater than 10W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or

b. A peak saturated power output greater than 5W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz;

Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a "fractional bandwidth" of greater than 10 %;

Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %;

Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %;

Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or

Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 90 GHz;

"Technology" according to the General Technology Note for the "development" or "production" of electronic devices and circuits, specially designed for telecommunications and containing components manufactured from "superconductive" materials, specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following:

Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10⁻¹⁴ J; or

Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10 000 .

5E101 "Technology" according to the General Technology Note for the "development", "production" or "use" of equipment specified in 5A101.

5E2 Technology

5E002 "Technology" as follows:

"Technology" according to the General Technology Note for the "development", "production" or "use" of equipment specified in 5A002, 5A003, 5A004 or 5B002, or of "software" specified in 5D002.a. or 5D002.c.

Note: 5E002.a. does not control "technology" for items specified in 5A004.b., 5D002.a.3.b. or 5D002.c.3.b.

"Technology" having the characteristics of a ‘cryptographic activation token’ specified in 5A002.b.

Note: 5E002 includes "information security" technical data resulting from procedures carried out to evaluate or determine the implementation of functions, features or techniques specified in Category 5, Part 2.

According to Article 11, listed in Annex IV part 1; this item requires an authorisation for intra-Union transfers.

Category 6 - SENSORS AND LASERS

6A Systems, Equipment and Components

6A001 Acoustic systems, equipment and components, as follows:

Marine acoustic systems, equipment and specially designed components therefor, as follows:

Active (transmitting or transmitting-and-receiving) systems, equipment and specially designed components therefor, as follows:

Note: 6A001.a.1. does not control equipment as follows:

a. Depth sounders operating vertically below the apparatus, not including a scanning function exceeding ± 20o, and limited to measuring the depth of water, the distance of submerged or buried objects or fish finding;

b. Acoustic beacons, as follows:

1. Acoustic emergency beacons;

2. Pingers specially designed for relocating or returning to an underwater position.

a. Acoustic seabed survey equipment as follows:

1. Surface vessel survey equipment designed for seabed topographic mapping and having all of the following:

a. Designed to take measurements at an angle exceeding 20o from the vertical;

b. Designed to measure seabed topography at seabed depths exceeding 600 m;

c. ‘Sounding resolution’ less than 2; and

d. ‘Enhancement’ of the depth "accuracy" through compensation for all the following:

1. Motion of the acoustic sensor;

2. In-water propagation from sensor to the seabed and back; and

3. Sound speed at the sensor;

Technical Notes:

1. ‘Sounding resolution’ is the swath width (degrees) divided by the maximum number of soundings per swath.

2. ‘Enhancement’ includes the ability to compensate by external means.

2. Underwater survey equipment designed for seabed topographic mapping and having any of the following:

Technical Note:

The acoustic sensor pressure rating determines the depth rating of the equipment specified in 6A001.a.1.a.2.

a. Having all of the following:

1. Designed or modified to operate at depths exceeding 300 m; and

2. ‘Sounding rate’ greater than 3 800 m/s; or

Technical Note:

‘Sounding rate’ is the product of the maximum speed (m/s) at which the sensor can operate and the maximum number of soundings per swath assuming 100 % coverage. For systems that produce soundings in two directions (3D sonars), the maximum of the ‘sounding rate’ in either direction should be used.

b. Survey equipment, not specified in 6A001.a.1.a.2.a., having all of the following:

1. Designed or modified to operate at depths exceeding 100 m;

2. Designed to take measurements at an angle exceeding 20o from the vertical;

3. Having any of the following:

a. Operating frequency below 350 kHz; or

b. Designed to measure seabed topography at a range exceeding 200 m from the acoustic sensor; and

4. ‘Enhancement’ of the depth "accuracy" through compensation of all of the following:

a. Motion of the acoustic sensor;

b. In-water propagation from sensor to the seabed and back; and

c. Sound speed at the sensor;

3. Side Scan Sonar (SSS) or Synthetic Aperture Sonar (SAS), designed for seabed imaging and having all of the following, and specially designed transmitting and receiving acoustic arrays therefor:

a. Designed or modified to operate at depths exceeding 500 m;

b. An ‘area coverage rate’ of greater than 570 m²/s while operating at the maximum range that it can operate with an ‘along track resolution’ of less than 15 cm; and

c. An ‘across track resolution’ of less than 15 cm;

Technical Notes:

1. ‘Area coverage rate’ (m²/s) is twice the product of the sonar range (m) and the maximum speed (m/s) at which the sensor can operate at that range.

2. ‘Along track resolution’ (cm), for SSS only, is the product of azimuth (horizontal) beamwidth (degrees) and sonar range (m) and 0,873.

3. ‘Across track resolution’ (cm) is 75 divided by the signal bandwidth (kHz).

b. Systems or transmitting and receiving arrays, designed for object detection or location, having any of the following:

1. A transmitting frequency below 10 kHz;

2. Sound pressure level exceeding 224 dB (reference 1 μPa at 1 m) for equipment with an operating frequency in the band from 10 kHz to 24 kHz inclusive;

3. Sound pressure level exceeding 235 dB (reference 1 μPa at 1 m) for equipment with an operating frequency in the band between 24 kHz and 30 kHz;

4. Forming beams of less than 1o on any axis and having an operating frequency of less than 100 kHz;

5. Designed to operate with an unambiguous display range exceeding 5 120 m; or

6. Designed to withstand pressure during normal operation at depths exceeding 1 000 m and having transducers with any of the following:

a. Dynamic compensation for pressure; or

b. Incorporating other than lead zirconate titanate as the transduction element;

c. Acoustic projectors (including transducers), incorporating piezoelectric, magnetostrictive, electrostrictive, electrodynamic or hydraulic elements operating individually or in a designed combination and having any of the following:

Note 1: The control status of acoustic projectors, including transducers, specially designed for other equipment not specified in 6A001 is determined by the control status of the other equipment.

Note 2: 6A001.a.1.c. does not control electronic sources which direct the sound vertically only, or mechanical (e.g., air gun or vapour-shock gun) or chemical (e.g., explosive) sources.

Note 3: Piezoelectric elements specified in 6A001.a.1.c. include those made from lead-magnesium-niobate/lead-titanate (Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃, or PMN-PT) single crystals grown from solid solution or lead-indium-niobate/lead-magnesium niobate/lead-titanate (Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃, or PIN-PMN-PT) single crystals grown from solid solution.

1. Operating at frequencies below 10 kHz and having any of the following:

a. Not designed for continuous operation at 100 % duty cycle and having a radiated ‘free-field Source Level (SL_RMS)’ exceeding (10log(f) + 169,77) dB (reference 1 μPa at 1 m) where f is the frequency in Hertz of maximum Transmitting Voltage Response (TVR) below 10kHz; or

b. Designed for continuous operation at 100 % duty cycle and having a continuously radiated ‘free-field Source Level (SL_RMS)’ at 100 % duty cycle exceeding (10log(f) + 159,77) dB (reference 1 μPa at 1 m) where f is the frequency in Hertz of maximum Transmitting Voltage Response (TVR) below 10kHz; or

Technical Note:

The ‘free-field Source Level (SL_RMS)’ is defined along the maximum response axis and in the far field of the acoustic projector. It can be obtained from the Transmitting Voltage Response using the following equation: SL_RMS = (TVR + 20log V_RMS) dB (ref 1μPa at 1 m), where SL_RMS is the source level, TVR is the Transmitting Voltage Response and V_RMS is the Driving Voltage of the Projector.

2. Not used;

3. Side-lobe suppression exceeding 22 dB;

d. Acoustic systems and equipment, designed to determine the position of surface vessels or underwater vehicles and having all the following, and specially designed components therefor:

1. Detection range exceeding 1 000 m; and

2. Determined position error of less than 10 m rms (root mean square) when measured at a range of 1 000 m;

Note: 6A001.a.1.d. includes:

a. Equipment using coherent "signal processing" between two or more beacons and the hydrophone unit carried by the surface vessel or underwater vehicle;

b. Equipment capable of automatically correcting speed-of-sound propagation errors for calculation of a point.

e. Active individual sonars, specially designed or modified to detect, locate and automatically classify swimmers or divers, having all of the following, and specially designed transmitting and receiving acoustic arrays therefor:

1. Detection range exceeding 530 m;

2. Determined position error of less than 15 m rms (root mean square) when measured at a range of 530 m; and

3. Transmitted pulse signal bandwidth exceeding 3 kHz;

N.B. For diver detection systems specially designed or modified for military use, see the Military Goods Controls.

Note: For 6A001.a.1.e., where multiple detection ranges are specified for various environments, the greatest detection range is used.

Passive systems, equipment and specially designed components therefor, as follows:

Note: 6A001.a.2. also controls receiving equipment, whether or not related in normal application to separate active equipment, and specially designed components therefor.

a. Hydrophones having any of the following:

Note: The control status of hydrophones specially designed for other equipment is determined by the control status of the other equipment.

Technical Notes:

1. Hydrophones consist of one or more sensing elements producing a single acoustic output channel. Those that contain multiple elements can be referred to as a hydrophone group.

2. For the purposes of 6A001.a.2.a., underwater acoustic transducers designed to operate as passive receivers are hydrophones.

1. Incorporating continuous flexible sensing elements;

2. Incorporating flexible assemblies of discrete sensing elements with either a diameter or length less than 20 mm and with a separation between elements of less than 20 mm;

3. Having any of the following sensing elements:

a. Optical fibres;

b. ‘Piezoelectric polymer films’ other than polyvinylidene-fluoride (PVDF) and its co-polymers {P(VDF-TrFE) and P(VDF-TFE)};

c. ‘Flexible piezoelectric composites’;

d. Lead-magnesium-niobate/lead-titanate (i.e., Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃, or PMN-PT) piezoelectric single crystals grown from solid solution; or

e. Lead-indium-niobate/lead-magnesium niobate/lead-titanate (i.e., Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃, or PIN-PMN-PT) piezoelectric single crystals grown from solid solution;

4. A ‘hydrophone sensitivity’ better than -180 dB at any depth with no acceleration compensation;

5. Designed to operate at depths exceeding 35 m with acceleration compensation; or

6. Designed for operation at depths exceeding 1 000 m and having a ‘hydrophone sensitivity’ better than -230 dB below 4 kHz;

Technical Notes:

1. ‘Piezoelectric polymer film’ sensing elements consist of polarised polymer film that is stretched over and attached to a supporting frame or spool (mandrel).

2. ‘Flexible piezoelectric composite’ sensing elements consist of piezoelectric ceramic particles or fibres combined with an electrically insulating, acoustically transparent rubber, polymer or epoxy compound, where the compound is an integral part of the sensing elements.

3. ‘Hydrophone sensitivity’ is defined as twenty times the logarithm to the base 10 of the ratio of rms output voltage to a 1 V rms reference, when the hydrophone sensor, without a pre-amplifier, is placed in a plane wave acoustic field with an rms pressure of 1 μPa. For example, a hydrophone of -160 dB (reference 1 V per μPa) would yield an output voltage of 10^–8 V in such a field, while one of -180 dB sensitivity would yield only 10^–9 V output. Thus, -160 dB is better than -180 dB.

b. Towed acoustic hydrophone arrays having any of the following:

Technical Note:

Hydrophone arrays consist of a number of hydrophones providing multiple acoustic output channels.

1. Hydrophone group spacing of less than 12,5 m or ‘able to be modified’ to have hydrophone group spacing of less than 12,5 m;

2. Designed or ‘able to be modified’ to operate at depths exceeding 35 m;

Technical note:

‘Able to be modified’ in 6A001.a.2.b.1. and 2. means having provisions to allow a change of the wiring or interconnections to alter hydrophone group spacing or operating depth limits. These provisions are: spare wiring exceeding 10 % of the number of wires, hydrophone group spacing adjustment blocks or internal depth limiting devices that are adjustable or that control more than one hydrophone group.

3. Heading sensors specified in 6A001.a.2.d.;

4. Longitudinally reinforced array hoses;

5. An assembled array of less than 40 mm in diameter;

6. Not used;

7. Hydrophone characteristics specified in 6A001.a.2.a.; or

8. Accelerometer-based hydro-acoustic sensors specified in 6A001.a.2.g.;

c. Processing equipment, specially designed for towed acoustic hydrophone arrays, having "user-accessible programmability" and time or frequency domain processing and correlation, including spectral analysis, digital filtering and beamforming using Fast Fourier or other transforms or processes;

d. Heading sensors having all of the following:

1. An "accuracy" of better than 0,5^o; and

2. Designed to operate at depths exceeding 35 m or having an adjustable or removable depth sensing device in order to operate at depths exceeding 35 m;

N.B. For inertial heading systems, see 7A003.c.

e. Bottom or bay-cable hydrophone arrays, having any of the following:

1. Incorporating hydrophones specified in 6A001.a.2.a.;

2. Incorporating multiplexed hydrophone group signal modules having all of the following characteristics:

a. Designed to operate at depths exceeding 35 m or having an adjustable or removable depth sensing device in order to operate at depths exceeding 35 m; and

b. Capable of being operationally interchanged with towed acoustic hydrophone array modules; or

3. Incorporating accelerometer-based hydro-acoustic sensors specified in 6A001.a.2.g.;

f. Processing equipment, specially designed for bottom or bay cable systems, having "user-accessible programmability" and time or frequency domain processing and correlation, including spectral analysis, digital filtering and beamforming using Fast Fourier or other transforms or processes;

g. Accelerometer-based hydro-acoustic sensors having all of the following:

1. Composed of three accelerometers arranged along three distinct axes;

2. Having an overall ‘acceleration sensitivity’ better than 48 dB (reference 1 000 mV rms per 1g);

3. Designed to operate at depths greater than 35 meters; and

4. Operating frequency below 20 kHz.

Note: 6A001.a.2.g. does not control particle velocity sensors or geophones.

Technical Notes:

1. Accelerometer-based hydro-acoustic sensors are also known as vector sensors.

2. ‘Acceleration sensitivity’ is defined as twenty times the logarithm to the base 10 of the ratio of rms output voltage to a 1 V rms reference, when the hydro-acoustic sensor, without a preamplifier, is placed in a plane wave acoustic field with an rms acceleration of 1 g (i.e., 9,81 m/s²).

Correlation-velocity and Doppler-velocity sonar log equipment, designed to measure the horizontal speed of the equipment carrier relative to the sea bed, as follows:

Correlation-velocity sonar log equipment having any of the following characteristics:

a. Designed to operate at distances between the carrier and the sea bed exceeding 500 m; or

b. Having speed "accuracy" better than 1 % of speed;

Doppler-velocity sonar log equipment having speed "accuracy" better than 1 % of speed.

Note 1: 6A001.b. does not control depth sounders limited to any of the following:

a. Measuring the depth of water;

b. Measuring the distance of submerged or buried objects; or

c. Fish finding.

Note 2: 6A001.b. does not control equipment specially designed for installation on surface vessels.

Not used.

According to Article 11, listed in Annex IV part 1: this item requires an authorisation for intra-Union transfers.

6A002 Optical sensors or equipment and components therefor, as follows:

N.B. SEE ALSO 6A102.

Optical detectors as follows:

"Space-qualified" solid-state detectors as follows:

Note: For the purpose of 6A002.a.1., solid-state detectors include "focal plane arrays".

a. "Space-qualified" solid-state detectors having all of the following:

1. A peak response in the wavelength range exceeding 10 nm but not exceeding 300 nm; and

2. A response of less than 0,1 % relative to the peak response at a wavelength exceeding 400 nm;

b. "Space-qualified" solid-state detectors having all of the following:

1. A peak response in the wavelength range exceeding 900 nm but not exceeding 1 200 nm; and

2. A response "time constant" of 95 ns or less;

c. "Space-qualified" solid-state detectors having a peak response in the wavelength range exceeding 1 200 nm but not exceeding 30 000 nm;

d. "Space-qualified" "focal plane arrays" having more than 2 048 elements per array and having a peak response in the wavelength range exceeding 300 nm but not exceeding 900 nm;

Image intensifier tubes and specially designed components therefor, as follows:

Note: 6A002.a.2. does not control non-imaging photomultiplier tubes having an electron sensing device in the vacuum space limited solely to any of the following:

a. A single metal anode; or

b. Metal anodes with a centre to centre spacing greater than 500 μm.

Technical Note:

‘Charge multiplication’ is a form of electronic image amplification and is defined as the generation of charge carriers as a result of an impact ionisation gain process. ‘Charge multiplication’ sensors may take the form of an image intensifier tube, solid state detector or "focal plane array".

a. Image intensifier tubes having all of the following:

1. A peak response in the wavelength range exceeding 400 nm but not exceeding 1 050 nm;

2. Electron image amplification using any of the following:

a. A microchannel plate with a hole pitch (centre-to-centre spacing) of 12 μm or less; or

b. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve ‘charge multiplication’ other than by a microchannel plate; and

3. Any of the following photocathodes:

a. Multialkali photocathodes (e.g., S-20 and S-25) having a luminous sensitivity exceeding 350 μA/lm;

b. GaAs or GaInAs photocathodes; or

c. Other "III/V compound" semiconductor photocathodes having a maximum "radiant sensitivity" exceeding 10 mA/W;

b. Image intensifier tubes having all of the following:

1. A peak response in the wavelength range exceeding 1 050 nm but not exceeding 1 800 nm;

2. Electron image amplification using any of the following:

a. A microchannel plate with a hole pitch (centre-to-centre spacing) of 12 μm or less; or

b. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve ‘charge multiplication’ other than by a microchannel plate; and

3. "III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum "radiant sensitivity" exceeding 15 mA/W;

c. Specially designed components as follows:

1. Microchannel plates having a hole pitch (centre-to-centre spacing) of 12 μm or less;

2. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve ‘charge multiplication’ other than by a microchannel plate;

3. "III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes;

Note: 6A002.a.2.c.3. does not control compound semiconductor photocathodes designed to achieve a maximum "radiant sensitivity" of any of the following:

a. 10 mA/W or less at the peak response in the wavelength range exceeding 400 nm but not exceeding 1 050 nm; or

b. 15 mA/W or less at the peak response in the wavelength range exceeding 1 050 nm but not exceeding 1 800 nm.

Non-"space-qualified" "focal plane arrays" as follows:

N.B. ‘Microbolometer’ non-"space-qualified" "focal plane arrays" are only specified in 6A002.a.3.f.

Technical Note:

Linear or two-dimensional multi-element detector arrays are referred to as "focal plane arrays";

Note 1: 6A002.a.3. includes photoconductive arrays and photovoltaic arrays.

Note 2: 6A002.a.3. does not control:

a. Multi-element (not to exceed 16 elements) encapsulated photoconductive cells using either lead sulphide or lead selenide;

b. Pyroelectric detectors using any of the following:

1. Triglycine sulphate and variants;

2. Lead-lanthanum-zirconium titanate and variants;

3. Lithium tantalate;

4. Polyvinylidene fluoride and variants; or

5. Strontium barium niobate and variants;

c. "Focal plane arrays" specially designed or modified to achieve ‘charge multiplication’ and limited by design to have a maximum "radiant sensitivity" of 10 mA/W or less for wavelengths exceeding 760 nm, having all of the following:

1. Incorporating a response limiting mechanism designed not to be removed or modified; and

2. Any of the following:

a. The response limiting mechanism is integral to or combined with the detector element; or

b. The "focal plane array" is only operable with the response limiting mechanism in place.

Technical Note:

A response limiting mechanism integral to the detector element is designed not to be removed or modified without rendering the detector inoperable.

d. Thermopile arrays having less than 5 130 elements.

Technical Note:

a. Non-"space-qualified" "focal plane arrays" having all of the following:

1. Individual elements with a peak response within the wavelength range exceeding 900 nm but not exceeding 1 050 nm; and

2. Any of the following:

a. A response "time constant" of less than 0,5 ns; or

b. Specially designed or modified to achieve ‘charge multiplication’ and having a maximum "radiant sensitivity" exceeding 10 mA/W;

b. Non-"space-qualified" "focal plane arrays" having all of the following:

1. Individual elements with a peak response in the wavelength range exceeding 1 050 nm but not exceeding 1 200 nm; and

2. Any of the following:

a. A response "time constant" of 95 ns or less; or

b. Specially designed or modified to achieve ‘charge multiplication’ and having a maximum "radiant sensitivity" exceeding 10 mA/W;

c. Non-"space-qualified" non-linear (2-dimensional) "focal plane arrays" having individual elements with a peak response in the wavelength range exceeding 1 200 nm but not exceeding 30 000 nm;

N.B. Silicon and other material based ‘microbolometer’ non-"space-qualified" "focal plane arrays" are only specified in 6A002.a.3.f.

d. Non-"space-qualified" linear (1-dimensional) "focal plane arrays" having all of the following:

1. Individual elements with a peak response in the wavelength range exceeding 1 200 nm but not exceeding 3 000 nm; and

2. Any of the following:

a. A ratio of ‘scan direction’ dimension of the detector element to the ‘cross-scan direction’ dimension of the detector element of less than 3,8; or

b. Signal processing in the detector elements;

Note: 6A002.a.3.d. does not control "focal plane arrays" (not to exceed 32 elements) having detector elements limited solely to germanium material.

Technical Note:

For the purposes of 6A002.a.3.d., ‘cross-scan direction’ is defined as the axis parallel to the linear array of detector elements and the ‘scan direction’ is defined as the axis perpendicular to the linear array of detector elements.

e. Non-"space-qualified" linear (1-dimensional) "focal plane arrays" having individual elements with a peak response in the wavelength range exceeding 3 000 nm but not exceeding 30 000 nm;

f. Non-"space-qualified" non-linear (2-dimensional) infrared "focal plane arrays" based on ‘microbolometer’ material having individual elements with an unfiltered response in the wavelength range equal to or exceeding 8 000 nm but not exceeding 14 000 nm;

Technical Note:

For the purposes of 6A002.a.3.f., ‘microbolometer’ is defined as a thermal imaging detector that, as a result of a temperature change in the detector caused by the absorption of infrared radiation, is used to generate any usable signal.

g. Non-"space-qualified" "focal plane arrays" having all of the following:

1. Individual detector elements with a peak response in the wavelength range exceeding 400 nm but not exceeding 900 nm;

2. Specially designed or modified to achieve ‘charge multiplication’ and having a maximum "radiant sensitivity" exceeding 10 mA/W for wavelengths exceeding 760 nm; and

3. Greater than 32 elements;

"Monospectral imaging sensors" and "multispectral imaging sensors", designed for remote sensing applications and having any of the following:

An Instantaneous-Field-Of-View (IFOV) of less than 200 μrad (microradians); or

Specified for operation in the wavelength range exceeding 400 nm but not exceeding 30 000 nm and having all the following;

a. Providing output imaging data in digital format; and

b. Having any of the following characteristics:

1. "Space-qualified"; or

2. Designed for airborne operation, using other than silicon detectors, and having an IFOV of less than 2,5 mrad (milliradians);

Note: 6A002.b.1. does not control "monospectral imaging sensors" with a peak response in the wavelength range exceeding 300 nm but not exceeding 900 nm and only incorporating any of the following non–"space-qualified" detectors or non–"space-qualified" "focal plane arrays":

1. Charge Coupled Devices (CCD) not designed or modified to achieve ‘charge multiplication’; or

2. Complementary Metal Oxide Semiconductor (CMOS) devices not designed or modified to achieve ‘charge multiplication’.

‘Direct view’ imaging equipment incorporating any of the following:

Image intensifier tubes specified in 6A002.a.2.a. or 6A002.a.2.b.;

"Focal plane arrays" specified in 6A002.a.3.; or

Solid state detectors specified in 6A002.a.1.;

Technical Note:

‘Direct view’ refers to imaging equipment that presents a visual image to a human observer without converting the image into an electronic signal for television display, and that cannot record or store the image photographically, electronically or by any other means.

Note: 6A002.c. does not control equipment as follows, when incorporating other than GaAs or GaInAs photocathodes:

a. Industrial or civilian intrusion alarm, traffic or industrial movement control or counting systems;

b. Medical equipment;

c. Industrial equipment used for inspection, sorting or analysis of the properties of materials;

d. Flame detectors for industrial furnaces;

e. Equipment specially designed for laboratory use.

Special support components for optical sensors, as follows:

"Space-qualified" cryocoolers;

Non-"space-qualified" cryocoolers having a cooling source temperature below 218 K (–55 °C), as follows:

a. Closed cycle type with a specified Mean-Time-To-Failure (MTTF) or Mean-Time-Between-Failures (MTBF), exceeding 2 500 hours;

b. Joule-Thomson (JT) self-regulating minicoolers having bore (outside) diameters of less than 8 mm;

Optical sensing fibres specially fabricated either compositionally or structurally, or modified by coating, to be acoustically, thermally, inertially, electromagnetically or nuclear radiation sensitive;

Note: 6A002.d.3. does not control encapsulated optical sensing fibres specially designed for bore hole sensing applications.

Not used.

‘Read-out integrated circuits’ (‘ROIC’) specially designed for "focal plane arrays" specified in 6A002.a.3.

Note: 6A002.f. does not control ‘read-out integrated circuits’ specially designed for civil automotive applications.

Technical Note:

A ‘Read-Out Integrated Circuit’ (‘ROIC’) is an integrated circuit designed to underlie or be bonded to a "focal plane array" ("FPA") and used to read-out (i.e., extract and register) signals produced by the detector elements. At a minimum the ‘ROIC’ reads the charge from the detector elements by extracting the charge and applying a multiplexing function in a manner that retains the relative spatial position and orientation information of the detector elements for processing inside or outside the ‘ROIC’.

6A003 Cameras, systems or equipment, and components therefor, as follows:

N.B. SEE ALSO 6A203.

Instrumentation cameras and specially designed components therefor, as follows:

Note: Instrumentation cameras, specified in 6A003.a.3. to 6A003.a.5., with modular structures should be evaluated by their maximum capability, using plug-ins available according to the camera manufacturer's specifications.

Not used;

Electronic streak cameras having temporal resolution better than 50 ns;

Electronic framing cameras having a speed exceeding 1 000 000 frames/s;

Electronic cameras having all of the following:

a. An electronic shutter speed (gating capability) of less than 1 μs per full frame; and

b. A read out time allowing a framing rate of more than 125 full frames per second;

Plug-ins having all of the following characteristics:

a. Specially designed for instrumentation cameras which have modular structures and which are specified in 6A003.a.; and

b. Enabling these cameras to meet the characteristics specified in 6A003.a.3., 6A003.a.4., or 6A003.a.5., according to the manufacturer's specifications;

Imaging cameras as follows:

Note: 6A003.b. does not control television or video cameras, specially designed for television broadcasting.

Video cameras incorporating solid state sensors, having a peak response in the wavelength range exceeding 10 nm, but not exceeding 30 000 nm and having all of the following:

a. Having any of the following:

1. More than 4 × 10⁶ "active pixels" per solid state array for monochrome (black and white) cameras;

2. More than 4 × 10⁶ "active pixels" per solid state array for colour cameras incorporating three solid state arrays; or

3. More than 12 × 10⁶ "active pixels" for solid state array colour cameras incorporating one solid state array; and

b. Having any of the following:

1. Optical mirrors specified in 6A004.a.;

2. Optical control equipment specified in 6A004.d.; or

3. The capability for annotating internally generated ‘camera tracking data’;

Technical Notes:

1. For the purpose of this entry, digital video cameras should be evaluated by the maximum number of "active pixels" used for capturing moving images.

2. For the purpose of this entry, ‘camera tracking data’ is the information necessary to define camera line of sight orientation with respect to the earth. This includes: 1) the horizontal angle the camera line of sight makes with respect to the earth's magnetic field direction and; 2) the vertical angle between the camera line of sight and the earth's horizon.

Scanning cameras and scanning camera systems, having all of the following:

a. A peak response in the wavelength range exceeding 10 nm, but not exceeding 30 000 nm;

b. Linear detector arrays with more than 8 192 elements per array; and

c. Mechanical scanning in one direction;

Note: 6A003.b.2. does not control scanning cameras and scanning camera systems, specially designed for any of the following:

a. Industrial or civilian photocopiers;

b. Image scanners specially designed for civil, stationary, close proximity scanning applications (e.g., reproduction of images or print contained in documents, artwork or photographs); or

c. Medical equipment.

Imaging cameras incorporating image intensifier tubes specified in 6A002.a.2.a. or 6A002.a.2.b.;

Imaging cameras incorporating "focal plane arrays" having any of the following:

a. Incorporating "focal plane arrays" specified in 6A002.a.3.a. to 6A002.a.3.e.;

b. Incorporating "focal plane arrays" specified in 6A002.a.3.f.; or

c. Incorporating "focal plane arrays" specified in 6A002.a.3.g.;

Note 1: Imaging cameras specified in 6A003.b.4. include "focal plane arrays" combined with sufficient "signal processing" electronics, beyond the read out integrated circuit, to enable as a minimum the output of an analogue or digital signal once power is supplied.

Note 2: 6A003.b.4.a. does not control imaging cameras incorporating linear "focal plane arrays" with 12 elements or fewer, not employing time-delay-and-integration within the element and designed for any of the following:

a. Industrial or civilian intrusion alarm, traffic or industrial movement control or counting systems;

b. Industrial equipment used for inspection or monitoring of heat flows in buildings, equipment or industrial processes;

c. Industrial equipment used for inspection, sorting or analysis of the properties of materials;

d. Equipment specially designed for laboratory use; or

e. Medical equipment.

Note 3: 6A003.b.4.b. does not control imaging cameras having any of the following:

a. A maximum frame rate equal to or less than 9 Hz;

b. Having all of the following:

1. Having a minimum horizontal or vertical ‘Instantaneous-Field-of-View (IFOV)’ of at least 2 mrad (milliradians);

2. Incorporating a fixed focal-length lens that is not designed to be removed;

3. Not incorporating a ‘direct view’ display, and

4. Having any of the following:

a. No facility to obtain a viewable image of the detected field-of-view, or

b. The camera is designed for a single kind of application and designed not to be user modified; or

c. The camera is specially designed for installation into a civilian passenger land vehicle and having all of the following:

1. The placement and configuration of the camera within the vehicle are solely to assist the driver in the safe operation of the vehicle;

2. Is only operable when installed in any of the following:

a. The civilian passenger land vehicle for which it was intended and the vehicle weighs less than 4 500 kg (gross vehicle weight); or

b. A specially designed, authorised maintenance test facility; and

3. Incorporates an active mechanism that forces the camera not to function when it is removed from the vehicle for which it was intended.

Technical Notes:

1. ‘Instantaneous Field of View (IFOV)’ specified in 6A003.b.4. Note 3.b. is the lesser figure of the ‘Horizontal IFOV’ or the ‘Vertical IFOV’.

‘Horizontal IFOV’ = horizontal Field of View (FOV)/number of horizontal detector elements

‘Vertical IFOV’ = vertical Field of View (FOV)/number of vertical detector elements.

2. ‘Direct view’ in 6A003.b.4. Note 3.b. refers to an imaging camera operating in the infrared spectrum that presents a visual image to a human observer using a near-to-eye micro display incorporating any light-security mechanism.

Note 4: 6A003.b.4.c. does not control imaging cameras having any of the following:

a. Having all of the following:

1. Where the camera is specially designed for installation as an integrated component into indoor and wall-plug-operated systems or equipment, limited by design for a single kind of application, as follows;

a. Industrial process monitoring, quality control, or analysis of the properties of materials;

b. Laboratory equipment specially designed for scientific research;

c. Medical equipment;

d. Financial fraud detection equipment; and

2. Is only operable when installed in any of the following:

a. The system(s) or equipment for which it was intended; or

b. A specially designed, authorised maintenance facility; and

3. Incorporates an active mechanism that forces the camera not to function when it is removed from the system(s) or equipment for which it was intended;

b. Where the camera is specially designed for installation into a civilian passenger land vehicle or passenger and vehicle ferries, and having all of the following:

1. The placement and configuration of the camera within the vehicle or ferry is solely to assist the driver or operator in the safe operation of the vehicle or ferry;

2. Is only operable when installed in any of the following:

a. The civilian passenger land vehicle for which it was intended and the vehicle weighs less than 4 500 kg (gross vehicle weight);

b. The passenger and vehicle ferry for which it was intended and having a length overall (LOA) 65 m or greater; or

c. A specially designed, authorised maintenance test facility; and

3. Incorporates an active mechanism that forces the camera not to function when it is removed from the vehicle for which it was intended;

c. Limited by design to have a maximum "radiant sensitivity" of 10 mA/W or less for wavelengths exceeding 760 nm, having all of the following:

1. Incorporating a response limiting mechanism designed not to be removed or modified;

2. Incorporates an active mechanism that forces the camera not to function when the response limiting mechanism is removed; and

3. Not specially designed or modified for underwater use: or

d. Having all of the following:

1. Not incorporating a ‘direct view’ or electronic image display;

2. Has no facility to output a viewable image of the detected field of view;

3. The "focal plane array" is only operable when installed in the camera for which it was intended; and

4. The "focal plane array" incorporates an active mechanism that forces it to be permanently inoperable when removed from the camera for which it was intended.

Imaging cameras incorporating solid-state detectors specified in 6A002.a.1.

6A004 Optical equipment and components, as follows:

Optical mirrors (reflectors) as follows:

Technical Note:

For the purpose of 6A004.a., Laser Induced Damage Threshold (LIDT) is measured according to ISO 21254-1:2011.

N.B. For optical mirrors specially designed for lithography equipment, see 3B001.

‘Deformable mirrors’ having an active optical aperture greater than 10 mm and having any of the following, and specially designed components therefor,

a. Having all the following:

1. A mechanical resonant frequency of 750 Hz or more; and

2. More than 200 actuators; or

b. A Laser Induced Damage Threshold (LIDT) being any of the following:

1. Greater than 1 kW/cm² using a "CW laser"; or

2. Greater than 2 J/cm² using 20 ns "laser" pulses at 20 Hz repetition rate;

Technical Note:

‘Deformable mirrors’ are mirrors having any of the following:

a. A single continuous optical reflecting surface which is dynamically deformed by the application of individual torques or forces to compensate for distortions in the optical waveform incident upon the mirror; or

b. Multiple optical reflecting elements that can be individually and dynamically repositioned by the application of torques or forces to compensate for distortions in the optical waveform incident upon the mirror.

‘Deformable mirrors’ are also known as adaptive optic mirrors.

Lightweight monolithic mirrors having an average "equivalent density" of less than 30 kg/m² and a total mass exceeding 10 kg;

Note: 6A004.a.2. does not control mirrors specially designed to direct solar radiation for terrestrial heliostat installations.

Lightweight "compon site" or foam mirror structures having aaverage "equivalent density" of less than 30 kg/m² and a total mass exceeding 2 kg;

Note: 6A004.a.3. does not control mirrors specially designed to direct solar radiation for terrestrial heliostat installations.

Mirrors specially designed for beam steering mirror stages specified in 6A004.d.2.a. with a flatness of λ/10 or better (λ is equal to 633 nm)and having any of the following:

a. Diameter or major axis length greater than or equal to 100 mm; or

b. Having all of the following:

1. Diameter or major axis length greater than 50 mm but less than 100 mm; and

2. A Laser Induced Damage Threshold (LIDT) being any of the following:

a. Greater than 10 kW/cm² using a "CW laser"; or

b. Greater than 20 J/cm² using 20 ns "laser" pulses at 20 Hz repetition rate;

Optical components made from zinc selenide (ZnSe) or zinc sulphide (ZnS) with transmission in the wavelength range exceeding 3 000 nm but not exceeding 25 000 nm and having any of the following:

Exceeding 100 cm³ in volume; or

Exceeding 80 mm in diameter or length of major axis and 20 mm in thickness (depth);

"Space-qualified" components for optical systems, as follows:

Components lightweighted to less than 20 % "equivalent density" compared with a solid blank of the same aperture and thickness;

Raw substrates, processed substrates having surface coatings (single-layer or multi-layer, metallic or dielectric, conducting, semiconducting or insulating) or having protective films;

Segments or assemblies of mirrors designed to be assembled in space into an optical system with a collecting aperture equivalent to or larger than a single optic 1 m in diameter;

Components manufactured from "composite" materials having a coefficient of linear thermal expansion, in any coordinate direction, equal to or less than 5 × 10⁻⁶/K;

Optical control equipment as follows:

Equipment specially designed to maintain the surface figure or orientation of the "space-qualified" components specified in 6A004.c.1. or 6A004.c.3.;

Steering, tracking, stabilisation and resonator alignment equipment as follows:

a. Beam steering mirror stages designed to carry mirrors having diameter or major axis length greater than 50 mm and having all of the following, and specially designed electronic control equipment therefor:

1. A maximum angular travel of ±26 mrad or more;

2. A mechanical resonant frequency of 500 Hz or more; and

3. An angular "accuracy" of 10 μrad (microradians) or less (better);

b. Resonator alignment equipment having bandwidths equal to or more than 100 Hz and an "accuracy" of 10 μrad or less (better);

Gimbals having all of the following:

a. A maximum slew exceeding 5^o;

b. A bandwidth of 100 Hz or more;

c. Angular pointing errors of 200 μrad (microradians) or less; and

d. Having any of the following:

1. Exceeding 0,15 m but not exceeding 1 m in diameter or major axis length and capable of angular accelerations exceeding 2 rad (radians)/s²; or

2. Exceeding 1 m in diameter or major axis length and capable of angular accelerations exceeding 0,5 rad (radians)/s²;

Not used

‘Aspheric optical elements’ having all of the following:

Largest dimension of the optical-aperture greater than 400 mm;

Surface roughness less than 1 nm (rms) for sampling lengths equal to or greater than 1 mm; and

Coefficient of linear thermal expansion's absolute magnitude less than 3 × 10⁻⁶/K at 25 °C.

Technical Notes:

1. An ‘aspheric optical element’ is any element used in an optical system whose imaging surface or surfaces are designed to depart from the shape of an ideal sphere.

2. Manufacturers are not required to measure the surface roughness listed in 6A004.e.2. unless the optical element was designed or manufactured with the intent to meet, or exceed, the control parameter.

Note 6A004.e. does not control ‘aspheric optical elements’ having any of the following:

a. Largest optical-aperture dimension less than 1 m and focal length to aperture ratio equal to or greater than 4,5:1;

b. Largest optical-aperture dimension equal to or greater than 1 m and focal length to aperture ratio equal to or greater than 7:1;

c. Designed as Fresnel, flyeye, stripe, prism or diffractive optical elements;

d. Fabricated from borosilicate glass having a coefficient of linear thermal expansion greater than 2,5 × 10^–6/K at 25 °C; or

e. An X-ray optical element having inner mirror capabilities (e.g., tube-type mirrors).

N.B. For ‘aspheric optical elements’ specially designed for lithography equipment, see 3B001.

Dynamic wavefront measuring equipment having all of the following:

‘Frame rates’ equal to or more than 1 kHz; and

A wavefront accuracy equal to or less (better) than λ/20 at the designed wavelength.

Technical Note:

For the purposes of 6A004.f., ‘frame rate’ is a frequency at which all "active pixels" in the "focal plane array" are integrated for recording images projected by the wavefront sensor optics.

6A005 "Lasers", other than those specified in 0B001.g.5. or 0B001.h.6., components and optical equipment, as follows:

N.B. SEE ALSO 6A205.

Note 1: Pulsed "lasers" include those that run in a continuous wave (CW) mode with pulses superimposed.

Note 2: Excimer, semiconductor, chemical, CO, CO₂, and ‘non-repetitive pulsed’ Nd:glass "lasers" are only specified in 6A005.d.

Technical Note:

‘Non-repetitive pulsed’ refers to "lasers" that produce either a single output pulse or that have a time interval between pulses exceeding one minute.

Note 3: 6A005 includes fibre "lasers".

Note 4: The control status of "lasers" incorporating frequency conversion (i.e., wavelength change) by means other than one "laser" pumping another "laser" is determined by applying the control parameters for both the output of the source "laser" and the frequency-converted optical output.

Note 5: 6A005 does not control "lasers" as follows:

a. Ruby with output energy below 20 J;

b. Nitrogen;

c. Krypton.

Note 6: For the purposes of 6A005.a. and 6A005.b., ‘single transverse mode’ refers to "lasers" with a beam profile having an M²-factor of less than 1,3, while ‘multiple transverse mode’ refers to "lasers" with a beam profile having an M²-factor of 1,3 or higher.

Technical Note:

In 6A005 ‘Wall-plug efficiency’ is defined as the ratio of "laser" output power (or "average output power") to total electrical input power required to operate the "laser", including the power supply/conditioning and thermal conditioning/heat exchanger.

Non-"tunable" continuous wave "(CW) lasers" having any of the following:

Output wavelength less than 150 nm and output power exceeding 1 W;

Output wavelength of 150 nm or more but not exceeding 510 nm and output power exceeding 30 W;

Note: 6A005.a.2. does not control Argon "lasers" having an output power equal to or less than 50 W.

Output wavelength exceeding 510 nm but not exceeding 540 nm and any of the following:

Note: 6A005.a.2. does not control Argon "lasers" having an output power equal to or less than 50 W.

Output wavelength exceeding 540 nm but not exceeding 800 nm and output power exceeding 30 W;

Output wavelength exceeding 800 nm but not exceeding 975 nm and any of the following:

a. ‘Single transverse mode’ output and output power exceeding 50 W; or

b. ‘Multiple transverse mode’ output and output power exceeding 80 W;

Output wavelength exceeding 975 nm but not exceeding 1 150 nm and any of the following:

a. ‘Single transverse mode’ output and any of the following:

1. Output power exceeding 1 000 W; or

2. Having all of the following:

a. Output power exceeding 500 W; and

b. Spectral bandwidth less than 40 GHz; or

b. ‘Multiple transverse mode’ output and any of the following:

1. ‘Wall-plug efficiency’ exceeding 18 % and output power exceeding 1 000 W; or

2. Output power exceeding 2 kW;

Note 1: 6A005.a.6.b. does not control ‘multiple transverse mode’, industrial "lasers" with output power exceeding 2 kW and not exceeding 6 kW with a total mass greater than 1 200 kg. For the purpose of this note, total mass includes all components required to operate the "laser", e.g., "laser", power supply, heat exchanger, but excludes external optics for beam conditioning or delivery.

Note 2: 6A005.a.6.b. does not control ‘multiple transverse mode’, industrial "lasers" having any of the following:

a. Not used;

b. Output power exceeding 1 kW but not exceeding 1,6 kW and having a BPP exceeding 1,25 mm•mrad

c. Output power exceeding 1,6 kW but not exceeding 2,5 kW and having a BPP exceeding 1,7 mm•mrad;

d. Output power exceeding 2,5 kW but not exceeding 3,3 kW and having a BPP exceeding 2,5 mm•mrad;

e. Output power exceeding 3,3 kW but not exceeding 6 kW and having a BPP exceeding 3,5 mm•mrad;

f. Not used;

g. Not used;

h. Output power exceeding 6 kW but not exceeding 8 kW and having a BPP exceeding 12 mm•mrad; or

i. Output power exceeding 8 kW but not exceeding 10 kW and having a BPP exceeding 24 mm•mrad.

Output wavelength exceeding 1 150 nm but not exceeding 1 555 nm and any of the following:

a. ‘Single transverse mode’ and output power exceeding 50 W; or

b. ‘Multiple transverse mode’ and output power exceeding 80 W;

Output wavelength exceeding 1 555 nm but not exceeding 1 850 nm and output power exceeding 1 W;

Output wavelength exceeding 1 850 nm but not exceeding 2 100 nm, and any of the following:

a. ‘Single transverse mode’ and output power exceeding 1 W; or

b. ‘Multiple transverse mode’ output and output power exceeding 120 W; or

10.

Output wavelength exceeding 2 100 nm and output power exceeding 1 W;

Non-"tunable" "pulsed lasers" having any of the following:

Output wavelength less than 150 nm and any of the following:

a. Output energy exceeding 50 mJ per pulse and "peak power" exceeding 1 W; or

b. "Average output power" exceeding 1 W;

Output wavelength of 150 nm or more but not exceeding 510 nm and any of the following:

a. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 30 W; or

b. "Average output power" exceeding 30 W;

Note: 6A005.b.2.b. does not control Argon "lasers" having an "average output power" equal to or less than 50 W.

Output wavelength exceeding 510 nm but not exceeding 540 nm and any of the following:

a. ‘Single transverse mode’ output and any of the following:

1. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 50 W; or

2. "Average output power" exceeding 50 W; or

b. ‘Multiple transverse mode’ output and any of the following:

1. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 150 W; or

2. "Average output power" exceeding 150 W;

Output wavelength exceeding 540 nm but not exceeding 800 nm and any of the following:

a. "Pulse duration" less than 1 ps and any of the following:

1. Output energy exceeding 0,005 J per pulse and "peak power" exceeding 5 GW; or

2. "Average output power" exceeding 20 W; or

b. "Pulse duration" equal to or exceeding 1 ps and any of the following:

1. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 30 W; or

2. "Average output power" exceeding 30 W;

Output wavelength exceeding 800 nm but not exceeding 975 nm and any of the following:

a. "Pulse duration" less than 1 ps and any of the following:

1. Output energy exceeding 0,005 J per pulse and "peak power" exceeding 5 GW; or

2. ‘Single transverse mode’ output and "average output power" exceeding 20 W;

b. "Pulse duration" equal to or exceeding 1 ps and not exceeding 1 μs and any of the following:

1. Output energy exceeding 0,5 J per pulse and "peak power" exceeding 50 W;

2. ‘Single transverse mode’ output and "average output power" exceeding 20 W; or

3. ‘Multiple transverse mode’ output and "average output power" exceeding 50 W; or

c. "Pulse duration" exceeding 1 μs and any of the following:

1. Output energy exceeding 2 J per pulse and "peak power" exceeding 50 W;

2. ‘Single transverse mode’ output and "average output power" exceeding 50 W; or

3. ‘Multiple transverse mode’ output and "average output power" exceeding 80 W;

Output wavelength exceeding 975 nm but not exceeding 1 150 nm and any of the following:

a. "Pulse duration" of less than 1 ps, and any of the following:

1. Output "peak power" exceeding 2 GW per pulse;

2. "Average output power" exceeding 30 W; or

3. Output energy exceeding 0,002 J per pulse;

b. "Pulse duration" equal to or exceeding 1 ps and less than 1 ns and any of the following:

1. Output "peak power" exceeding 5 GW per pulse;

2. "Average output power" exceeding 50 W; or

3. Output energy exceeding 0,1 J per pulse;

c. "Pulse duration" equal to or exceeding 1 ns but not exceeding 1 μs, and any of the following:

1. ‘Single transverse mode’ output and any of the following:

a. "Peak power" exceeding 100 MW;

b. "Average output power" exceeding 20 W limited by design to a maximum pulse repetition frequency less than or equal to 1 kHz;

c. ‘Wall-plug efficiency’ exceeding 12 %, "average output power" exceeding 100 W and capable of operating at a pulse repetition frequency greater than 1 kHz;

d. "Average output power" exceeding 150 W and capable of operating at a pulse repetition frequency greater than 1 kHz; or

e. Output energy exceeding 2 J per pulse; or

2. ‘Multiple transverse mode’ output and any of the following:

a. "Peak power" exceeding 400 MW;

b. ‘Wall-plug efficiency’ exceeding 18 % and "average output power" exceeding 500 W;

c. "Average output power" exceeding 2 kW; or

d. Output energy exceeding 4 J per pulse; or

d. "Pulse duration" exceeding 1 μs and any of the following:

1. ‘Single transverse mode’ output and any of the following:

a. "Peak power" exceeding 500 kW;

b. ‘Wall-plug efficiency’ exceeding 12 % and "average output power" exceeding 100 W; or

c. "Average output power" exceeding 150 W; or

2. ‘Multiple transverse mode’ output and any of the following:

a. "Peak power" exceeding 1 MW;

b. ‘Wall-plug efficiency’ exceeding 18 % and "average output power" exceeding 500 W; or

c. "Average output power" exceeding 2 kW;

Output wavelength exceeding 1 150 nm but not exceeding 1 555 nm, and any of the following:

a. "Pulse duration" not exceeding 1 μs and any of the following:

1. Output energy exceeding 0,5 J per pulse and "peak power" exceeding 50 W;

2. ‘Single transverse mode’ output and "average output power" exceeding 20 W; or

3. ‘Multiple transverse mode’ output and "average output power" exceeding 50 W; or

b. "Pulse duration" exceeding 1 μs and any of the following:

1. Output energy exceeding 2 J per pulse and "peak power" exceeding 50 W;

2. ‘Single transverse mode’ output and "average output power" exceeding 50 W; or

3. ‘Multiple transverse mode’ output and "average output power" exceeding 80 W;

Output wavelength exceeding 1 555 nm but not exceeding 1 850 nm, and any of the following:

a. Output energy exceeding 100 mJ per pulse and "peak power" exceeding 1 W; or

b. "Average output power" exceeding 1 W;

Output wavelength exceeding 1 850 nm but not exceeding 2 100 nm, and any of the following:

a. ‘Single transverse mode’ and any of the following:

1. Output energy exceeding 100 mJ per pulse and "peak power" exceeding 1 W; or

2. "Average output power" exceeding 1 W; or

b. ‘Multiple transverse mode’ and any of the following:

1. Output energy exceeding 100 mJ per pulse and "peak power" exceeding 10 kW; or

2. "Average output power" exceeding 120 W; or

10.

Output wavelength exceeding 2 100 nm and any of the following:

a. Output energy exceeding 100 mJ per pulse and "peak power" exceeding 1 W; or

b. "Average output power" exceeding 1 W;

"Tunable" "lasers" having any of the following:

Output wavelength less than 600 nm and any of the following:

a. Output energy exceeding 50 mJ per pulse and "peak power" exceeding 1 W; or

b. Average or CW output power exceeding 1 W;

Note: 6A005.c.1. does not control dye "lasers" or other liquid "lasers", having a multimode output and a wavelength of 150 nm or more but not exceeding 600 nm and all of the following:

1. Output energy less than 1,5 J per pulse or a "peak power" less than 20 W; and

2. Average or CW output power less than 20 W.

Output wavelength of 600 nm or more but not exceeding 1 400 nm, and any of the following:

a. Output energy exceeding 1 J per pulse and "peak power" exceeding 20 W; or

b. Average or CW output power exceeding 20 W; or